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VBQF1101M: The Advanced Surface-Mount Alternative to IRFHM3911TRPBF for Compact, High-Reliability Designs
time:2025-12-31
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In an era demanding supply chain agility and component excellence, engineers seek robust alternatives without compromising performance. For designs utilizing Infineon's IRFHM3911TRPBF MOSFET, VBsemi's VBQF1101M emerges as a superior, pin-to-pin compatible solution engineered for modern power applications.
Beyond Direct Replacement: A Performance-Optimized Successor
The IRFHM3911TRPBF is a proven 100V N-channel MOSFET in a PQFN-8L (3.3x3.3) package, known for its large SOA and low thermal resistance. The VBQF1101M builds upon this foundation with enhanced electrical characteristics in an industry-standard DFN8(3x3) footprint, offering a strategic upgrade path.
Key Technical Advantages & Comparison:
Voltage & Package: Both are 100V, single N-channel MOSFETs in compact, low-profile (<1.05mm) surface-mount packages with standard pinouts, ensuring seamless PCB compatibility.
Enhanced On-Resistance: The VBQF1101M features a competitive on-resistance of 130mΩ @ 10V gate drive, closely matching the IRFHM3911TRPBF's 115mΩ @10V, while offering a favorable 150mΩ @ 4.5V threshold for lower gate drive applications.
Robust Current Handling: With a continuous drain current rating of 4A, the VBQF1101M provides reliable performance parity for targeted applications.
Superior Gate Threshold & Protection: Featuring a standard gate threshold voltage (Vgs(th)) of 1.8V and a robust ±20V gate-source voltage rating, the VBQF1101M ensures stable operation and enhanced durability in demanding environments.
Where It Excels: Application-Specific Benefits
The VBQF1101M's optimized parameters translate into tangible system improvements:
PoE+ (Power over Ethernet Plus) Powered Devices: Its low RDS(on) and efficient switching characteristics minimize conduction and switching losses in PoE+ power switches, leading to cooler operation, improved system efficiency, and higher power delivery reliability.
Compact DC-DC Converters & Power Modules: The low-profile DFN package and excellent thermal performance enable high-power-density designs, making it ideal for space-constrained applications like telecom bricks, networking equipment, and portable devices.
General-Purpose Load Switching & Management: The combination of 100V rating, 4A capability, and robust ESD protection ensures safe and reliable control of motors, solenoids, and LEDs.
Strategic Value: Reliability, Supply Chain Security & Cost Efficiency
Choosing VBQF1101M is a decision that strengthens both your design and supply chain:
Guaranteed Compatibility & Performance: As a direct functional and footprint alternative, it offers a low-risk, drop-in replacement with equivalent or superior key specifications.
Mitigated Supply Chain Risk: Sourcing from VBsemi, a leading Chinese semiconductor manufacturer, diversifies your supply base, reducing dependency on single sources and enhancing procurement resilience.
Cost-Effective BOM Optimization: Competitive pricing provides significant savings without sacrificing quality or performance, improving your product's overall value proposition.
Conclusion: The Smart Upgrade for Next-Generation Designs
VBsemi's VBQF1101M is more than just an alternative to the IRFHM3911TRPBF; it is a strategic component choice for the global market. It delivers the required performance for a confident replacement, offers optimized characteristics for improved efficiency, and comes with the advantages of a secure, diversified supply chain.
For your next PoE+, compact power converter, or high-reliability switching design, evaluating the VBQF1101M isn't merely about finding a substitute—it's about upgrading to a smarter, more sustainable, and future-ready solution.
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