In modern power design, selecting the optimal MOSFET requires balancing high-voltage handling, current capacity, and integration in space-constrained circuits. This analysis uses two representative MOSFETs from VISHAY—the high-power SIR610DP-T1-RE3 (N-channel) and the integrated dual-channel SIA519EDJ-T1-GE3 (N+P)—as benchmarks. We will evaluate their domestic alternatives, VBQA1204N and VBQG5325, clarifying parameter differences and performance orientations to provide a clear selection guide for your next design.
Comparative Analysis: SIR610DP-T1-RE3 (N-channel) vs. VBQA1204N
Analysis of the Original Model (SIR610DP-T1-RE3) Core:
This is a 200V N-channel MOSFET from VISHAY in a PowerPAK-SO-8 package. Its design focuses on robust high-voltage switching with high current capability. Key advantages include a high continuous drain current of 35.4A and a low on-resistance of 31.9mΩ at 10V gate drive. This combination ensures efficient power handling and minimal conduction loss in demanding applications.
Compatibility and Differences of the Domestic Alternative (VBQA1204N):
VBsemi's VBQA1204N is offered in a compact DFN8(5x6) package and serves as a functional alternative. While it matches the 200V voltage rating, key differences exist: VBQA1204N has a slightly lower continuous current rating of 30A and a moderately higher on-resistance of 38mΩ at 10V. This makes it a suitable alternative where the full 35A+ current of the original is not strictly required, but a smaller footprint is beneficial.
Key Application Areas:
Original Model SIR610DP-T1-RE3: Ideal for high-current, high-voltage switching applications such as:
Power supplies and inverters (e.g., 48V systems).
Motor drives and industrial controls.
High-power DC-DC converters requiring low RDS(on) at high voltage.
Alternative Model VBQA1204N: Suited for applications needing 200V withstand voltage and up to 30A current in a more compact form factor, such as:
Space-constrained power modules.
Designs where thermal management can accommodate the slightly higher RDS(on).
Comparative Analysis: SIA519EDJ-T1-GE3 (Dual N+P Channel) vs. VBQG5325
This dual N+P channel MOSFET pair is designed for compact, integrated power management where both high-side and low-side switching are needed in minimal space.
Analysis of the Original Model (SIA519EDJ-T1-GE3) Core:
VISHAY's SIA519EDJ-T1-GE3 integrates a 20V N-channel and a 20V P-channel MOSFET in a tiny PowerPAK-SC-70-6 package. Its core advantages are integration and protected switching. It offers a 4.5A continuous current per channel, an on-resistance of 137mΩ (N-channel) at 2.5V gate drive, and includes robust ESD protection (2000V for N-channel, 1000V for P-channel), making it reliable for signal-level power switching.
Compatibility and Differences of the Domestic Alternative (VBQG5325):
VBsemi's VBQG5325 is a direct pin-to-pin compatible alternative in a DFN6(2x2)-B package. It offers significant performance enhancement in key parameters: a higher voltage rating of ±30V, a higher continuous current of ±7A per channel, and dramatically lower on-resistance (e.g., 18mΩ for N-channel @10V vs. the original's 137mΩ @2.5V). This translates to much lower conduction losses and higher power handling capability.
Key Application Areas:
Original Model SIA519EDJ-T1-GE3: Perfect for space-critical, lower-current integrated switching with ESD protection, such as:
Load switches and power multiplexing in portable devices.
Battery management system (BMS) circuits.
Interface and signal line power control.
Alternative Model VBQG5325: An excellent upgrade for applications requiring higher voltage margin, higher current capacity, and significantly lower RDS(on) in the same ultra-compact footprint. Ideal for:
More demanding power path management.
Compact motor drivers or H-bridge circuits.
High-efficiency, miniaturized DC-DC converters.
Conclusion
This comparison reveals two distinct selection strategies:
1. For high-voltage, high-current single N-channel applications, the original SIR610DP-T1-RE3 offers superior current handling (35.4A) and very low on-resistance. The alternative VBQA1204N provides a viable, more compact option for designs where the current requirement is around 30A.
2. For compact dual N+P channel applications, the original SIA519EDJ-T1-GE3 provides reliable, ESD-protected switching for lower-current paths. In contrast, the domestic alternative VBQG5325 stands out as a performance-enhanced solution, offering higher voltage/current ratings and drastically lower on-resistance, enabling higher efficiency and power density in the same package size.
The core takeaway is that selection depends on precise requirement matching. Domestic alternatives like VBQA1204N and VBQG5325 not only offer supply chain resilience but also provide compelling trade-offs—from footprint reduction to significant performance gains—giving engineers greater flexibility in design optimization and cost control.