In modern power design, selecting the optimal MOSFET involves balancing performance, size, cost, and supply chain stability. This analysis uses two representative MOSFETs—SIR165DP-T1-GE3 (P-channel) and SI4848DY-T1-E3 (N-channel)—as benchmarks, evaluating their domestic alternatives VBQA2305 and VBA1158N. By comparing key parameters and application orientations, we provide a clear selection guide for your next power switching solution.
Comparative Analysis: SIR165DP-T1-GE3 (P-channel) vs. VBQA2305
Original Model (SIR165DP-T1-GE3) Core Analysis:
This Vishay P-channel MOSFET in PowerPAK SO-8 package features a 30V drain-source voltage and continuous drain current of 25.9A. Its design focuses on high efficiency and reliability in power switching. Key advantages include a low on-resistance of 4.6mΩ at 10V/15A, belonging to the TrenchFET Gen II series with industry-leading RDS(on) performance (as of Nov 2017). It is 100% tested for Rg and UIS, ensuring robustness.
Domestic Alternative (VBQA2305) Compatibility and Differences:
VBsemi’s VBQA2305 in DFN8 (5x6) package is a pin-to-pin compatible alternative. It offers similar voltage rating (-30V) but enhances on-resistance performance: 6mΩ at 4.5V and 4mΩ at 10V. With a high continuous current rating of -120A, it provides superior current handling in a compact footprint.
Key Application Areas:
- Original SIR165DP-T1-GE3: Ideal for adapter and charger switching, load switches, and other applications requiring reliable 30V P-channel switching with moderate current (up to 25.9A).
- Alternative VBQA2305: Suited for high-current P-channel applications where lower on-resistance and higher current capability (up to 120A) are critical, such as high-efficiency power switches in compact designs.
Comparative Analysis: SI4848DY-T1-E3 (N-channel) vs. VBA1158N
Original Model (SI4848DY-T1-E3) Core Analysis:
This Vishay N-channel MOSFET in SO-8 package is designed for higher voltage applications with 150V drain-source voltage and 2.7A continuous current. It features an on-resistance of 85mΩ at 10V/3.5A, offering a balance of voltage endurance and switching performance for medium-power circuits.
Domestic Alternative (VBA1158N) Compatibility and Differences:
VBsemi’s VBA1158N in SOP8 package is a direct alternative with similar 150V rating. It improves on-resistance to 80mΩ at 10V and increases continuous current to 5.4A, providing better conduction loss and higher current capacity in the same package.
Key Application Areas:
- Original SI4848DY-T1-E3: Suitable for N-channel applications up to 150V, such as power supplies, motor drives, or switching circuits requiring 2.7A continuous current.
- Alternative VBA1158N: Ideal for upgrades where higher current (5.4A) and lower on-resistance (80mΩ) are needed for improved efficiency in 150V systems, like enhanced power converters or motor controls.
Conclusion:
This comparison highlights two selection paths:
- For P-channel applications, the original SIR165DP-T1-GE3 offers reliable 30V/25.9A performance with low RDS(on), while VBQA2305 provides a high-current alternative with even lower on-resistance for demanding compact designs.
- For N-channel higher-voltage applications, SI4848DY-T1-E3 serves 150V/2.7A needs, whereas VBA1158N delivers upgraded current handling and reduced conduction losses.
Selection depends on precise requirement matching. Domestic alternatives like VBQA2305 and VBA1158N not only offer compatible backups but also enable performance enhancements, giving engineers flexible, cost-effective options in power design trade-offs.