In high-power switching applications such as motor drives, industrial power supplies, inverters, and UPS systems, ROHM's R6011KNX N-channel power MOSFET has been widely adopted by engineers for its balanced performance in voltage rating, current capability, and switching characteristics. However, in today's global landscape marked by supply chain volatility and extended lead times for imported components, reliance on such parts exposes manufacturers to risks including uncertain delivery schedules (often exceeding 12 weeks), cost vulnerabilities due to currency fluctuations, and limited local technical support. These challenges directly impact production planning, cost control, and time-to-market for end products. In this context, domestic substitution is no longer just an alternative but a strategic necessity for ensuring supply chain resilience, reducing costs, and strengthening competitive advantage.
Leveraging its deep expertise in power semiconductor design and manufacturing, VBsemi introduces the VBMB16R11S—a high-performance N-channel MOSFET developed through independent R&D as a direct, pin-to-pin replacement for the R6011KNX. With parameter-to-parameter matching, advanced technology, and full package compatibility, the VBMB16R11S enables seamless substitution without circuit modifications, offering a more reliable, cost-effective, and locally supported solution for demanding high-current applications.
Precise Parameter Matching with Key Enhancements for Superior Performance
Designed as a drop-in alternative to the R6011KNX, the VBMB16R11S delivers identical or improved electrical specifications, ensuring robust operation in high-voltage, high-current environments:
- Drain-Source Voltage (VDS): 600V, fully matching the rated voltage of the R6011KNX, ensuring reliable operation in standard industrial and power supply environments.
- Continuous Drain Current (ID): 11A, equal to the original part, providing ample current handling capability for motor drives, power converters, and other high-load applications.
- On-Resistance (RDS(on)): 380mΩ (at VGS=10V), slightly lower than the R6011KNX’s 390mΩ. This reduction in conduction resistance translates into lower conduction losses, improved efficiency, and reduced thermal dissipation—critical for enhancing system reliability and energy savings.
- Gate-Source Voltage (VGS): ±30V, offering enhanced gate robustness and noise immunity compared to typical ±20V ratings, preventing accidental turn-on in noisy electrical environments.
- Gate Threshold Voltage (Vth): 3.5V, ensuring compatibility with mainstream gate drivers and microcontroller outputs, enabling easy integration without drive circuit redesign.
These parameters ensure that the VBMB16R11S not only meets but in some aspects exceeds the performance of the R6011KNX, providing additional margin in efficiency and thermal performance.
Advanced Multi-EPI SJ Technology for High Efficiency and Reliability
While the R6011KNX employs a planar MOSFET structure, the VBMB16R11S utilizes VBsemi’s proprietary SJ_Multi-EPI (Super Junction Multi-Epitaxial) technology. This advanced design delivers lower specific on-resistance, reduced switching losses, and excellent dv/dt capability—key for high-frequency switching applications. The device is subjected to 100% avalanche energy testing and high-voltage screening during production, ensuring consistent performance under voltage spikes and inductive load switching. With an operating temperature range of -55°C to 150°C and validation through extended reliability tests (including 1000-hour HTGB/HTRB and thermal cycling), the VBMB16R11S offers long-term stability even in harsh industrial environments, making it suitable for critical applications such as industrial motor controls, power inverters, and backup power systems.
Full Package Compatibility for Effortless Replacement
The VBMB16R11S is offered in the industry-standard TO-220F package, which is mechanically and electrically identical to the TO-220FP package used by the R6011KNX. Pinout, footprint, mounting hole positions, and thermal pad layout are fully compatible, allowing for direct replacement on existing PCB designs without any layout changes or thermal re-engineering. This “plug-and-play” substitution significantly reduces validation time—typically requiring only 1–2 days for sample testing—and eliminates costs associated with PCB redesign, retooling, or recertification. Engineers can quickly qualify and adopt the VBMB16R11S, accelerating time-to-market and reducing dependency on imported components.
Local Supply Chain Assurance and Responsive Technical Support
Unlike imported alternatives subject to long lead times and geopolitical uncertainties, VBsemi manufactures the VBMB16R11S within its fully controlled production facilities in China, ensuring stable and scalable supply. Standard lead times are typically within 2–3 weeks, with expedited options available for urgent needs. This short, predictable supply cycle helps manufacturers avoid production delays and inventory shortages. Furthermore, VBsemi provides dedicated local technical support, including comprehensive documentation (datasheets, application notes, thermal guidelines), substitution verification reports, and circuit optimization assistance. Engineers can access prompt, in-region expertise to resolve any design or integration questions, ensuring a smooth and risk-free transition to domestic sourcing.
From motor drive systems and industrial SMPS to UPS units, welding equipment, and renewable energy converters, the VBMB16R11S stands out as a high-reliability, high-performance domestic alternative to the ROHM R6011KNX. With its parameter-matched performance, advanced SJ technology, full package compatibility, and stable local supply, it enables manufacturers to enhance supply chain security, reduce costs, and improve product competitiveness—all without compromising on quality or design effort. Choose VBMB16R11S for a smarter, smoother, and more sustainable component strategy.