In medium-voltage power circuit design, selecting MOSFETs that balance voltage rating, current capability, and switching performance is critical for reliability and efficiency. This article takes two representative MOSFETs—SI7469DP-T1-GE3 (P-channel) and SI7810DN-T1-GE3 (N-channel)—as benchmarks, analyzes their design focus and application scenarios, and evaluates their domestic alternatives, VBQA2625 and VBQF1104N. By comparing parameter differences and performance orientations, we provide a clear selection guide to help you find the optimal power switching solution.
Comparative Analysis: SI7469DP-T1-GE3 (P-channel) vs. VBQA2625
Analysis of the Original Model (SI7469DP-T1-GE3) Core:
This is an 80V P-channel MOSFET from VISHAY in a PowerPAK SO-8 package. Its design emphasizes robust performance in medium-voltage applications. Key advantages include a continuous drain current of 28A and an on-resistance of 25mΩ at 10V gate drive. It features halogen-free construction compliant with IEC 61249-2-21, making it suitable for environmentally sensitive designs. The TrenchFET technology ensures low conduction loss and reliable switching.
Compatibility and Differences of the Domestic Alternative (VBQA2625):
VBsemi’s VBQA2625 is a P-channel alternative in a compact DFN8 (5x6) package. While not pin-to-pin identical in footprint, it serves as a functional substitute in many circuits. Key parameter comparisons:
- Voltage Rating: VBQA2625 is rated -60V (vs. -80V for SI7469DP), sufficient for many 48V or lower systems.
- Current Capability: VBQA2625 offers -36A continuous current, surpassing the original’s 28A.
- On-Resistance: VBQA2625 achieves 21mΩ at 10V gate drive, lower than the original’s 25mΩ, promising reduced conduction loss.
- Gate Threshold: VBQA2625 has a -1.7V typical threshold, suitable for standard logic-level drive.
Key Application Areas:
- Original Model SI7469DP-T1-GE3: Ideal for 48V–80V systems requiring high-current switching, such as industrial power supplies, telecom DC-DC converters, and high-side load switches in automotive or motor control applications.
- Alternative Model VBQA2625: Best suited for applications up to 60V where higher current capability and lower on-resistance are prioritized, such as compact power modules, battery management systems (BMS), or medium-voltage DC-DC conversion with enhanced efficiency.
Comparative Analysis: SI7810DN-T1-GE3 (N-channel) vs. VBQF1104N
Analysis of the Original Model (SI7810DN-T1-GE3) Core:
This 100V N-channel MOSFET from VISHAY comes in a PowerPAK 1212-8 package, targeting medium-voltage, moderate-current applications. Its strengths include a 100V drain-source voltage rating and an on-resistance of 84mΩ at 6V gate drive. With a continuous current of 5.4A, it is designed for applications where voltage withstand and compact power handling are key.
Compatibility and Differences of the Domestic Alternative (VBQF1104N):
VBsemi’s VBQF1104N is an N-channel alternative in a small DFN8 (3x3) package. It represents a significant performance upgrade in several aspects:
- Voltage Rating: Matches the original at 100V.
- Current Capability: VBQF1104N supports up to 21A continuous current, vastly higher than the original’s 5.4A.
- On-Resistance: VBQF1104N offers 36mΩ at 10V gate drive, substantially lower than the original’s 84mΩ, leading to much lower conduction losses.
- Switching Performance: With Trench technology, it ensures fast switching suitable for high-frequency applications.
Key Application Areas:
- Original Model SI7810DN-T1-GE3: Suitable for 100V systems with moderate current needs, such as auxiliary power switches, LED drivers, or low-power motor drives in industrial and automotive contexts.
- Alternative Model VBQF1104N: Excellent for applications demanding high current, low loss, and compact size at 100V, including high-efficiency DC-DC converters, motor drives with higher power, and power distribution switches in communication equipment.
Conclusion
This comparison highlights two distinct selection paths:
For P-channel applications in the 48V–80V range, the original SI7469DP-T1-GE3 offers a proven solution with 80V rating and 28A current capability, ideal for industrial and telecom power systems. Its domestic alternative VBQA2625, while rated slightly lower at 60V, provides higher current (36A) and lower on-resistance (21mΩ), making it a strong candidate for designs prioritizing efficiency and current capacity within 60V.
For N-channel applications around 100V, the original SI7810DN-T1-GE3 serves well in moderate-current scenarios. The domestic alternative VBQF1104N delivers dramatic performance enhancement with 21A current capability and 36mΩ on-resistance, enabling higher power density and lower losses in advanced DC-DC, motor drive, and power management circuits.
The core insight: Selection depends on precise requirement matching. Domestic alternatives like VBQA2625 and VBQF1104N not only provide reliable supply chain options but also offer performance advantages in key parameters, giving engineers greater flexibility in design trade-offs and cost optimization. Understanding each device’s design focus and parameter implications is essential to maximize circuit performance and reliability.