In the design of high-efficiency power systems, selecting the optimal MOSFET involves balancing voltage rating, current handling, switching performance, and thermal management. This analysis uses two benchmark MOSFETs from Vishay—the high-voltage SUM90220E-GE3 and the compact SIR426DP-T1-GE3—to evaluate their design cores and applications, and compares them with domestic alternatives VBGL1201N and VBQA1405. By clarifying parameter differences and performance orientations, we provide a clear selection map for your next power switching solution.
Comparative Analysis: SUM90220E-GE3 (N-channel) vs. VBGL1201N
Analysis of the Original Model (SUM90220E-GE3) Core:
This is a 200V N-channel ThunderFET MOSFET from Vishay in a TO-263 (D2PAK) package. Its design focuses on high-voltage, high-current applications with robust performance. Key advantages include a high continuous drain current of 64A, an on-resistance of 21.6mΩ at 10V, and a low RDS-Qg figure of merit (FOM) for efficient switching. It features a maximum junction temperature of 175°C and is 100% tested for Rg and UIS reliability.
Compatibility and Differences of the Domestic Alternative (VBGL1201N):
VBsemi’s VBGL1201N is a direct alternative in the same TO-263 package. It offers significant performance enhancements: a lower on-resistance of 11mΩ at 10V and a higher continuous current rating of 100A, while maintaining the same 200V voltage rating. This results in reduced conduction losses and improved thermal performance.
Key Application Areas:
- Original Model SUM90220E-GE3: Ideal for high-voltage, high-current applications such as synchronous rectification in server/telecom power supplies, industrial power systems, and high-power DC-DC converters where reliability and efficiency are critical.
- Alternative Model VBGL1201N: Suited for upgraded scenarios demanding lower conduction losses and higher current capability, such as high-density power supplies, motor drives, and energy storage systems requiring enhanced performance margins.
Comparative Analysis: SIR426DP-T1-GE3 (N-channel) vs. VBQA1405
Analysis of the Original Model (SIR426DP-T1-GE3) Core:
This 40V N-channel MOSFET from Vishay uses a compact PowerPAK-SO-8 package. It balances performance and size with a continuous drain current of 30A and an on-resistance of 10.5mΩ at 10V (12.5mΩ at 4.5V). Its design targets efficient power management in space-constrained applications.
Compatibility and Differences of the Domestic Alternative (VBQA1405):
VBsemi’s VBQA1405 offers a performance-enhanced alternative in a DFN8 (5x6) package. It features a significantly lower on-resistance of 4.7mΩ at 10V (6mΩ at 4.5V) and a higher continuous current rating of 70A, while maintaining the same 40V voltage rating. This enables lower losses and higher power density.
Key Application Areas:
- Original Model SIR426DP-T1-GE3: Excellent for medium-power applications requiring compact size and good efficiency, such as DC-DC conversion in 12V/24V systems, motor control, and load switching in automotive or industrial electronics.
- Alternative Model VBQA1405: Ideal for applications demanding ultra-low on-resistance and high current handling, such as high-efficiency synchronous buck converters, advanced motor drives, and power tools where thermal performance and efficiency are prioritized.
Conclusion:
This comparison reveals two distinct selection paths:
- For high-voltage, high-current applications, the original SUM90220E-GE3 provides reliable performance with 64A current and 21.6mΩ on-resistance, suitable for robust power systems. Its domestic alternative VBGL1201N offers enhanced performance with 100A current and 11mΩ on-resistance, enabling upgrades for higher efficiency and power density.
- For compact, medium-power applications, the original SIR426DP-T1-GE3 balances size and performance with 30A current and 10.5mΩ on-resistance. The domestic alternative VBQA1405 delivers superior performance with 70A current and 4.7mΩ on-resistance, catering to designs requiring lower losses and higher output.
The core insight: Selection depends on precise requirement matching. Domestic alternatives not only provide reliable backups but also offer performance enhancements in key parameters, giving engineers greater flexibility in design trade-offs, cost control, and supply chain resilience. Understanding each device’s design philosophy and parametric implications is essential to maximizing circuit performance.