Introduction
Power MOSFETs serve as essential "switches" for energy control in modern electronics. For years, international brands like RENESAS have led the market with established components such as the 2SK3365-Z-AZ. However, global supply chain disruptions and the pursuit of technological self-reliance have made finding reliable, high-performance domestic alternatives a strategic priority. Represented by VBsemi's VBE1310, domestic solutions are now achieving direct对标and even surpassing international benchmarks.
Part 1: Analysis of the Classic Component
RENESAS's 2SK3365-Z-AZ is a low-voltage MOSFET with a drain-source voltage of 30V, continuous drain current of 30A, and on-resistance of 14mΩ at 10V. It offers a power dissipation of 36W and is commonly used in applications requiring efficient power management, such as DC-DC converters, motor drives, and automotive systems. Its balance of performance and reliability has made it a go-to choice for many designs.
Part 2: Performance Surpassing by the Domestic Challenger
VBsemi's VBE1310 directly对标s the 2SK3365-Z-AZ and demonstrates superior key parameters:
Higher Current Capacity: Continuous drain current reaches 70A (more than double the 30A of the 2SK3365-Z-AZ), enabling handling of higher power loads.
Lower Conduction Loss: On-resistance is reduced to 7mΩ at 10V (half of the 14mΩ), significantly cutting conduction losses and improving system efficiency.
Enhanced Voltage Tolerance: Gate-source voltage (VGS) supports ±20V, providing robust gate protection and flexibility in drive circuits.
Full Compatibility: Utilizes a TO252 package with Single-N configuration, ensuring pin-to-pin replacement without PCB redesign.
The device leverages advanced Trench technology, ensuring stable and reliable performance in demanding environments.
Part 3: Core Value Beyond Specifications
Opting for a domestic alternative like the VBE1310 delivers deeper advantages:
Securing Supply Chains: Reduces reliance on international suppliers, mitigating risks and ensuring stable production.
Cost Optimization: Offers competitive pricing with enhanced performance, potentially lowering overall system costs through simplified thermal management or peripheral designs.
Accessing Local Support: Domestic providers like VBsemi enable faster technical assistance, customization, and collaborative development tailored to specific needs.
Strengthening the Industrial Ecosystem: Each successful substitution fuels the growth of domestic semiconductor capabilities, fostering innovation and a sustainable development cycle.
Part 4: A Robust Path for Substitution Implementation
To ensure a smooth transition, follow these steps:
Detailed Specification Review: Compare all electrical parameters, including VDS, ID, RDS(on), and thermal characteristics.
Comprehensive Laboratory Testing: Perform static and dynamic tests, efficiency measurements, and reliability assessments under real-world conditions.
Pilot Batch Validation: Test the VBE1310 in actual applications, monitoring long-term performance and compatibility.
Develop a Switchover Strategy: Implement the substitution gradually after verification, while keeping the original design as a backup for continuity.
Conclusion: Moving from "Usable" to "Excellent"
The shift from the RENESAS 2SK3365-Z-AZ to the VBE1310 underscores that domestic power MOSFETs have evolved to not only match but exceed international standards in key areas. Adopting such high-performance domestic components is a practical response to supply chain challenges and a strategic step toward building an autonomous, resilient, and innovative industrial future. Now is the time to actively evaluate and integrate quality domestic solutions like the VBE1310.