In medium-voltage, high-current application scenarios such as motor drives, power tools, synchronous rectification in DC-DC converters, and high-density power supplies, TOSHIBA's TPH3R70APL1,LQ, with its U-MOS IX process, low on-resistance, and high current capability, has been a key component for engineers. However, in the face of global supply chain uncertainties, extended lead times, and cost pressures, the need for a reliable, high-performance domestic alternative has become increasingly urgent. Addressing this critical industry demand, VBsemi introduces the VBGQA1103 N-channel power MOSFET. This product is meticulously designed as a direct substitute for the TPH3R70APL1,LQ, offering superior parameters, advanced technology, and full package compatibility, providing a more efficient, stable, and locally supported solution for demanding power management systems.
Superior Electrical Parameters, Delivering Higher Power Density and Efficiency.
Tailored as a domestic drop-in replacement for the TPH3R70APL1,LQ, the VBGQA1103 demonstrates significant enhancements in key performance metrics, ensuring robust operation and future-proofing designs:
The drain-source voltage is rated at 100V, fully matching the original part and ensuring reliable operation in standard 48V-96V systems. The continuous drain current is elevated to 180A, a notable improvement over the original 170A, providing a 5.9% increase in current-handling capacity. This allows for higher power throughput or increased design margin in existing applications.
Most critically, the on-state resistance is reduced to an exceptionally low 3.45mΩ (typical @10V VGS), surpassing the TPH3R70APL1,LQ's 3.7mΩ. This reduction in RDS(on) directly translates to lower conduction losses, significantly improving system efficiency and reducing heat generation. The lower thermal load simplifies thermal management and enhances long-term reliability. The device supports a ±20V gate-source voltage, ensuring strong gate robustness against voltage spikes and noise. With a standard 1.5V gate threshold voltage, it ensures easy drive compatibility with mainstream controllers without necessitating circuit changes.
Advanced SGT Technology for Enhanced Switching Performance and Robustness.
While the TPH3R70APL1,LQ leverages TOSHIBA's U-MOS IX technology for low resistance, the VBGQA1103 employs VBsemi's proprietary Shielded Gate Trench (SGT) MOSFET technology. This advanced structure achieves an optimal balance between ultra-low on-resistance and switching characteristics. The SGT design minimizes gate charge (Qg) and intrinsic capacitances, leading to faster switching speeds, reduced switching losses, and lower driving requirements—crucial for high-frequency applications. Furthermore, this technology enhances the device's avalanche ruggedness and body diode characteristics, offering superior reliability under stressful conditions like inductive load switching and reverse recovery. The VBGQA1103 is designed for stable operation across a wide temperature range, making it suitable for industrial, automotive, and consumer applications demanding high durability.
Fully Compatible DFN8(5x6) Package, Enabling Seamless Direct Replacement.
The VBGQA1103 eliminates all hurdles associated with component substitution through its package design. It utilizes the industry-standard DFN8(5x6) package, which is physically and footprint identical to the TPH3R70APL1,LQ. The pin-to-pin compatibility means engineers can directly replace the existing component on the PCB without any layout modifications, thermal redesign, or mechanical adjustments. This "drop-in" replacement capability drastically cuts down validation time and cost, allowing production lines to switch seamlessly. Sample verification can be completed in minimal time, accelerating time-to-market for end products and enabling rapid supply chain diversification.
Localized Supply Chain Assurance and Responsive Technical Support.
Unlike imported components subject to logistical delays and quota limitations, VBsemi guarantees a stable and secure supply for the VBGQA1103 through its integrated domestic manufacturing and stringent quality control. Lead times are significantly shorter and more predictable, shielding customers from market volatility. As a local supplier, VBsemi provides dedicated, responsive technical support. Customers gain access to comprehensive documentation, including detailed application notes and replacement guides, as well as direct engineering assistance for integration challenges. This localized partnership model ensures not only component supply but also collaborative problem-solving, effectively addressing the slow support cycles often associated with international brands.
From brushless DC motor drives and high-current DC-DC converters to battery management systems and high-density server power supplies, the VBGQA1103 stands out as the optimal domestic alternative to the TOSHIBA TPH3R70APL1,LQ. Its core advantages of "higher current rating, lower conduction loss, advanced SGT technology, seamless package compatibility, and secured local supply" provide a compelling value proposition. Choosing VBGQA1103 is more than a component swap; it is a strategic move towards greater supply chain resilience, improved product performance, and enhanced competitive advantage—all achieved with zero redesign risk.