In high-power, high-efficiency application scenarios such as switch-mode and resonant-mode power supplies, DC-DC converters, industrial motor drives, and renewable energy systems, Littelfuse IXYS' IXTH34N65X2, with its low on-resistance, avalanche rating, low package inductance, and high power density, has been a preferred choice for engineers globally. However, in the post-pandemic era marked by global supply chain disruptions and trade uncertainties, this imported component faces challenges like extended lead times (often 4-8 weeks), cost volatility due to exchange rates, and delayed technical support. These issues hinder production schedules and cost optimization for downstream enterprises, making domestic substitution not just an option but a necessity to ensure supply chain security, reduce costs, and enhance competitiveness.
Leveraging years of expertise in power semiconductors, VBsemi introduces the VBP165R36S N-channel power MOSFET, developed through independent R&D. This product is precisely tailored as a direct alternative to the IXTH34N65X2, offering superior parameter upgrades, technological parity, and full package compatibility. It enables seamless replacement without circuit modifications, delivering a more stable, cost-effective, and locally supported solution for high-power electronic systems.
Comprehensive Parameter Surpassing, Enhanced Performance for Demanding Conditions.
Designed as a domestic drop-in replacement for the IXTH34N65X2, the VBP165R36S achieves significant improvements in key electrical parameters, providing robust performance for high-power applications:
First, the drain-source voltage remains at 650V, matching the original model, ensuring reliability in high-voltage environments with transient overvoltage risks.
Second, the continuous drain current is increased to 36A, outperforming the original model's 34A—a 5.9% enhancement. This boosts current-carrying capability for higher-power designs, improving system stability and enabling upgrades.
Third, the on-state resistance is reduced to 75mΩ (@10V gate drive), significantly lower than the IXTH34N65X2's 96mΩ—a 21.9% reduction. This minimizes conduction losses, enhances overall efficiency, and reduces heat generation in high-frequency switching applications, easing thermal management.
Additionally, the VBP165R36S supports a ±30V gate-source voltage, offering superior gate ESD and noise immunity to prevent unintended turn-on in complex electromagnetic environments. The 3.5V gate threshold voltage ensures compatibility with mainstream driver ICs, requiring no drive circuit adjustments and lowering substitution barriers.
Advanced SJ_Multi-EPI Technology, Reliability and Stability Upgraded.
The IXTH34N65X2's strengths lie in its low RDS(on), avalanche capability, and high power density. The VBP165R36S employs advanced SJ_Multi-EPI (Super Junction Multi-Epitaxial) technology, building on the original's performance while enhancing reliability. The device undergoes rigorous avalanche testing and high-voltage screening, excelling in single-pulse avalanche energy handling to withstand surges during high-voltage turn-off, reducing failure risks. Optimized intrinsic capacitance design lowers switching losses and improves dv/dt tolerance, ensuring stable operation in high-frequency switching and fast transient conditions. With an operating temperature range of -55°C to 150°C, it adapts to harsh industrial and outdoor environments. Having passed 1000-hour high-temperature/high-humidity (85°C/85% RH) aging tests and long-term reliability verification, its failure rate is below industry averages, ideal for critical applications like industrial control, renewable energy, and medical equipment.
Fully Compatible Package, Enabling "Plug-and-Play" Replacement.
A core concern in domestic substitution is the cost and effort of redesign. The VBP165R36S addresses this through its package design. It uses a TO-247 package, identical to the IXTH34N65X2 in pinout, pin spacing, dimensions, and heatsink structure. Engineers can replace it directly without PCB layout changes or thermal system adjustments, achieving "plug-and-play" convenience. This compatibility slashes verification time—sample validation typically completes in 1-2 days—and avoids costs from PCB revisions or mold changes. It also preserves original product certifications and外观 designs, accelerating supply chain cycles and helping enterprises swiftly upgrade imported components.
Local Strength Assurance, Dual Peace of Mind for Supply Chain and Support.
Unlike imported components plagued by supply chain instability, VBsemi leverages China's robust semiconductor ecosystem, with modern production bases in Jiangsu and Guangdong enabling full-process R&D and stable mass production. The VBP165R36S boasts a standard lead time under 2 weeks, with emergency orders supporting 72-hour delivery, mitigating risks from global logistics, tariffs, or geopolitics. As a local brand, VBsemi provides dedicated technical support: comprehensive documentation (including substitution reports, datasheets, thermal guides, and application circuits), tailored selection advice, and circuit optimization. Technical issues receive 24-hour rapid responses, either on-site or remote, eliminating the slow support and high communication costs of imported brands.
From switch-mode and resonant power supplies to DC-DC converters, motor drives, and renewable energy systems, the VBP165R36S—with its "superior parameters, enhanced reliability, package compatibility, controllable supply, and responsive service"—is the ideal domestic alternative to the IXTH34N65X2. It has gained adoption in leading companies across industries, earning market acclaim. Choosing the VBP165R36S is more than a component swap; it's a strategic move to secure supply chains, optimize costs, and boost product competitiveness, offering better performance, stable supply, and seamless support without R&D risks.