Introduction
Power MOSFETs are the crucial "switches" controlling energy flow in modern electronic devices. For a long time, international brands like RENESAS have dominated the market with their classic products, such as the 2SJ133-Z-E1-AZ. However, global supply chain volatility and the need for technological autonomy have made seeking reliable, high-performance domestic alternatives a strategic necessity. Represented by VBsemi's VBE2610N, domestic components are now achieving direct benchmarking and even surpassing international classics.
Part 1: Analysis of the Classic Component
RENESAS's 2SJ133-Z-E1-AZ is a P-channel MOSFET with a drain-source voltage of 60V, continuous drain current of 2A, and on-resistance of 1.3Ω at 4V gate drive. It offers a power dissipation of 20W and is commonly used in low-power applications such as power management, load switching, and consumer electronics, serving as a standard choice for many designs.
Part 2: Performance Surpassing by the Domestic Challenger
VBsemi's VBE2610N directly benchmarks the 2SJ133-Z-E1-AZ and offers improvements in key parameters:
Higher Current Capability: Continuous drain current reaches -30A (a significant increase), providing greater power handling capacity.
Lower Conduction Loss: Typical on-resistance is as low as 61mΩ at 10V gate drive, drastically reducing conduction losses and improving system efficiency.
Enhanced Voltage Ratings: Drain-source voltage is -60V, matching the requirement, with a gate-source voltage of ±20V for robust control.
Full Compatibility: Uses a pin-compatible TO-252 package, enabling direct replacement without PCB modifications.
The device is based on advanced Trench technology, ensuring high performance and reliability.
Part 3: Core Value Beyond Specifications
Choosing a domestic alternative brings deeper advantages:
Ensuring Supply Chain Security: Reduces dependence on international supply chains, ensuring stable supply and production continuity.
Optimizing Overall Cost: Offers better cost competitiveness with superior performance, potentially simplifying peripheral designs.
Accessing Rapid Local Support: Domestic suppliers provide agile technical support and customized solutions for application scenarios.
Boosting the Industrial Ecosystem: Every successful application helps the domestic semiconductor industry grow and innovate.
Part 4: A Robust Path for Substitution Implementation
For a smooth transition, the following steps are recommended:
Detailed Specification Comparison: Compare all key electrical parameters and characteristic curves.
Rigorous Laboratory Testing: Conduct static and dynamic tests, temperature rise/efficiency tests, and reliability stress tests.
Small-Batch Pilot Verification: Trial the component in real products and environments for long-term performance tracking.
Develop a Switchover and Backup Plan: Implement substitution gradually after verification, while keeping the original design as a backup.
Conclusion: Moving from "Usable" to "Excellent"
The evolution from the 2SJ133-Z-E1-AZ to the VBE2610N demonstrates that domestic power semiconductors now possess the capability to compete with and even surpass international classics in certain aspects. Adopting such high-performance domestic components is not only a pragmatic choice to address supply chain challenges but also a strategic move to build an autonomous, resilient, and innovative industrial ecosystem for the future. Now is the opportune time to actively evaluate and introduce high-quality domestic solutions.