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VBM165R15S: The Perfect Domestic Alternative to IPP60R170CFD7, A More Reliable Choice for High-Voltage Applications
time:2026-01-26
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In high-voltage, soft-switching application scenarios such as phase-shift full-bridge (ZVS), LLC resonant converters, switch-mode power supplies, and industrial inverters, Infineon's IPP60R170CFD7, with its revolutionary CoolMOS CFD7 technology based on the superjunction (SJ) principle, fast body diode, and optimized gate charge, has been a preferred choice for engineers worldwide for high-efficiency designs. However, in the post-pandemic era marked by global supply chain disruptions and trade uncertainties, this imported component faces persistent pain points: extended lead times (often several months), procurement costs vulnerable to currency fluctuations, and delayed technical support. These challenges severely impact production schedules and cost control for downstream enterprises. In this context, domestic substitution has evolved from an "option" to a "necessity," becoming a critical strategy for ensuring supply chain security, reducing costs, and enhancing competitiveness.
Leveraging years of expertise in power semiconductors, VBsemi introduces the VBM165R15S N-channel power MOSFET through independent R&D. This product is precisely tailored as a direct alternative to the IPP60R170CFD7, offering core advantages of parameter enhancements, technological parity, and full package compatibility. It enables a drop-in replacement without circuit modifications, delivering a more stable, cost-effective, and locally supported high-quality solution for various high-voltage systems.
Comprehensive Parameter Advancements, Robust Performance for Demanding Conditions.
Designed as a domestic alternative to the IPP60R170CFD7, the VBM165R15S achieves significant improvements in key electrical parameters, providing superior performance guarantees for high-voltage applications:
First, the drain-source voltage is maintained at 650V, matching the original model, ensuring reliable operation in industrial environments with voltage fluctuations and transient overvoltage risks.
Second, the continuous drain current is increased to 15A, a substantial 66.7% enhancement over the original model's 9A. This higher current-carrying capability allows effortless adaptation to higher-power circuit designs, boosting system stability and enabling upgrades to more demanding applications.
Third, the on-state resistance is 220mΩ (@10V gate drive), which, while slightly higher than the IPP60R170CFD7's 170mΩ, is optimized alongside the higher current rating to balance conduction losses and switching performance. This design reduces overall power dissipation and heat generation, contributing to improved efficiency in high-frequency switching scenarios.
Additionally, the VBM165R15S supports a ±30V gate-source voltage, offering stronger gate ESD protection and noise immunity, preventing unintended turn-on in complex electromagnetic environments. The 3.5V gate threshold voltage ensures compatibility with mainstream driver ICs, requiring no adjustments to drive circuits, thus lowering substitution barriers.
Enhanced with SJ_Multi-EPI Technology, Reliability and Stability Inherited and Upgraded.
The core advantage of the IPP60R170CFD7 lies in its CoolMOS CFD7 technology, which delivers fast switching, low reverse recovery charge, and excellent hard commutation robustness for soft-switching applications. The VBM165R15S employs advanced SJ_Multi-EPI technology, building on similar superjunction principles to offer comparable switching characteristics while optimizing device reliability. It undergoes rigorous avalanche testing and high-voltage screening, demonstrating robust single-pulse avalanche energy handling to manage surges during high-voltage turn-off, reducing the risk of device failure. Through optimized intrinsic capacitance design, it minimizes charge/discharge losses during switching and enhances dv/dt tolerance, ensuring stable operation in high-frequency and fast-transient conditions. The device features an ultra-wide operating temperature range of -55°C to 150°C, suitable for harsh industrial environments and outdoor extremes. Having passed long-term reliability tests, including high-temperature/high-humidity aging, its failure rate is well below industry averages, providing solid assurance for critical applications such as industrial control, renewable energy systems, and emergency power supplies.
Fully Compatible Package, Enabling "Seamless and Immediate" Replacement.
For downstream enterprises, a key concern in domestic substitution is the R&D effort and time cost involved. The VBM165R15S addresses this through its package design. The device uses a TO-220 package, which is fully compatible with the IPP60R170CFD7's package in terms of pinout, pin spacing, dimensions, and heatsink structure. Engineers need not modify the original PCB layout or thermal design, achieving "plug-and-play" replacement. This high compatibility reduces verification time—sample validation can typically be completed within 1-2 days—and avoids costs associated with PCB revisions or mold adjustments. It also preserves the original product's structural dimensions, eliminating the need for re-certification or外观 changes, thus shortening the supply chain cycle and helping enterprises quickly adopt the substitution.
Local Strength Assurance, Dual Peace of Mind for Supply Chain Security and Technical Support.
Compared to the volatile supply chain of imported components affected by international logistics, trade policies, and exchange rates, VBsemi leverages China's robust semiconductor industry chain, with modern production bases and R&D centers in regions like Jiangsu and Guangdong. This enables full-process independent R&D and stable mass production of the VBM165R15S. Current standard lead times are compressed to within 2 weeks, with emergency orders supporting 72-hour rapid delivery, mitigating risks from supply chain disruptions, tariffs, or geopolitics. As a local brand, VBsemi offers a professional technical support team providing "one-on-one" customized services, including comprehensive documentation such as substitution验证 reports, datasheets, thermal design guides, and application circuit references. For any technical issues during substitution, the team ensures a 24-hour rapid response, assisting with on-site or remote solutions. This彻底addresses the slow support and high communication costs of imported components, making the substitution process smoother and more reliable.
From phase-shift full-bridge converters and LLC resonant topologies to industrial inverters, UPS systems, and new energy charging equipment, the VBM165R15S, with its core advantages of "higher current capacity, robust performance, package compatibility, controllable supply, and attentive service," has become the preferred domestic alternative to the IPP60R170CFD7. It has already seen adoption in leading companies across multiple industries, receiving strong market recognition. Choosing the VBM165R15S is not merely a component replacement; it is a strategic move for enterprises to upgrade supply chain security, optimize production costs, and enhance product competitiveness—requiring no R&D modification risks while benefiting from superior performance, stable supply, and convenient technical support.
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