Breaking Through UPA2790GR-E1-AT and Surpassing: How Domestic Dual MOSFETs Achieve High-Performance Substitution
Introduction
Dual N+P channel MOSFETs provide compact and efficient switching solutions for modern power management circuits. For years, international brands like Renesas have set benchmarks with components such as the UPA2790GR-E1-AT. However, supply chain uncertainties and the pursuit of technological independence have made finding reliable, high-performance domestic alternatives a strategic priority. Represented by VBsemi’s VBA5325, domestic components are now achieving direct competition and even surpassing international classics.
Part 1: Analysis of the Classic Component
Renesas’ UPA2790GR-E1-AT is a dual MOSFET integrating one N-channel and one P-channel in a single SOP8 package. With a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 6A per channel, it offers a balanced performance for low-voltage applications. Its on-resistance (RDS(on)) is typically 60mΩ (@10V, 3A), making it suitable for power switching, load switching, and motor drive circuits in portable devices and embedded systems.
Part 2: Performance Surpassing by the Domestic Challenger
VBsemi’s VBA5325 directly competes with the UPA2790GR-E1-AT and demonstrates enhancements in key parameters:
Higher Current Capability: Continuous drain current reaches ±8A (an increase of 2A per channel), enabling greater power handling and design margin.
Lower Conduction Loss: Typical RDS(on) is 40mΩ at VGS=10V and 18mΩ at VGS=4.5V, significantly reducing conduction losses and improving overall efficiency.
Robust Voltage Ratings: Maintains VDS of ±30V and VGS of ±20V, ensuring compatibility and reliability in similar application environments.
Advanced Technology: Utilizes Trench technology for improved switching performance and thermal stability.
Full Compatibility: Offered in a pin-to-pin compatible SOP8 package, allowing for direct replacement without board redesign.
Part 3: Core Value Beyond Specifications
Selecting a domestic alternative like the VBA5325 delivers deeper strategic benefits:
Ensuring Supply Chain Resilience: Reduces dependency on single-source international suppliers, mitigating risks and ensuring production continuity.
Cost Optimization: Provides competitive pricing with equal or superior performance, potentially lowering overall system cost and enabling design optimizations.
Access to Localized Support: Domestic suppliers offer faster technical response, application-specific guidance, and collaborative development opportunities.
Strengthening the Industrial Ecosystem: Each successful adoption contributes to the growth and technological advancement of the domestic semiconductor industry.
Part 4: A Robust Path for Substitution Implementation
To ensure a smooth transition, the following steps are recommended:
Detailed Parameter Comparison: Verify all electrical characteristics, including threshold voltage (Vth), switching parameters, and safe operating area.
Comprehensive Laboratory Testing: Perform static and dynamic tests, efficiency measurements, thermal evaluations, and reliability validations under real operating conditions.
Pilot Batch Verification: Implement the component in actual products for field testing and long-term performance monitoring.
Develop a Transition Plan: Gradually roll out the substitution after successful validation, while maintaining the original design as a short-term backup option.
Conclusion: Moving from "Compatible" to "Superior"
The progression from the UPA2790GR-E1-AT to the VBA5325 illustrates that domestic power MOSFETs are now capable of competing with and outperforming established international counterparts in key metrics. Adopting such high-performance domestic components is not only a practical response to current global supply challenges but also a strategic step toward building a self-reliant, innovative, and resilient industrial future. Now is the time to actively evaluate and integrate high-quality domestic solutions like the VBA5325.