VB Replacements

Your present location > Home page > VB Replacements
Breaking Through and Surpassing: How Domestic MOSFETs Achieve High-Performance Substitution for TI TPS1120D
time:2026-02-06
Number of views:9999
Back to previous page
Introduction
Power MOSFETs serve as essential switches in modern electronics, managing energy flow with precision. For years, international giants like Texas Instruments (TI) have set industry standards with components such as the TPS1120D. However, supply chain uncertainties and the push for technological self-reliance have made finding reliable, high-performance domestic alternatives a strategic priority. Represented by VBsemi’s VBA4235, domestic components are now achieving direct competition and even outperforming international classics.
Part 1: Analysis of the Classic Component
TI’s TPS1120D is a dual P-channel enhancement-mode MOSFET with a drain-source voltage (Vdss) of 15V and a continuous drain current (Id) of 1.17A. It features an on-resistance (RDS(on)) of 180mΩ at 10V and 1.5A, balancing moderate performance with reliability. This device is commonly used in low-voltage applications such as power management, battery protection, and portable electronics, serving as a go-to solution for many designs.
Part 2: Performance Surpassing by the Domestic Challenger
VBsemi’s VBA4235 directly competes with the TPS1120D and demonstrates superior key parameters:
Higher Voltage and Current Handling: Drain-source voltage (VDS) is -20V (improved from 15V), and continuous drain current (ID) is -5.4A (significantly higher than 1.17A), offering enhanced safety margins and power capacity.
Lower Conduction Losses: On-resistance (RDS) is as low as 60mΩ at both 2.5V and 4.5V, compared to 180mΩ for the TPS1120D, reducing energy loss and boosting system efficiency.
Full Compatibility: Packaged in SOP8 with a dual P+P configuration, it is pin-compatible for seamless replacement without PCB redesign.
The device utilizes advanced Trench technology, ensuring robust and stable performance.
Part 3: Core Value Beyond Specifications
Opting for a domestic alternative like the VBA4235 delivers deeper benefits:
Ensuring Supply Chain Resilience: Reduces reliance on global supply chains, mitigating risks and ensuring production continuity.
Cost Optimization: Offers competitive pricing with superior performance, potentially lowering overall system costs and simplifying peripheral designs.
Access to Agile Local Support: Domestic suppliers provide faster technical assistance and tailored solutions for specific applications.
Strengthening the Industrial Ecosystem: Each successful adoption fuels innovation and experience in the domestic semiconductor sector, creating a virtuous cycle of growth.
Part 4: A Robust Path for Substitution Implementation
To ensure a smooth transition, follow these steps:
Detailed Specification Comparison: Scrutinize all electrical parameters and characteristic curves between the TPS1120D and VBA4235.
Rigorous Laboratory Testing: Conduct static and dynamic tests, including switching performance, temperature rise, and reliability stress tests.
Small-Batch Pilot Verification: Implement the component in real-world applications to monitor long-term stability and performance.
Develop a Switchover Plan: Gradually integrate the VBA4235 after validation, while keeping the original design as a short-term backup.
Conclusion: Moving from "Usable" to "Excellent"
The shift from TI’s TPS1120D to VBsemi’s VBA4235 illustrates that domestic power MOSFETs have reached a level where they can rival and exceed international benchmarks. Adopting such high-performance domestic components is not only a practical response to supply chain challenges but also a strategic step toward building an autonomous, resilient, and innovative industrial future. Now is the time to actively evaluate and integrate quality domestic solutions like the VBA4235.
Download PDF document
Download now

Sample Req

Online

Telephone

400-655-8788

WeChat

Topping

Sample Req
Online
Telephone
WeChat