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Breaking VBQF1104N Through and Surpassing: How Domestic Power MOSFETs Achieve High-Performance Substitution IAUZ18N10S5L420
time:2026-01-27
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Introduction
Power MOSFETs serve as critical switches managing energy flow in modern electronics, especially in automotive applications. For years, international giants like Infineon have set industry standards with components such as the IAUZ18N10S5L420. However, global supply chain uncertainties and the push for technological self-reliance have made finding reliable, high-performance domestic alternatives a strategic imperative. Represented by VBsemi’s VBQF1104N, domestic components are now achieving direct对标and even surpassing international benchmarks.
Part 1: Analysis of the Classic Component
Infineon’s IAUZ18N10S5L420 is an N-channel power MOSFET designed for automotive use, featuring a drain-source voltage of 100V, a continuous drain current of 18A, and an on-resistance of 42mΩ at 10V. It leverages enhanced mode, logic-level compatibility, and AEC-Q101 qualification, ensuring reliability in harsh environments. With MSL1 rating for peak reflow temperatures up to 260°C, RoHS compliance, 100% avalanche testing, and AOI suitability, it is widely adopted in automotive systems for its robust performance and trustworthiness.
Part 2: Performance Surpassing by the Domestic Challenger
VBsemi’s VBQF1104N directly对标s the IAUZ18N10S5L420 and demonstrates improvements in key areas:
Higher Current Handling: Continuous drain current reaches 21A (an increase of 3A), enabling greater power capacity and system durability.
Lower Conduction Loss: Typical on-resistance is 36mΩ at 10V (reduced by 6mΩ), minimizing heat generation and enhancing efficiency.
Advanced Packaging: Uses a compact DFN8(3x3) package with trench technology, offering space savings and better thermal management.
Full Compatibility: Matches critical parameters like 100V VDS and logic-level Vth of 1.8V, ensuring seamless integration into existing designs.
Part 3: Core Value Beyond Specifications
Opting for this domestic alternative delivers deeper benefits:
Supply Chain Resilience: Reduces reliance on single-source international suppliers, mitigating risks and ensuring production stability.
Cost Optimization: Provides competitive pricing with superior performance, potentially lowering overall system costs through simplified thermal design.
Rapid Local Support: Domestic suppliers offer agile technical assistance and customization for automotive applications, accelerating development cycles.
Ecosystem Strengthening: Each successful adoption fuels the growth of the domestic semiconductor industry, fostering innovation and self-sufficiency.
Part 4: A Robust Path for Substitution Implementation
To ensure a smooth transition, follow these steps:
Detailed Specification Comparison: Verify all electrical parameters, including VDS, ID, RDS(on), and temperature ratings.
Rigorous Laboratory Testing: Conduct static and dynamic tests, efficiency evaluations, and reliability assessments under automotive conditions.
Small-Batch Pilot Verification: Deploy in real-world automotive environments to monitor long-term performance and compatibility.
Develop a Switchover Plan: Gradually implement the substitution after validation, while retaining the original design as a temporary backup.
Conclusion: Moving from "Usable" to "Excellent"
The progression from Infineon’s IAUZ18N10S5L420 to VBsemi’s VBQF1104N highlights that domestic power semiconductors can not only match but exceed international classics in key metrics. Embracing such high-performance domestic components is a practical response to supply chain challenges and a strategic step toward building an autonomous, resilient, and innovative industrial future. Now is the time to actively evaluate and integrate these superior domestic solutions.
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