Introduction
Power MOSFETs are the crucial "switches" controlling energy flow in modern electronic devices. For a long time, international brands like TOSHIBA have dominated the market with their classic products, such as the TPH2R608NH,L1Q. However, global supply chain volatility and the need for technological autonomy have made seeking reliable, high-performance domestic alternatives a strategic necessity. Represented by VBsemi's VBGQA1602, domestic components are now achieving direct benchmarking and even surpassing international classics.
Part 1: Analysis of the Classic Component
TOSHIBA's TPH2R608NH,L1Q is an N-channel MOSFET with a drain-source voltage of 75V and a continuous drain current of 150A. It features a low on-resistance of 2.6mΩ at 10V, 50A, ensuring efficient power handling. This component is widely used in high-current applications such as power supplies, motor drives, and industrial equipment, serving as a standard choice for many designs.
Part 2: Performance Surpassing by the Domestic Challenger
VBsemi's VBGQA1602 directly benchmarks the TPH2R608NH,L1Q and offers improvements in key parameters:
- Higher Current Handling: Continuous drain current reaches 180A (an increase of 30A), providing greater power handling capability.
- Lower Conduction Loss: Typical on-resistance is 1.7mΩ at 10V (compared to 2.6mΩ), significantly reducing conduction losses and improving system efficiency.
- Advanced Technology: Utilizes SGT (Shielded Gate Transistor) technology, optimizing performance and reliability.
- Compact Package: The DFN8(5X6) package is suitable for space-constrained designs, enabling flexible integration.
While the drain-source voltage is 60V (slightly lower than 75V), it remains sufficient for many applications within this range, making it a viable and enhanced alternative.
Part 3: Core Value Beyond Specifications
Choosing a domestic alternative brings deeper advantages:
- Ensuring Supply Chain Security: Reduces dependence on international supply chains, ensuring supply stability and production continuity.
- Optimizing Overall Cost: Typically offers better cost competitiveness with equivalent or superior performance, enabling optimization of peripheral designs.
- Accessing Rapid Local Support: Domestic suppliers can provide more agile technical support and joint development tailored to actual application scenarios.
- Boosting the Industrial Ecosystem: Every successful application helps the domestic semiconductor industry accumulate experience and iterate technology, forming a virtuous development cycle.
Part 4: A Robust Path for Substitution Implementation
For a smooth transition, the following steps are recommended:
- Detailed Specification Comparison: Carefully compare all key electrical parameters and characteristic curves to ensure compatibility.
- Rigorous Laboratory Testing: Conduct static parameter tests, dynamic switching tests, temperature rise/efficiency tests, and reliability stress tests.
- Small-Batch Pilot Verification: Trial the component in real products and environments, tracking long-term performance.
- Develop a Switchover and Backup Plan: Implement the substitution gradually after verification is complete, while retaining the original design as a short-term backup.
Conclusion: Moving from "Usable" to "Excellent"
The evolution from the TPH2R608NH,L1Q to the VBGQA1602 demonstrates that domestic power semiconductors now possess the capability to compete with and even surpass international classics in certain aspects. Adopting such high-performance domestic components is not only a pragmatic choice to address current supply chain challenges but also a strategic move to build an autonomous, resilient, and innovative industrial ecosystem for the future. Now is the opportune time to actively evaluate and introduce high-quality domestic solutions.