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VBA4338: The High-Performance Dual P-Channel MOSFET for Modern Compact Designs
time:2025-12-31
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In an era demanding supply chain resilience and component excellence, engineers are actively seeking superior alternatives to legacy parts. For designs utilizing Infineon's IRF7104TRPBF dual P-channel MOSFET, the VBsemi VBA4338 emerges not just as a replacement, but as a strategic upgrade offering enhanced performance and reliability.
Beyond Direct Replacement: A Technical Leap Forward
While the IRF7104TRPBF is a proven solution with its -20V, -2.3A rating in an SO-8 package, the VBA4338 redefines performance benchmarks for dual P-channel MOSFETs in the same compact footprint.
Superior Electrical Characteristics:
Higher Voltage Rating: The VBA4338 offers a robust -30V drain-source voltage, providing a 50% greater safety margin over the -20V rating of the IRF7104TRPBF, enhancing system durability in demanding environments.
Dramatically Lower Conduction Losses: This is the most significant upgrade. The VBA4338 features an exceptionally low on-resistance of only 35mΩ at 10V gate drive (45mΩ at 4.5V). This represents an improvement of over 90% compared to the IRF7104TRPBF's 400mΩ. The result is drastically reduced power dissipation and much cooler operation.
Substantially Higher Current Capability: With a continuous drain current rating of -7.3A, the VBA4338 delivers over three times the current handling capacity of the -2.3A IRF7104TRPBF. This enables more powerful and compact designs.
Quantifiable Efficiency Gains:
According to the conduction loss formula P = I² x RDS(on), at a typical 2A load, the VBA4338 reduces power dissipation by approximately 90% compared to the IRF7104TRPBF. This efficiency translates directly into less heat, smaller heatsinks, higher reliability, and extended battery life in portable devices.
Where It Excels: Application Advantages
The technical superiority of the VBA4338 delivers tangible benefits in key applications:
Load Switching & Power Management: In battery-powered devices, servers, and telecom systems, its ultra-low RDS(on) minimizes voltage drop and power loss in power path control, leading to superior efficiency.
Motor Drive & Control: For compact fans, pumps, and actuators, the high current rating and low resistance ensure robust drive capability with minimal heating.
Space-Constrained DC-DC Converters: The SOP8 package combined with high performance makes it ideal for synchronous rectification or high-side switching in dense power supply modules.
The Strategic Value: Performance & Supply Chain Security
Choosing the VBA4338 optimizes both your design and your supply chain strategy.
Guaranteed Performance Superiority: The datasheet confirms it significantly exceeds the key specifications of the IRF7104TRPBF, enabling a seamless and performance-enhancing design transition.
Mitigate Supply Chain Risk: Sourcing from a leading manufacturer like VBsemi diversifies your supply base, providing resilience against shortages and market volatility.
Cost-Effective Innovation: The competitive value proposition allows for a higher-performance BOM without increasing cost, boosting your product's competitiveness.
Conclusion: The Intelligent Choice for Advanced Electronics
VBsemi’s VBA4338 is more than an alternative; it is the definitive choice for next-generation designs requiring dual P-channel MOSFETs. It delivers a monumental leap in efficiency and current capability over the IRF7104TRPBF, all within the same SOP8 package, backed by the security of a diversified supply chain.
For your upcoming designs in power management, motor control, or compact converters, adopting the VBA4338 isn't merely substitution—it's a clear upgrade to a smarter, more efficient, and more reliable solution.
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