In high-power and high-voltage circuit designs, selecting MOSFETs that deliver both robust performance and high reliability is a critical engineering challenge. It involves careful balancing of voltage rating, current handling, switching efficiency, and thermal management. This article uses two high-performance MOSFETs from VISHAY—SIR104LDP-T1-RE3 (N-channel) and SI4455DY-T1-E3 (P-channel)—as benchmarks. We will deeply analyze their design cores and application scenarios, and provide a comparative evaluation of two domestic alternative solutions: VBQA1105 and VBA2152M. By clarifying parameter differences and performance orientations, this aims to offer a clear selection guide for your next high-performance power switching design.
Comparative Analysis: SIR104LDP-T1-RE3 (N-channel) vs. VBQA1105
Analysis of the Original Model (SIR104LDP-T1-RE3) Core:
This is a 100V N-channel TrenchFET Gen IV power MOSFET from VISHAY in a PowerPAK® SO-8 package. Its design core focuses on achieving an exceptional balance between very low conduction loss and fast switching performance. Key advantages include: an ultra-low on-resistance of 7.7mΩ at 4.5V gate drive, a high continuous drain current rating of 81A, and optimization for the lowest RDS(on) × Qg and RDS(on) × Qoss figures of merit (FOM). It is 100% tested for gate resistance (Rg) and unclamped inductive switching (UIS), ensuring high reliability.
Compatibility and Differences of the Domestic Alternative (VBQA1105):
VBsemi's VBQA1105 is an N-channel MOSFET in a DFN8(5x6) package. While the package differs, it serves as a functional performance alternative. Its key electrical parameters show competitive enhancements: the same 100V voltage rating, a slightly lower on-resistance of 6mΩ at 4.5V (5mΩ at 10V), and a higher continuous current rating of 100A.
Key Application Areas:
Original Model SIR104LDP-T1-RE3: Its combination of very low RDS(on), high current capability, and optimized FOM makes it ideal for high-efficiency, high-current applications.
Synchronous Rectification: In high-power SMPS (e.g., server, telecom power supplies).
Primary-Side Switching: In isolated DC-DC converters.
Alternative Model VBQA1105: With its lower on-resistance and higher current rating, it is suitable for demanding upgrade scenarios requiring even lower conduction losses and higher power density in similar 100V applications, such as next-generation high-efficiency power converters.
Comparative Analysis: SI4455DY-T1-E3 (P-channel) vs. VBA2152M
Analysis of the Original Model (SI4455DY-T1-E3) Core:
This is a 150V P-channel TrenchFET power MOSFET from VISHAY in a standard SO-8 package. It is designed for high-voltage side switching applications. Its core advantages are a high drain-source voltage rating of 150V and a moderate on-resistance of 295mΩ at 10V gate drive for a 4A device. It is also 100% tested for Rg and UIS, offering reliable performance in demanding circuits.
Compatibility and Differences of the Domestic Alternative (VBA2152M):
VBsemi's VBA2152M is a P-channel MOSFET in an SOP8 package, offering direct pin-to-pin compatibility. It provides a significant performance enhancement in key parameters: the same -150V voltage rating, a substantially lower on-resistance of 200mΩ at 4.5V (160mΩ at 10V), and a continuous current rating of -2.8A.
Key Application Areas:
Original Model SI4455DY-T1-E3: Suited for high-voltage P-channel switching where simplicity of drive (no bootstrap circuit needed) is valued.
Active Clamp: In intermediate bus DC-DC power supplies.
High-Side Switch: In H-bridge configurations for lighting applications.
Alternative Model VBA2152M: With its significantly lower on-resistance, it is an excellent drop-in replacement for reducing conduction losses and improving efficiency in existing 150V P-channel designs, or for new designs requiring better performance within the same footprint.
Conclusion:
In summary, this analysis reveals clear selection and upgrade paths:
For high-current, 100V N-channel applications, the original SIR104LDP-T1-RE3 sets a high standard with its 7.7mΩ RDS(on), 81A current rating, and optimized FOMs, making it a top choice for synchronous rectification and primary-side switching. The domestic alternative VBQA1105 presents a compelling "performance-enhanced" option, featuring even lower resistance (6mΩ) and higher current (100A), suitable for next-generation designs demanding maximum efficiency and power density.
For 150V P-channel high-side switching applications, the original SI4455DY-T1-E3 provides a reliable solution. Its domestic alternative VBA2152M offers a direct pin-to-pin compatible upgrade with dramatically lower on-resistance, enabling improved efficiency and thermal performance in active clamp circuits, H-bridges, and other high-voltage side control applications.
The core takeaway is that selection hinges on precise requirement matching. In the context of supply chain diversification, these domestic alternatives not only provide reliable backup options but also deliver parameter advancements, offering engineers greater flexibility in design optimization and cost-performance trade-offs.