Driven by the dual forces of automotive electrification and supply chain autonomy, the domestic substitution of core power devices has evolved from a backup option to a strategic imperative. Facing the stringent requirements for high efficiency, high power density, and robust reliability in low-voltage, high-current applications such as motor drives and power management systems, finding a domestic alternative solution that is powerful, reliable in quality, and stable in supply has become a critical task for numerous automakers and Tier-1 suppliers. When focusing on the high-performance 80V N-channel MOSFET from Infineon—the BSZ123N08NS3G—the VBGQF1810, launched by VBsemi, emerges as a formidable contender. It not only achieves precise performance alignment but also realizes a leap forward in key parameters based on advanced SGT (Shielded Gate Trench) technology, representing a value transformation from "usable" to "excellent," from "substitution" to "surpassing."
I. Parameter Comparison and Performance Leap: Fundamental Advantages Brought by SGT Technology
The BSZ123N08NS3G has earned recognition in applications like motor control, DC-DC conversion, and battery management due to its 80V voltage rating, 56A continuous drain current, and 12.3mΩ on-state resistance (@10V). However, as system demands for efficiency and power density become more stringent, the inherent conduction losses and thermal performance of the device present opportunities for optimization.
1. Building on functional compatibility with the same 80V drain-source voltage and a compact DFN8(3x3) footprint, the VBGQF1810 achieves significant breakthroughs in key electrical characteristics through advanced SGT technology:
Significantly Reduced On-Resistance: With VGS = 10V, the RDS(on) is as low as 9.5mΩ, a reduction of over 22% compared to the reference model. According to the conduction loss formula Pcond = I_D^2⋅RDS(on), losses are substantially lower at typical operating currents, directly improving system efficiency, reducing temperature rise, and simplifying thermal design.
Optimized Switching Performance: Benefiting from the superior structure of SGT technology, the device features favorable gate charge (Qg) and capacitance characteristics, enabling lower switching losses and supporting higher frequency operation, thereby enhancing system power density and dynamic response.
Balanced Performance Profile: With a continuous drain current (ID) of 51A and a standard gate threshold voltage (Vth) of 1.7V, the VBGQF1810 offers a robust and efficient solution for a wide range of 80V applications, ensuring stable operation and good drive compatibility.
II. Deepening Application Scenarios: From Functional Replacement to System Upgrade
The VBGQF1810 not only enables a form-factor-aware replacement in existing designs using the BSZ123N08NS3G but can also drive overall system performance improvements with its advantages:
1. Brushed/Brushless DC Motor Drives
Lower conduction losses translate to higher efficiency and reduced heat generation in motor drive circuits for pumps, fans, or auxiliary systems, contributing to longer lifespan and improved reliability.
2. Battery Management Systems (BMS) & Protection Circuits
The low RDS(on) minimizes voltage drop and power loss in discharge/charge paths, enhancing overall battery utilization efficiency and system runtime.
3. High-Current DC-DC Converters (e.g., 48V/12V)
In automotive dual-battery systems or industrial power supplies, the device's efficiency gains support higher power density designs and contribute to better thermal management.
4. Power Tools and Portable Equipment
The combination of low on-resistance and a compact package makes it ideal for space-constrained, battery-powered applications requiring high burst current capability and efficiency.
III. Beyond Parameters: Reliability, Supply Chain Security, and Full-Lifecycle Value
Choosing the VBGQF1810 is not only a technical decision but also a consideration of supply chain and commercial strategy:
1. Domestic Supply Chain Security
VBsemi possesses controllable capabilities across the chain, ensuring stable supply, predictable lead times, effectively responding to external supply fluctuations, and safeguarding production continuity.
2. Comprehensive Cost Advantage
With superior performance in key parameters like RDS(on), domestic components offer a more competitive value proposition, reducing BOM costs and enhancing end-product market competitiveness.
3. Localized Technical Support
Provides rapid, full-process support from selection, simulation, testing, to failure analysis, assisting customers with system optimization and troubleshooting, accelerating R&D cycles.
IV. Adaptation Recommendations and Replacement Path
For design projects currently using or planning to use the BSZ123N08NS3G, the following steps are recommended for evaluation and switching:
1. Electrical Performance Verification
Compare key waveforms and efficiency under identical circuit conditions. Utilize the lower RDS(on) of the VBGQF1810 to potentially optimize drive parameters or reduce losses further.
2. Thermal Design and Layout Validation
Due to reduced conduction losses, thermal stress may be lower. Re-evaluate thermal performance in the application to confirm reliability or explore potential for size reduction in heatsinking.
3. Reliability Testing and System Validation
After completing necessary electrical, thermal, and environmental tests in the lab, proceed to application-specific validation to ensure long-term operational stability under real-world conditions.
Advancing Towards an Autonomous, High-Performance Power Electronics Era
The VBsemi VBGQF1810 is not merely a domestic MOSFET对标ing international brands; it is a high-efficiency, high-density solution for next-generation low-voltage, high-current power systems. Its advantages in conduction loss and switching performance can help customers achieve comprehensive improvements in system efficiency, thermal management, and overall competitiveness.
In an era where electrification and domestic substitution advance hand-in-hand, choosing the VBGQF1810 is both a rational decision for technological upgrade and a strategic move for supply chain autonomy. We sincerely recommend this product and look forward to collaborating with you to drive innovation and transformation in power electronics.