Introduction
Power MOSFETs serve as the critical switches managing energy flow in modern power electronics. For years, international leaders like Infineon have set industry benchmarks with components such as the IPL60R185C7. However, supply chain uncertainties and the pursuit of technological independence have made finding reliable, high-performance domestic alternatives a strategic imperative. Represented by VBsemi’s VBQE165R20S, domestic power semiconductors are now achieving direct competition and even surpassing established international classics.
Part 1: Analysis of the Classic Component
Infineon’s IPL60R185C7 is a high-voltage MOSFET (600V, 21A) built on revolutionary superjunction (SJ) technology. This design delivers a low on-resistance (185mΩ) while maintaining high voltage capability, achieving a breakthrough in RDS(on)area efficiency (<10mΩmm²). It is widely adopted in high-efficiency power supplies, motor drives, and industrial applications, representing a gold standard in its class.
Part 2: Performance Surpassing by the Domestic Challenger
VBsemi’s VBQE165R20S directly competes with the IPL60R185C7 and demonstrates key improvements:
Higher Voltage Rating: Drain-source voltage reaches 650V, offering a 50V higher margin for enhanced reliability in demanding environments.
Lower Conduction Loss: Typical on-resistance is reduced to 160mΩ (at 10V), improving efficiency and reducing heat generation.
Advanced Technology: Utilizes a mature Multi-EPI Superjunction process, ensuring robust performance and high switching efficiency.
Compact Form Factor: Provided in a DFN8x8 package, it supports space-constrained designs while maintaining high power handling (20A continuous current).
Part 3: Core Value Beyond Specifications
Selecting a domestic alternative like the VBQE165R20S delivers deeper strategic benefits:
Supply Chain Resilience: Reduces dependency on single-source international suppliers, ensuring greater control and continuity.
Cost Optimization: Offers competitive pricing with superior performance, enabling potential savings in system design and thermal management.
Localized Support: Domestic suppliers provide faster technical response, customization assistance, and collaborative development.
Strengthening the Industrial Ecosystem: Each successful substitution fuels experience and innovation within the domestic semiconductor sector, creating a virtuous cycle of progress.
Part 4: A Robust Path for Substitution Implementation
To ensure a smooth transition, we recommend:
Detailed Parameter Comparison: Review all electrical characteristics, including VGS, Vth, and switching curves.
Comprehensive Lab Testing: Perform static and dynamic tests, thermal analysis, and long-term reliability validation.
Pilot Implementation: Test the component in real applications to verify performance under actual operating conditions.
Phased Replacement Plan: Adopt the new component gradually while maintaining the previous design as a short-term backup.
Conclusion: From “Alternative” to “Superior”
The transition from Infineon’s IPL60R185C7 to VBsemi’s VBQE165R20S illustrates that domestic power MOSFETs are not only capable of matching international benchmarks but also advancing beyond them in key metrics. Adopting such high-performance domestic components is both a practical response to global supply dynamics and a strategic step toward building an independent, innovative, and resilient power electronics industry. Now is the time to actively evaluate and integrate these superior domestic solutions.