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Breaking VBM18R15S Through and Surpassing: How Domestic Power MOSFETs Achieve High-Performance Substitution IPP80R360P7
time:2026-01-26
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Introduction
Power MOSFETs are essential components that act as switches for energy control in modern electronic devices. For years, international brands like Infineon have dominated the market with their classic products, such as the IPP80R360P7. However, global supply chain volatility and the push for technological self-reliance have made seeking reliable, high-performance domestic alternatives a strategic imperative. Represented by VBsemi's VBM18R15S, domestic components are now achieving direct benchmarking and even surpassing international benchmarks.
Part 1: Analysis of the Classic Component
Infineon's IPP80R360P7 is an 800V, 13A N-channel MOSFET featuring advanced technology for optimal performance. It boasts a low on-resistance of 360mΩ at 10V and 5.6A, along with best-in-class figures of merit such as RDS(on) EGS,ij, reduced gate charge and capacitances. With a VGS(th) of 3V and minimal variation of ±0.5V, integrated Zener diode ESD protection, and full compliance with JEDEC industrial standards, it is widely used in hard- and soft-switching flyback topologies for LED lighting, low-power chargers, adapters, audio, auxiliary power, and industrial supplies, as well as PFC stages for consumer and solar applications.
Part 2: Performance Surpassing by the Domestic Challenger
VBsemi's VBM18R15S directly benchmarks against the IPP80R360P7 and offers enhancements in key parameters:
- Higher Current Capacity: Continuous drain current reaches 15A (an increase of 2A), providing greater power handling and design margins.
- Comparable High Voltage: Drain-source voltage maintains 800V, ensuring robust performance in high-voltage applications.
- Optimized Conduction Loss: On-resistance is 380mΩ at 10V, supported by advanced SJ_Multi-EPI technology that improves switching efficiency and thermal management.
- Reliable Gate Drive: VGS rating of ±30V and threshold voltage of 3.5V ensure stable operation under varying drive conditions.
- Package Adaptability: The TO-220 package offers mechanical strength and thermal performance, though design adjustments may be needed for direct replacement from DPAK formats.
- The device leverages a mature SJ_Multi-EPI process, delivering stable and reliable performance in demanding environments.
Part 3: Core Value Beyond Specifications
Choosing a domestic alternative like the VBM18R15S brings deeper advantages:
- Ensuring Supply Chain Security: Reduces dependence on international supply chains, enhancing production stability and continuity.
- Optimizing Overall Cost: Typically offers better cost competitiveness with equivalent or superior performance, enabling system-level savings and peripheral design optimizations.
- Accessing Rapid Local Support: Domestic suppliers like VBsemi provide agile technical support and joint development tailored to specific application scenarios.
- Boosting the Industrial Ecosystem: Every successful adoption helps the domestic semiconductor industry accumulate experience, iterate technology, and foster a virtuous development cycle.
Part 4: A Robust Path for Substitution Implementation
For a smooth transition, the following steps are recommended:
- Detailed Specification Comparison: Carefully compare all key electrical parameters, including voltage, current, on-resistance, and switching characteristics.
- Rigorous Laboratory Testing: Conduct static parameter tests, dynamic switching tests, temperature rise/efficiency tests, and reliability stress tests under real operating conditions.
- Small-Batch Pilot Verification: Trial the VBM18R15S in actual products and environments to validate long-term performance and compatibility.
- Develop a Switchover and Backup Plan: Implement the substitution gradually after successful verification, while retaining the original design as a short-term backup to mitigate risks.
Conclusion: Moving from "Usable" to "Excellent"
The evolution from the IPP80R360P7 to the VBM18R15S demonstrates that domestic power semiconductors now possess the capability to compete with and even surpass international classics in critical aspects. Adopting such high-performance domestic components is not only a pragmatic choice to address current supply chain challenges but also a strategic move to build an autonomous, resilient, and innovative industrial ecosystem for the future. Now is the opportune time to actively evaluate and introduce high-quality domestic solutions like the VBM18R15S.
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