In demanding high-voltage, high-frequency switching applications such as server and telecom power supplies, industrial motor drives, solar inverters, and automotive onboard chargers, Infineon’s IPD60R180P7, leveraging its revolutionary 7th-generation CoolMOS P7 platform based on the superjunction (SJ) principle, has set a benchmark with extremely low ringing tendency, outstanding robustness in hard commutation, excellent ESD capability, and minimized switching and conduction losses. However, in the current climate of global semiconductor shortages, extended lead times, and escalating import costs, reliance on such overseas components introduces significant risks: unpredictable delivery schedules, vulnerability to trade policy shifts, and limited localized technical support. These challenges directly impact product time-to-market, cost predictability, and supply chain resilience. Consequently, domestic substitution is no longer just a strategic consideration but a critical imperative for ensuring design freedom, cost optimization, and supply security.
Responding to this pressing market need, VBsemi, drawing upon its extensive expertise in advanced power semiconductor design, introduces the VBE165R20S N-channel superjunction MOSFET. This device is meticulously engineered as a direct, pin-to-pin replacement for the IPD60R180P7, delivering not only full parametric compatibility but also meaningful performance enhancements and the reliability expected from a localized supply chain. It enables a seamless upgrade path without circuit redesign, offering a superior, cost-effective, and readily available solution for next-generation high-efficiency power systems.
Significant Parameter Advancements: Higher Current, Lower Losses, Greater Design Headroom.
Precisely tailored to replace the IPD60R180P7, the VBE165R20S demonstrates clear advantages across key electrical specifications, providing engineers with increased performance margins and design flexibility:
Voltage Rating: It maintains the same 650V drain-source voltage (Vdss), offering robust protection against voltage spikes and ensuring reliable operation in 600V-class applications.
Current Capability: The continuous drain current (Id) is substantially increased to 20A, a remarkable 82% improvement over the original's 11A. This leap in current-handling capacity supports higher power density designs, allows for derating for enhanced reliability, or enables the use of fewer paralleled devices, simplifying system architecture.
Conduction Losses: The on-state resistance is reduced to 160mΩ (@10V Vgs), surpassing the IPD60R180P7's 180mΩ. This 11% reduction in RDS(on) directly translates to lower conduction losses, improving system efficiency and reducing thermal dissipation requirements, which is crucial for compact, high-power applications.
Drive Compatibility: With a gate-source voltage (Vgs) rating of ±30V and a standard 3.5V threshold (Vth), it ensures strong noise immunity and seamless compatibility with mainstream gate driver ICs, requiring no modifications to the existing drive circuitry.
Advanced SJ_Multi-EPI Technology: Delivering CoolMOS-Level Performance with Enhanced Reliability.
The IPD60R180P7 excels due to Infineon's CoolMOS P7 superjunction technology. The VBE165R20S employs VBsemi's proprietary SJ_Multi-EPI (Multi-Epitaxial) technology, which achieves a similar optimized charge balance in the drift region. This advanced manufacturing process enables the device to inherit the essential benefits of low switching loss and excellent dv/dt capability while further enhancing ruggedness. The VBE165R20S features an optimized internal diode with superior reverse recovery characteristics, ensuring exceptional robustness during hard-switching and inductive load commutation. Its low gate charge (Qg) and output capacitance (Coss) minimize switching losses, enabling higher frequency operation and contributing to higher system efficiency. Furthermore, the device is subjected to rigorous 100% avalanche energy testing and high-voltage screening, guaranteeing consistent performance and long-term reliability under stressful operating conditions. With an operational junction temperature range of -55°C to 150°C, it is built to withstand the rigors of industrial and automotive environments.
Complete Package Compatibility: Enabling Drop-In Replacement with Zero Design Effort.
The VBE165R20S eliminates the primary hurdles of component substitution—time, cost, and risk—through its fully compatible package design. It is offered in the industry-standard TO-252 (DPAK) package, which is mechanically and electrically identical to the IPD60R180P7. The footprint, pinout, and mounting pad layout are exactly the same, allowing for a true "drop-in" replacement on the existing PCB. This compatibility removes the need for any board re-layout, thermal redesign, or mechanical re-qualification. Engineering validation can be completed swiftly, often within days, accelerating the time-to-market for end products. Manufacturers can seamlessly transition their production lines without incurring additional costs for solder stencil changes, re-tooling, or inventory complexity.
Localized Supply Chain Assurance: Unmatched Availability and Responsive Support.
Unlike import components constrained by international logistics and allocation, VBsemi's domestic manufacturing footprint ensures a stable, transparent, and responsive supply for the VBE165R20S. With modern production facilities and streamlined logistics within China, standard lead times are consistently shortened, and urgent demands can be met with rapid turnaround. This stability shields customers from geopolitical uncertainties, tariff fluctuations, and supply chain disruptions. Complementing this supply security, VBsemi provides dedicated, local technical support. Engineers have direct access to comprehensive documentation—including detailed substitution guides, application notes, and SPICE models—as well as prompt, in-depth assistance for design integration, troubleshooting, and optimization, effectively resolving the slow response times often associated with overseas suppliers.
From high-efficiency SMPS and PFC stages to motor drives in industrial automation, and from renewable energy systems to automotive auxiliary power supplies, the VBE165R20S stands as the premier domestic alternative to the IPD60R180P7. Its compelling advantages of higher current rating, lower on-resistance, proven SJ_Multi-EPI technology, perfect package compatibility, and a secure local supply chain have already been validated in numerous customer applications. Choosing the VBE165R20S is more than a component swap; it is a strategic decision to enhance product performance, secure the supply base, reduce costs, and gain a competitive edge—all without assuming redesign risks.