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VBP165C30-4L Product details

Product introduction:

Product Overview
The VBsemi VBP165C30-4L is a Single N-channel SiC MOSFET, belonging to the VBsemi product series. This product offers high performance and stability, making it suitable for various high-efficiency power control and switching applications. Manufactured using advanced SiC technology, it features a high drain-source voltage (VDS) of 650V and operates at a gate-source voltage (VGS) of -10 / +20V. The product is packaged in TO247-4L, making it ideal for high-power and high-frequency environments requiring superior thermal performance and reliability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247-4L Single N 650V -10 / +20 2~5 30A 70(mΩ) SiC
Product Parameters:
Drain-Source Voltage (VDS): 650V
Gate-Source Voltage (VGS): -10 / +20V
Threshold Voltage (Vth): 2~5V
Drain-Source On-Resistance (RDS(on) @ VGS=18V): 70 mΩ
Maximum Drain Current (ID): 70A
Technology: SiC

Domain and module applications:

Application Fields and Modules:
1. Industrial Power Supplies: The VBP165C30-4L is suitable for high-efficiency industrial power supply modules, such as server power supplies and telecom rectifiers, providing high power density and excellent thermal management.
2. Electric Vehicle Power Systems: In EV traction inverters and onboard chargers, this SiC MOSFET can serve as a high-speed switching component, improving efficiency and power density while reducing system size and weight.
3. Motor Drives: This model is ideal for high-performance motor control modules, such as industrial servo drives and EV motor controllers, enabling precise speed and torque control with minimal switching losses.
4. Renewable Energy Systems: In solar inverters and wind power converters, the VBP165C30-4L can be used in high-voltage switching circuits to maximize energy conversion efficiency and system reliability.
5. High-Frequency Power Converters: This product is well-suited for LLC resonant converters and phase-shifted full-bridge topologies in data center power supplies, where high-frequency operation and low losses are critical.
6. Uninterruptible Power Supplies (UPS): In high-efficiency UPS systems, this MOSFET can be used in PFC and inverter stages to ensure high power factor, low harmonic distortion, and robust performance during power outages.
7. Induction Heating and Welding Equipment: The VBP165C30-4L can be applied in high-power induction heating controllers and welding power sources, offering fast switching and high temperature stability for demanding industrial processes.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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