Driven by the demands for device miniaturization, higher efficiency, and supply chain diversification, the domestic substitution of core power semiconductors has become a strategic focus. In the realm of compact, high-efficiency power management for portable devices and IoT modules, finding a domestic alternative that offers robust performance, reliable quality, and stable supply is crucial. Focusing on the well-regarded 60V dual N-channel MOSFET from DIODES—the DMG1026UV-7—the VBTA3615M from VBsemi emerges as a powerful contender. It achieves precise parametric alignment and leverages advanced Trench technology to realize a leap in switching performance, representing a value evolution from "compatible" to "competitive," and from "substitution" to "system-level enhancement."
I. Parameter Comparison and Performance Leap: Foundational Advantages Enabled by Trench Technology
The DMG1026UV-7 has earned its place in efficient power management applications due to its 60V drain-source voltage, dual N-channel configuration, 440mA continuous current, and low on-resistance (RDS(on)). However, as designs push for faster switching and lower losses, optimizing dynamic performance becomes key.
1. Building on hardware compatibility with the same 60V VDS and a compact SC75-6 package, the VBTA3615M achieves critical enhancements through advanced Trench technology:
Precise On-Resistance Match: With VGS = 10V, the RDS(on) is specified at 1200mΩ, directly matching the reference model's performance, ensuring minimal conduction loss in load switching applications.
2. Optimized Switching and Drive Characteristics: The Trench technology contributes to favorable gate charge characteristics. Combined with a standard gate threshold voltage (Vth) of 1.7V, the device ensures crisp switching and excellent compatibility with low-voltage drive ICs, leading to reduced switching losses and improved overall system efficiency.
3. Integrated Dual-N Design: The monolithic dual N-channel configuration in an ultra-compact SC75-6 package saves valuable PCB space, simplifies layout, and is ideal for space-constrained applications requiring multiple switching elements.
II. Deepening Application Scenarios: From Functional Replacement to System Optimization
The VBTA3615M enables a drop-in replacement in existing DMG1026UV-7 designs while offering potential for system-level improvements:
1. Load Switching & Power Path Management
In battery-powered devices, its low RDS(on) minimizes voltage drop and power loss. The optimized switching performance allows for faster turn-on/off, improving response time in power sequencing and distribution.
2. Battery Protection Circuits & Portable Device Power Management
Suitable for protection modules in power banks, BMS auxiliary circuits, and smartphone power management. The 60V rating offers sufficient margin for safety, and the dual-channel design provides integration benefits.
3. Motor Drive for Small Actuators & Pumps
Ideal for driving small DC motors in consumer electronics, automotive subsystems, or IoT devices. The efficient switching helps reduce heat generation in compact enclosures.
4. USB Port Power Distribution & Protection
Excellent for managing power delivery and implementing over-current protection in multi-port USB chargers and hubs, thanks to its voltage rating and dual-channel functionality.
III. Beyond Parameters: Reliability, Supply Chain Security, and Full-Lifecycle Value
Choosing the VBTA3615M is a decision that balances technical merit with strategic supply chain and commercial benefits:
1. Domestic Supply Chain Security
VBsemi maintains controlled capabilities across design, fabrication, and packaging, ensuring a stable, predictable supply. This mitigates risks associated with geopolitical trade fluctuations and safeguards production continuity for OEMs and ODMs.
2. Comprehensive Cost Advantage
Offering performance parity or better, domestic components like the VBTA3615M provide a more competitive cost structure and greater flexibility for customization, helping to reduce overall BOM cost and enhance end-product competitiveness.
3. Localized Technical Support
VBsemi provides rapid, end-to-end support—from component selection and circuit simulation to testing and failure analysis. This accelerates design cycles and problem resolution, offering a significant advantage over distant international suppliers.
IV. Adaptation Recommendations and Replacement Path
For designs currently using or specifying the DMG1026UV-7, the following evaluation and migration steps are recommended:
1. Electrical Performance Verification
Compare key switching waveforms (rise/fall times, switching losses) under actual circuit conditions. The VBTA3615M's Trench technology may allow for efficiency gains, especially in high-frequency switching scenarios.
2. PCB Layout and Thermal Validation
The pin-compatible SC75-6 package allows for a direct footprint replacement. Due to its efficient performance, thermal stress is expected to be comparable or lower, but a verification under maximum load conditions is advised.
3. System-Level Validation and Reliability Testing
Conduct standard electrical, thermal, and environmental stress tests in the lab before proceeding to full application-level validation to ensure long-term reliability and stability.
Advancing Towards Autonomous, High-Efficiency Power Management
The VBsemi VBTA3615M is more than just a domestic alternative to an international dual MOSFET; it is a high-performance, highly integrated solution for next-generation compact power management systems. Its balanced characteristics in on-resistance, switching capability, and dual-channel integration empower customers to achieve improvements in efficiency, power density, and design simplicity.
In an era prioritizing efficiency and supply chain resilience, choosing the VBTA3615M is both a rational choice for technical upgrade and a strategic move towards supply chain autonomy. We confidently recommend this product and look forward to collaborating to drive innovation in power management electronics.