In demanding applications such as Ethernet Power over Ethernet (PoE) soft-start, DC-DC converters, motor drives, and battery management systems, Infineon's ISZ113N10NM5LF2ATMA1 has been a preferred choice for engineers, valued for its extremely low on-resistance, wide safe operating area (SOA), 100% avalanche testing, and compliance with rigorous environmental standards. However, in the current landscape marked by global supply chain complexities and extended lead times, reliance on imported components like this one often introduces challenges related to procurement volatility, cost fluctuations due to exchange rates, and slower technical response. These factors can impede product development cycles and affect manufacturing stability. Consequently, sourcing a reliable, high-performance domestic alternative has evolved from a strategic consideration into an operational imperative for ensuring supply chain resilience and cost-effectiveness.
Leveraging its extensive expertise in power semiconductor technology, VBsemi introduces the VBGQF1610 N-channel MOSFET. This device is engineered as a pin-to-pin and performance-optimized alternative to the ISZ113N10NM5LF2ATMA1, offering key advantages of enhanced efficiency, advanced technology, and full package compatibility. It enables a direct replacement in existing designs without circuit modifications, delivering a more accessible, stable, and locally supported solution for modern power systems.
Superior Efficiency and Performance in a Compact Footprint
Designed as a high-efficiency alternative to the ISZ113N10NM5LF2ATMA1, the VBGQF1610 delivers exceptional electrical characteristics tailored for space-constrained and efficiency-critical applications:
Firstly, the device features an ultra-low on-resistance (RDS(on)) of only 11.5 mΩ (measured at VGS=10V). This represents a significant reduction in conduction losses compared to many standard solutions, directly translating to higher system efficiency, reduced heat generation, and potential for smaller heatsinks or improved power density.
Secondly, with a continuous drain current (ID) rating of 35A, the VBGQF1610 provides robust current-handling capability suitable for a broad range of mid-to-high-power applications, including PoE systems and motor control circuits.
Thirdly, the incorporation of Shielded Gate Trench (SGT) technology is a cornerstone of its performance. SGT technology markedly reduces gate charge (Qg) and minimizes switching losses, enabling higher-frequency operation with greater efficiency. This makes the VBGQF1610 particularly advantageous in high-frequency switching regulators and converters where switching loss is a primary concern.
Furthermore, the device supports a gate-source voltage (VGS) range of ±20V, offering strong resilience against gate noise and voltage spikes. The optimized threshold voltage (Vth) of 1.7V ensures reliable switching and easy drive compatibility with common controller ICs, simplifying the design-in process.
Advanced SGT Technology for Enhanced Reliability and Switching Performance
The ISZ113N10NM5LF2ATMA1 is recognized for its low RDS(on) and robustness. The VBGQF1610 builds upon this foundation by utilizing advanced SGT MOSFET technology. This technology not only achieves very low on-resistance but also provides excellent figures of merit (FOM) by optimally balancing RDS(on) and gate charge. The result is a device that excels in both conduction and switching efficiency.
The VBGQF1610 undergoes comprehensive reliability testing, including 100% avalanche energy capability verification, ensuring it can withstand unpredictable voltage transients and inductive load switching events. Its optimized internal capacitance characteristics contribute to a high dv/dt immunity, promoting stable operation in demanding environments with fast voltage transitions. The device is designed for an extended operating temperature range, guaranteeing consistent performance across various challenging conditions.
Fully Compatible DFN8(3x3) Package for Seamless Replacement
A primary concern in component substitution is the engineering effort required for redesign and validation. The VBGQF1610 eliminates this hurdle through its package design. It is offered in a compact DFN8 (3x3) package, which is footprint-compatible with common industry-standard packages for such MOSFETs. This allows engineers to drop the VBGQF1610 directly onto existing PCB layouts designed for similar components, achieving a true "plug-and-play" replacement experience.
This high degree of compatibility drastically reduces the time and cost associated with substitution. No PCB redesign, thermal system rework, or mechanical modifications are necessary. Sample validation can be completed rapidly, accelerating time-to-market for end products and enabling a swift transition from imported to domestically sourced components.
Local Supply Chain Assurance and Responsive Technical Support
Unlike imported components susceptible to international logistics delays and allocation uncertainties, VBsemi's VBGQF1610 is backed by a stable domestic supply chain. With modern manufacturing and R&D facilities within China, VBsemi guarantees consistent production capacity and significantly shorter lead times, typically within a few weeks, mitigating risks related to geopolitical factors or trade policy changes.
Complementing the supply advantage is VBsemi's dedicated local technical support. The team provides comprehensive documentation, including detailed datasheets, application notes, and replacement guidance. Engineers have access to prompt, "one-on-one" technical assistance for any design-in queries or optimization needs, ensuring a smooth and supported transition away from imported alternatives.
From PoE switches and network equipment to compact power supplies, motor drives, and various consumer electronics, the VBGQF1610 stands out as a superior domestic alternative to the ISZ113N10NM5LF2ATMA1. Its combination of high efficiency (ultra-low RDS(on)), advanced SGT technology, compact DFN8 package compatibility, reliable performance, and stable local supply makes it an ideal choice. Choosing the VBGQF1610 is more than a component swap; it is a strategic move towards greater supply chain control, reduced total cost of ownership, and enhanced product performance without incurring redesign risks.