In various low-voltage, high-current application scenarios such as power management systems, motor drives, battery-powered devices, LED drivers, and portable electronics, ROHM's RW4E065GNTCL1, with its low on-resistance and high current capability, has been a popular choice for engineers worldwide. However, in the post-pandemic era marked by global supply chain disruptions and trade uncertainties, this imported component faces significant pain points: unpredictable lead times (often extending to several months), procurement costs vulnerable to currency fluctuations, and delayed technical support. These challenges severely impact production schedules and cost control for downstream companies. Given this industry demand, domestic substitution has evolved from an "option" to a "necessity," becoming a critical path for enterprises to ensure supply chain security, reduce costs, and enhance competitiveness.
VBsemi, leveraging years of expertise in the power semiconductor field, has launched the VBQG7313 N-channel MOSFET based on its independent R&D capabilities. This product precisely aligns with the RW4E065GNTCL1, offering core advantages of parameter upgrades, technological parity, and full package compatibility. It can serve as a direct drop-in replacement without any modifications to the original circuit, providing a more stable, cost-effective, and locally attuned high-quality solution for various low-voltage electronic systems.
Comprehensive Parameter Surpassing, Enhanced Performance for Demanding Conditions.
Tailored as a domestic alternative to the RW4E065GNTCL1, the VBQG7313 achieves significant improvements in key electrical parameters, delivering robust performance for high-current applications:
Firstly, the continuous drain current is increased to 12A, substantially surpassing the original model's 6.5A—an 84.6% enhancement in current-carrying capacity. This enables effortless adaptation to higher power demands, whether upgrading existing equipment or improving system stability.
Secondly, the on-state resistance is reduced to 20mΩ (@10V gate drive), lower than the RW4E065GNTCL1's 22.5mΩ (@10V, 6.5A). This reduction minimizes conduction losses, contributing to higher overall efficiency and reduced heat generation, which alleviates cooling system design pressures.
Additionally, the VBQG7313 supports a ±20V gate-source voltage, offering strong gate ESD and noise immunity, preventing unintended turn-on in complex environments. The 1.7V gate threshold voltage ensures easy driving compatibility with mainstream driver ICs, requiring no adjustments to the drive circuit and lowering the substitution barrier.
Enhanced with Advanced Trench Technology, Reliability and Stability Upgraded.
The core advantage of the RW4E065GNTCL1 lies in its low on-resistance and efficient switching performance. The VBQG7313 employs industry-leading Trench technology, building upon the original model's strengths while optimizing device reliability. It undergoes rigorous testing, including avalanche and high-voltage screening, ensuring excellent performance under transient conditions. Through optimized capacitance design, it reduces switching losses and improves dv/dt tolerance, maintaining stable operation even in high-frequency applications. Furthermore, the VBQG7313 features a wide operating temperature range and has passed extensive reliability tests such as high-temperature/high-humidity aging, resulting in a failure rate well below industry averages. This makes it ideal for critical applications requiring durability, such as industrial controls, automotive systems, and consumer electronics.
Fully Compatible Package, Enabling Seamless and Immediate Replacement.
For downstream enterprises, a key concern in domestic substitution is the R&D effort and time involved. The VBQG7313 addresses this through its package design. The device uses a DFN6(2X2) package, identical to the RW4E065GNTCL1 in pinout, dimensions, and thermal structure. Engineers can achieve "plug-and-play" replacement without modifying PCB layouts or thermal designs. This compatibility reduces verification time to 1-2 days, avoids costs from PCB revisions, and eliminates the need for re-certification, accelerating the substitution process and helping enterprises quickly upgrade imported components.
Local Strength Assurance, Dual Peace of Mind for Supply Chain and Technical Support.
Compared to the unstable supply chains of imported components, VBsemi leverages China's robust semiconductor industry chain, with modern production bases in Jiangsu and Guangdong. This enables full-process R&D and stable mass production of the VBQG7313. Current lead times are compressed to within 2 weeks, with emergency orders supporting 72-hour fast delivery, mitigating risks from international logistics, tariffs, and geopolitics. As a local brand, VBsemi provides dedicated technical support: comprehensive documentation including substitution验证 reports, datasheets, thermal guides, and application circuits, along with tailored advice for specific scenarios. The technical team offers 24-hour rapid response for any issues, eliminating the slow support and high communication costs associated with imported components.
From power management and motor drives to battery protection and LED lighting; from portable electronics to automotive applications, the VBQG7313, with its core advantages of "superior parameters, enhanced performance, package compatibility, controllable supply, and responsive service," has become the preferred domestic alternative to the RW4E065GNTCL1. It has already been adopted by leading companies across industries, gaining strong market recognition. Choosing the VBQG7313 is not just a simple component replacement—it is a strategic move for enterprises to upgrade supply chain security, optimize costs, and boost product competitiveness, offering better performance, stable supply, and convenient support without R&D modification risks.