Driven by the growing demand for robust and cost-effective power switching in industrial applications, the shift towards domestic core power devices has become a strategic priority. In fields requiring reliable performance under medium-voltage and medium-current conditions, finding a local alternative that matches or surpasses international specifications in quality, performance, and supply stability is a key task for designers and manufacturers. Focusing on Renesas’s 2SK3116(1)-ZK-E2-AZ—a 600V N-channel MOSFET widely used in various power circuits—the VBL165R08 from VBsemi stands out as a powerful substitute. It not only achieves full parameter compatibility but also delivers noticeable improvements in key characteristics, enabling a transition from “direct replacement” to “performance enhancement.”
I. Parameter Comparison and Performance Enhancement: Advantages of Advanced Planar Technology
The 2SK3116(1)-ZK-E2-AZ has been valued in applications such as switching power supplies, motor drives, and lighting circuits for its 600V voltage rating, 7.5A continuous drain current, and 1.2Ω on-state resistance. However, as efficiency and power density requirements increase, its conduction loss and thermal performance can become limiting factors.
1. Building on hardware compatibility with a higher 650V drain-source voltage and the same TO-263 package, the VBL165R08 achieves meaningful improvements in electrical parameters through optimized planar MOSFET technology:
Reduced On-Resistance: With VGS = 10V, the RDS(on) is as low as 1000 mΩ (1.0Ω), approximately 17% lower than the reference model. According to the conduction loss formula Pcond = I_D^2 · RDS(on), this reduction lowers power dissipation under typical operating currents, improving efficiency and reducing thermal stress.
2. Enhanced Current Rating: The continuous drain current ID is rated at 8A, offering a margin over the 7.5A of the Renesas part, supporting more robust operation in steady-state conditions.
3. Balanced Switching Performance: With a standard Vth of 3.5V and VGS rating of ±30V, the device ensures reliable gate drive compatibility and good switching behavior, suitable for various controller platforms.
II. Application Scenarios: From Functional Replacement to System Improvement
The VBL165R08 enables drop-in replacement in existing designs using the 2SK3116(1)-ZK-E2-AZ, while its parameter advantages can contribute to system-level upgrades:
1. Industrial Switching Power Supplies (SMPS)
Lower conduction loss helps improve efficiency across load ranges, especially in continuous operation, supporting higher power density and better thermal management.
2. Motor Drive & Inverter Circuits
Suitable for auxiliary motors, fans, pumps, and low-power inverter stages, the improved current capability and voltage rating enhance reliability in 600V-class systems.
3. LED Lighting & Ballast Circuits
The 650V rating offers additional margin in off-line lighting applications, improving surge immunity and long-term reliability.
4. Power Factor Correction (PFC) & DC-DC Stages
Can be used in boost PFC or isolated converter secondary-side circuits where 600–650V MOSFETs are required, contributing to overall system efficiency.
III. Beyond Specifications: Reliability, Supply Assurance, and Total Cost Benefits
Choosing the VBL165R08 is both a technical and a strategic decision:
1. Secure Domestic Supply Chain
VBsemi controls the full process from chip design to packaging and testing, ensuring stable supply, shorter lead times, and resilience against global component shortages or trade uncertainties.
2. Cost-Effective Performance
With better or comparable electrical parameters, the VBL165R08 offers a competitive price structure, helping reduce BOM costs without sacrificing performance.
3. Local Technical Support
Provides end-to-end assistance from selection, simulation, and testing to failure analysis, accelerating design cycles and problem resolution.
IV. Replacement Guidance and Validation Steps
For designs currently using or planning to use the 2SK3116(1)-ZK-E2-AZ, the following steps are recommended:
1. Electrical Performance Verification
Compare switching waveforms, losses, and temperature rise under actual operating conditions. The lower RDS(on) of the VBL165R08 may allow for efficiency improvements or slight derating in thermal design.
2. Thermal and Mechanical Validation
Due to reduced conduction loss, thermal performance may be improved. Evaluate potential heat sink optimization or layout adjustments.
3. Reliability and System Testing
Perform standard electrical, thermal, environmental, and lifetime tests in the lab before moving to field validation to ensure long-term stability.
Driving Forward with Domestic, High-Reliability Power Solutions
The VBsemi VBL165R08 is not just a pin-to-pin alternative to the Renesas 2SK3116(1)-ZK-E2-AZ—it is an enhanced, reliable power MOSFET solution for industrial and medium-power applications. Its advantages in voltage rating, current capability, and reduced on-resistance can help customers achieve better efficiency, higher reliability, and improved supply chain security.
In an era where industrial autonomy and component localization are increasingly critical, selecting the VBL165R08 represents both a smart technical upgrade and a strategic step toward supply chain independence. We confidently recommend this product and look forward to partnering with you to advance the next generation of power electronics solutions.