In a wide range of high-current, low-voltage application scenarios such as motor drives, DC-DC converters, synchronous rectification, power tools, and battery management systems, Nexperia's PSMN8R5-108ES, with its outstanding low on-resistance, high current capability, and efficient LFPAK56 (TO262) packaging, has been a preferred component for engineers in power design. However, in the face of persistent global semiconductor supply chain tensions and fluctuating international trade dynamics, this imported MOSFET reveals significant challenges: extended and unpredictable lead times, procurement costs vulnerable to currency and tariff changes, and limited access to timely technical support. These factors increasingly hinder manufacturers' ability to maintain production agility and cost-effectiveness. In this context, domestic substitution has evolved from a strategic consideration to an operational imperative, representing a crucial step for enterprises to secure their supply chains, reduce dependency, and enhance overall competitiveness.
Leveraging its profound expertise in power semiconductor development, VBsemi introduces the VBN1105 N-channel MOSFET, a product of independent innovation designed as a precise counterpart to the PSMN8R5-108ES. This solution offers the core advantages of parameter equivalence, advanced technology, and full package compatibility. It serves as a direct, drop-in replacement requiring no circuit modifications, delivering a more reliable, cost-effective, and locally supported high-performance solution for demanding power systems.
Precise Parameter Matching with Enhanced Robustness for Demanding Conditions.
Engineered as a domestic alternative to the PSMN8R5-108ES, the VBN1105 provides excellent parameter alignment with key enhancements, ensuring robust performance in high-current applications:
Its drain-source voltage is rated at 100V, sufficiently covering the majority of application fields of the original 108V-rated part, while its continuous drain current matches the original at a high 100A. This ensures seamless handling of high-load conditions in motor drives and power conversion.
The on-state resistance is a low 9mΩ (at 10V gate drive), offering performance on par with the original model's 8.5mΩ. This minimal RDS(on) directly translates to reduced conduction losses, higher system efficiency, and lower thermal dissipation, which is critical for compact and energy-sensitive designs.
Furthermore, the VBN1105 supports a ±20V gate-source voltage, providing solid gate oxide protection and noise immunity. The 2.5V typical gate threshold voltage ensures easy drive compatibility with mainstream controller ICs, facilitating straightforward integration without necessitating drive circuit adjustments, thereby simplifying the substitution process.
Advanced Trench Technology Delivering High Efficiency and Reliability.
The PSMN8R5-108ES is renowned for its low-loss performance. The VBN1105 utilizes advanced Trench gate technology, achieving a superior balance between low on-resistance and gate charge. This optimization results in faster switching speeds and lower switching losses, making it exceptionally suitable for high-frequency applications like DC-DC converters and synchronous rectifiers. The device's intrinsic design ensures excellent dv/dt capability and avalanche ruggedness, having undergone rigorous pre-screening and reliability testing, including 100% avalanche energy testing. It demonstrates stable operation under stressful conditions such as inductive load switching and transient surges. With an operational junction temperature range extending up to 150°C and validation through extensive high-temperature and high-humidity reliability tests, the VBN1105 guarantees long-term stability and durability, making it a dependable choice for industrial, automotive, and consumer applications where reliability is paramount.
Fully Compatible Package Enabling Seamless, Risk-Free Replacement.
A primary concern in component substitution is the engineering effort required for integration. The VBN1105 eliminates this hurdle through its package design. The device is housed in a TO-262 package, which is mechanically and electrically identical to the LFPAK56 (TO262) package used by the PSMN8R5-108ES in terms of footprint, pinout, and mounting dimensions. This complete compatibility allows for a true "drop-in" replacement without any alterations to the existing PCB layout or thermal management system. The benefits are immediate: it drastically cuts down the time and cost associated with validation and re-qualification, typically allowing sample verification within days. It avoids additional expenses from board re-spins, tooling changes, or structural redesigns, enabling manufacturers to swiftly transition to a secure supply source with minimal disruption.
Localized Strength Guaranteeing Supply Chain Stability and Proactive Support.
Contrasting with the vulnerabilities of an international supply chain, VBsemi leverages its established domestic manufacturing and R&D infrastructure within China's robust semiconductor ecosystem. This ensures stable, large-scale production of the VBN1105. Standard lead times are significantly shortened, with reliable delivery schedules and options for expedited support, effectively insulating customers from global logistics delays, geopolitical uncertainties, and tariff fluctuations.
As a local provider, VBsemi adds significant value through dedicated technical support. Customers benefit from direct access to a responsive engineering team that offers comprehensive documentation—including detailed substitution guides, datasheets, and application notes—alongside personalized circuit analysis and optimization recommendations. Technical queries are addressed promptly, often within 24 hours, overcoming the slow response times typically associated with overseas suppliers. This hands-on support model ensures a smooth, confident, and efficient substitution journey.
From motor drives and high-efficiency DC-DC power supplies to battery protection circuits and power tools; from industrial automation to emerging energy storage systems, the VBN1105 stands out as the preferred domestic alternative to the PSMN8R5-108ES. Its compelling advantages of "performance parity, proven reliability, seamless compatibility, secure supply, and responsive local support" have led to its successful adoption by numerous leading manufacturers across various sectors. Choosing the VBN1105 is more than a component swap; it is a strategic move toward supply chain resilience, cost optimization, and enhanced product viability—enabling access to equivalent performance without the risks of redesign, while gaining the benefits of a stable supply and readily available technical expertise.