Introduction
Power MOSFETs serve as critical switches managing energy flow in modern electronics. For years, international brands like onsemi have set industry standards with components such as the ATP113-TL-H. However, supply chain uncertainties and the push for technological self-reliance have made finding reliable, high-performance domestic alternatives a strategic priority. Represented by VBsemi’s VBE2625, domestic parts are now achieving direct competition and outperforming international classics.
Part 1: Analysis of the Classic Component
onsemi’s ATP113-TL-H is a P-channel MOSFET with a drain-source voltage of -60V and a continuous drain current of -35A. It features an on-resistance of 29.5mΩ at 10V and 18A, utilizing a single ATPAK package. This device is designed for general-purpose switching applications, offering balanced performance in areas like power management and motor control, making it a common choice for various designs.
Part 2: Performance Surpassing by the Domestic Challenger
VBsemi’s VBE2625 directly competes with the ATP113-TL-H and shows superior key parameters:
Higher Current Capacity: Continuous drain current reaches -50A (an increase of 15A), enabling greater power handling and reliability in demanding applications.
Lower Conduction Loss: Typical on-resistance is 20mΩ at 10V, significantly reducing conduction losses and improving system efficiency compared to the 29.5mΩ of the ATP113-TL-H.
Enhanced Compatibility: Uses a TO252 package that is pin-compatible and suitable for direct replacement without PCB redesign.
Advanced Technology: Built on a Trench process, ensuring robust performance and stability under various operating conditions.
Part 3: Core Value Beyond Specifications
Opting for a domestic alternative like the VBE2625 delivers deeper benefits:
Securing Supply Chains: Reduces dependency on global suppliers, ensuring stable availability and production continuity.
Cost Optimization: Offers competitive pricing with better performance, potentially lowering overall system costs and simplifying thermal management.
Accessing Local Support: Domestic providers enable faster technical assistance and customization tailored to specific application needs.
Strengthening Industrial Ecosystems: Each successful adoption supports the growth and innovation of the domestic semiconductor industry.
Part 4: A Robust Path for Substitution Implementation
To ensure a smooth transition, follow these steps:
Detailed Specification Review: Compare all electrical parameters and characteristic curves between the ATP113-TL-H and VBE2625.
Comprehensive Laboratory Testing: Perform static and dynamic tests, efficiency measurements, and reliability assessments under real-world conditions.
Pilot Batch Validation: Test the component in actual products to monitor long-term performance and compatibility.
Develop a Switchover Plan: Gradually implement the substitution after verification, while keeping the original design as a temporary backup.
Conclusion: Moving from "Usable" to "Excellent"
The shift from the ATP113-TL-H to the VBE2625 illustrates that domestic power MOSFETs can not only match but exceed international benchmarks in key areas. Embracing such high-performance domestic solutions is a practical response to supply chain challenges and a strategic step toward building an autonomous, resilient, and innovative industrial future. Now is the ideal time to evaluate and integrate quality domestic components like the VBE2625.