In the pursuit of supply chain resilience and optimized performance, engineers globally are seeking reliable alternatives to established power MOSFETs. For those evaluating Infineon's BSZ075N08NS5—a benchmark for high-frequency switching—VBsemi's VBGQF1806 emerges as a superior, strategically designed replacement.
This is not just a pin-to-pin substitute. The VBGQF1806 delivers enhanced electrical characteristics while providing the stability and cost advantages of a modern, diversified supply source.
Beyond Direct Replacement: A Technical Enhancement
While the BSZ075N08NS5 is a proven solution with its 80V, 73A rating and optimized DC/DC performance, the VBGQF1806 builds upon this foundation for greater efficiency. Featuring the same 80V drain-source voltage and a compact DFN8(3x3) package, it excels in critical parameters:
Matched Low Conduction Loss: The VBGQF1806 achieves an identical, industry-leading low on-resistance (RDS(on)) of 7.5mΩ at a 10V gate drive. This ensures no compromise in conduction efficiency compared to the BSZ075N08NS5.
Optimized for High-Frequency Operation: As an SGT (Shielded Gate Trench) MOSFET, the VBGQF1806 is engineered for superior switching performance. It offers an excellent figure of merit (FOM) with low gate charge, directly translating to reduced switching losses in high-frequency applications.
Robust and Reliable Design: The component undergoes 100% avalanche testing and features an enlarged source interconnect for enhanced solder joint reliability, meeting stringent quality and durability standards.
Where It Excels: Application Advantages
The technical profile of the VBGQF1806 makes it ideal for demanding power conversion applications:
High-Frequency DC/DC Converters: Its low RDS(on) and excellent FOM minimize both conduction and switching losses, boosting efficiency in buck, boost, and synchronous rectifier stages. This simplifies thermal management and helps meet tight energy efficiency regulations.
Synchronous Rectification: The fast switching characteristics and low on-resistance make it an outstanding choice for secondary-side synchronous rectification, improving overall power supply efficiency and power density.
Compact Power Systems: The DFN8(3x3) package supports space-constrained, high-current designs, enabling more compact and powerful solutions for computing, telecom, and industrial equipment.
The Strategic Value: Performance & Supply Chain Security
Selecting the VBGQF1806 benefits your design's performance and your supply chain resilience.
Guaranteed Performance Parity: The datasheet confirms it matches or exceeds the key electrical specifications of the BSZ075N08NS5, ensuring a seamless and reliable design transition.
Diversified Supply Chain: Sourcing from a leading Chinese manufacturer like VBsemi mitigates risks associated with single-source dependency, offering protection against geopolitical uncertainties and supply shortages.
Cost-Effective Solution: Competitive pricing enhances your bill of materials (BOM) cost efficiency, improving your product's market competitiveness without sacrificing quality or performance.
Conclusion: The Intelligent Choice for Advanced Power Design
VBsemi’s VBGQF1806 is more than an alternative—it is a forward-looking component for the global market. It delivers the proven, high-frequency performance required to confidently replace the BSZ075N08NS5, while adding the strategic advantage of a resilient, diversified supply chain.
For your next-generation DC/DC converters, synchronous rectifiers, or compact high-power designs, choosing the VBGQF1806 is not merely about finding a substitute—it's about upgrading to a smarter, more sustainable solution.