Introduction
Power MOSFETs are the crucial "switches" controlling energy flow in modern electronic devices. For a long time, international brands like Infineon have dominated the market with their classic products, such as the IPD60R650CE. However, global supply chain volatility and the need for technological autonomy have made seeking reliable, high-performance domestic alternatives a strategic necessity. Represented by VBsemi's VBE165R09S, domestic components are now achieving direct对标and even surpassing international classics.
Part 1: Analysis of the Classic Component
Infineon's IPD60R650CE is a high-voltage MOSFET (650V, 9.9A) utilizing CoolMOS™ technology based on the superjunction (SJ) principle. This revolutionary technology achieves a balance between low on-resistance (650mΩ) and high voltage withstand capability, offering high efficiency and cost-effectiveness for cost-sensitive applications in consumer and lighting markets. It has become a standard choice for designs requiring fast switching and reliable performance.
Part 2: Performance Surpassing by the Domestic Challenger
VBsemi's VBE165R09S directly对标s the IPD60R650CE and offers improvements in key parameters:
Lower Conduction Loss: Typical on-resistance is 500mΩ (a reduction of 150mΩ), significantly reducing conduction losses and improving system efficiency.
High Voltage Withstand and Current: Drain-source voltage reaches 650V, and continuous drain current reaches 9A, providing robust power handling capability.
Full Compatibility: Uses a pin-compatible TO-252 package, enabling direct replacement without PCB modifications.
The device is based on an optimized SJ_Multi-EPI technology, ensuring stable and reliable performance.
Part 3: Core Value Beyond Specifications
Choosing a domestic alternative brings deeper advantages:
Ensuring Supply Chain Security: Reduces dependence on international supply chains, ensuring supply stability and production continuity.
Optimizing Overall Cost: Typically offers better cost competitiveness with superior performance, potentially enabling optimization of peripheral designs.
Accessing Rapid Local Support: Domestic suppliers can provide more agile technical support and joint development tailored to actual application scenarios.
Boosting the Industrial Ecosystem: Every successful application helps the domestic semiconductor industry accumulate experience and iterate technology, forming a virtuous development cycle.
Part 4: A Robust Path for Substitution Implementation
For a smooth transition, the following steps are recommended:
Detailed Specification Comparison: Carefully compare all key electrical parameters and characteristic curves.
Rigorous Laboratory Testing: Conduct static parameter tests, dynamic switching tests, temperature rise/efficiency tests, and reliability stress tests.
Small-Batch Pilot Verification: Trial the component in real products and environments, tracking long-term performance.
Develop a Switchover and Backup Plan: Implement the substitution gradually after verification is complete, while retaining the original design as a short-term backup.
Conclusion: Moving from "Usable" to "Excellent"
The evolution from the IPD60R650CE to the VBE165R09S demonstrates that domestic power semiconductors now possess the capability to compete with and even surpass international classics in certain aspects. Adopting such high-performance domestic components is not only a pragmatic choice to address current supply chain challenges but also a strategic move to build an autonomous, resilient, and innovative industrial ecosystem for the future. Now is the opportune time to actively evaluate and introduce high-quality domestic solutions.