In power design, choosing the right MOSFET involves balancing voltage, current, on-resistance, and package to achieve optimal performance and reliability. This analysis compares two established MOSFETs—SUM60N10-17-E3 (N-channel) and IRFD014PBF (N-channel)—with their domestic alternatives, VBL1101N and VBGC1695. By examining their key parameters and design focus, we provide a clear selection guide for efficient power switching solutions.
Comparative Analysis: SUM60N10-17-E3 (N-channel) vs. VBL1101N
Analysis of the Original Model (SUM60N10-17-E3) Core:
This is a 100V N-channel MOSFET from VISHAY in a TO-263 (D2PAK) package. It is designed for high-current applications with robust thermal performance. Key advantages include a high continuous drain current of 60A and a low on-resistance of 19mΩ at 6V gate drive, ensuring minimal conduction loss in power circuits.
Compatibility and Differences of the Domestic Alternative (VBL1101N):
VBsemi’s VBL1101N is a direct alternative in the same TO-263 package. It offers similar voltage rating (100V) but enhances current handling to 100A. Its on-resistance is lower at 10mΩ (at 10V), providing improved efficiency and thermal performance over the original.
Key Application Areas:
- Original Model SUM60N10-17-E3: Ideal for high-current switching in industrial power supplies, motor drives, and DC-DC converters where 60A capability and 100V rating are required.
- Alternative Model VBL1101N: Suited for upgraded designs demanding higher current (up to 100A) and lower conduction loss, such as high-power SMPS, inverters, or server power systems.
Comparative Analysis: IRFD014PBF (N-channel) vs. VBGC1695
Analysis of the Original Model (IRFD014PBF) Core:
This 60V N-channel MOSFET from VISHAY uses an HVMDIP-4 package. It emphasizes cost-effective, fast switching with a robust design. Key features include a 1.7A continuous current, 200mΩ on-resistance at 10V, and a compact DIP format suitable for machine insertion and stacking.
Compatibility and Differences of the Domestic Alternative (VBGC1695):
VBsemi’s VBGC1695 is a pin-to-pin alternative in DIP8 package. It matches the 60V rating but offers higher current handling (2.5A) and lower on-resistance (100mΩ at 10V), enhancing switching efficiency and thermal dissipation.
Key Application Areas:
- Original Model IRFD014PBF: Optimal for low-power applications like relay drivers, small motor control, or power management modules where cost and compact DIP packaging are critical.
- Alternative Model VBGC1695: Better for designs requiring improved current capacity and lower on-resistance, such as embedded power switches, automotive controls, or upgraded low-power converters.
Conclusion:
This comparison highlights two distinct selection paths:
- For high-current, high-voltage applications, the original SUM60N10-17-E3 provides reliable 60A/100V performance, while its alternative VBL1101N offers superior current (100A) and lower on-resistance for enhanced efficiency.
- For cost-sensitive, low-power switching, the original IRFD014PBF delivers a balanced mix of fast switching and economy, whereas VBGC1695 upgrades key parameters like current and on-resistance for better performance.
The core takeaway: Selection depends on precise requirement matching. Domestic alternatives like VBL1101N and VBGC1695 not only provide compatible replacements but also enable performance upgrades, offering engineers flexible options for design optimization and supply chain resilience.