VBMB1603: The Perfect Domestic Alternative to RENESAS IDT RJK0702DPP-E0#T2, A More Reliable Choice for High-Current Applications
In various medium-voltage, high-current application scenarios such as power supplies, motor drives, inverters, and automotive systems, RENESAS IDT's RJK0702DPP-E0#T2, with its advanced technology and robust performance, has been a preferred choice for engineers worldwide. However, in the post-pandemic era with global supply chain disruptions and trade frictions, this imported component faces challenges: unstable lead times, procurement cost volatility, and delayed technical support, which constrain production schedules and cost control for downstream companies. Given this industry demand, domestic substitution has become a necessity for ensuring supply chain security, reducing costs, and enhancing competitiveness.
VBsemi, with years of expertise in power semiconductors, launches the VBMB1603 N-channel power MOSFET based on independent R&D. This product directly对标s the RJK0702DPP-E0#T2, offering core advantages of parameter upgrades, technological parity, and full package compatibility. It serves as a drop-in replacement without circuit modifications, providing a more stable, cost-effective, and locally supported solution for various high-current electronic systems.
Comprehensive Parameter Surpassing, Ample Performance Redundancy, Adapting to More Demanding Conditions.
Tailored as a domestic alternative to the RJK0702DPP-E0#T2, the VBMB1603 achieves significant improvements in key electrical parameters, offering robust performance for high-current applications:
Firstly, the continuous drain current is increased to 210A, more than double the original model's 90A—a 133% enhancement in current-carrying capability. This enables effortless adaptation to higher power designs and improves system stability.
Secondly, the on-state resistance is as low as 2.6mΩ (@10V gate drive), superior to the RJK0702DPP-E0#T2's 4.8mΩ. This 46% reduction in conduction losses directly improves efficiency and reduces heat generation, lowering cooling system demands.
Although the drain-source voltage is 60V, slightly lower than the original 75V, it remains sufficient for many medium-voltage applications, and the enhanced current and reduced RDS(on) provide superior performance in high-current scenarios. Additionally, the VBMB1603 supports a ±20V gate-source voltage, offering strong gate ESD and noise immunity. The 3V gate threshold voltage ensures easy driving and switching reliability, compatible with mainstream driver ICs without circuit adjustments.
Enhanced with Advanced Trench Technology, Reliability and Stability Inherited and Upgraded.
The RJK0702DPP-E0#T2 relies on advanced technology for low on-resistance and high efficiency. The VBMB1603 employs state-of-the-art Trench gate process, optimizing device reliability and switching characteristics. It undergoes rigorous testing, including avalanche and high-voltage screening, ensuring excellent avalanche energy performance and reducing the risk of device damage. Through optimized capacitance design, it minimizes switching losses and enhances dv/dt tolerance, maintaining stable operation under high-frequency switching and fast transients. The VBMB1603 operates over a wide temperature range from -55°C to 150°C, suitable for harsh environments like industrial and automotive applications. It has passed long-term reliability tests, with a failure rate below industry average, ensuring durable performance for critical systems.
Fully Compatible Package, Enabling "Virtually Cost-Free, Risk-Free, and Immediate" Replacement.
For downstream enterprises, domestic substitution often involves R&D costs and time. The VBMB1603 addresses this through package design. It uses a TO-220F package, fully compatible with the RJK0702DPP-E0#T2's package in pinout, dimensions, and heatsink structure. Engineers can replace the component without PCB layout changes or thermal system adjustments, achieving "plug-and-play" convenience. This compatibility reduces verification time to 1-2 days, avoids PCB revision costs, and eliminates re-certification needs, shortening the supply chain cycle and enabling quick substitution.
Local Strength Assurance, Dual Peace of Mind for Supply Chain Security and Technical Support.
Compared to imported components affected by logistics, trade policies, and exchange rates, VBsemi leverages China's semiconductor industry chain with production bases in Jiangsu and Guangdong. The VBMB1603 is independently developed and mass-produced, with lead times compressed to within 2 weeks and emergency delivery in 72 hours. This mitigates risks from supply chain volatility and geopolitics, ensuring smooth production plans. As a local brand, VBsemi offers "one-on-one" technical support: providing detailed substitution reports, datasheets, thermal guides, and application circuits. The technical team responds within 24 hours to resolve issues, addressing slow support and high communication costs of imported components, making substitution smooth and worry-free.
From power supplies and motor drives to inverters and automotive systems, the VBMB1603, with its core advantages of "superior current handling, lower conduction losses, package compatibility, controllable supply, and attentive service," has become the preferred domestic alternative to the RJK0702DPP-E0#T2. It has been adopted by leading companies in various industries, receiving market recognition. Choosing the VBMB1603 is not just a component replacement; it is a strategic move for upgrading supply chain security, optimizing costs, and enhancing product competitiveness—without R&D modification risks, while enjoying better performance, stable supply, and convenient support.