In modern power design, selecting the right MOSFET involves balancing performance, size, and cost. This article compares two established MOSFETs—SI7336ADP-T1-GE3 (N-channel) and SI7465DP-T1-E3 (P-channel)—with their Chinese alternatives, VBQA1303 and VBQA2625, to provide a clear selection guide.
Comparative Analysis: SI7336ADP-T1-GE3 (N-channel) vs. VBQA1303
Analysis of the Original Model (SI7336ADP-T1-GE3) Core:
This Vishay N-channel MOSFET in a PowerPAK-SO-8 package is designed for high-efficiency, medium-power applications. Its key strengths are a low on-resistance of 4mΩ at 4.5V (19A) and 3mΩ at 10V, with a continuous drain current rating of 30A at 30V. This combination ensures minimal conduction loss and robust current handling in space-constrained designs.
Compatibility and Differences of the Domestic Alternative (VBQA1303):
VBsemi's VBQA1303, in a DFN8 (5x6) package, offers similar voltage (30V) and enhanced current capability (120A). Its on-resistance is slightly higher at 5mΩ (4.5V) but lower at 3mΩ (10V), providing competitive switching performance and lower drive loss at higher gate voltages.
Key Application Areas:
Original Model SI7336ADP-T1-GE3: Ideal for synchronous rectification in DC-DC converters (12V/24V systems), motor drives, and high-current load switches where low RDS(on) and 30A current are critical.
Alternative Model VBQA1303: Suited for upgraded designs requiring higher current capacity (up to 120A) and efficient switching, such as high-power POL converters, server power modules, or automotive systems.
Comparative Analysis: SI7465DP-T1-E3 (P-channel) vs. VBQA2625
Analysis of the Original Model (SI7465DP-T1-E3) Core:
This Vishay P-channel MOSFET uses a low-profile PowerPAK SO-8 package (1.07mm height). Rated for -60V and -5A, it features an on-resistance of 80mΩ at 4.5V, targeting applications needing compact size and moderate power switching with good thermal performance.
Compatibility and Differences of the Domestic Alternative (VBQA2625):
VBQA2625, in a DFN8 (5x6) package, offers a higher voltage rating (-60V) and significantly higher continuous current (-36A). Its on-resistance is lower at 28.8mΩ (4.5V) and 21mΩ (10V), providing better conduction efficiency and thermal handling in similar form factors.
Key Application Areas:
Original Model SI7465DP-T1-E3: Fits -60V system load switches, battery protection circuits, and power management in portable devices where low profile and -5A current are sufficient.
Alternative Model VBQA2625: Targets applications demanding higher current (up to -36A) and lower loss, such as high-side switches in industrial power systems, telecom rectifiers, or advanced battery management.
Conclusion:
For N-channel needs, the original SI7336ADP-T1-GE3 excels in 30V/30A applications with very low RDS(on), while VBQA1303 offers a high-current (120A) alternative for more demanding designs. For P-channel needs, SI7465DP-T1-E3 is a compact solution for -60V/-5A tasks, and VBQA2625 provides enhanced performance with -36A current and lower RDS(on). Domestic alternatives like VBQA1303 and VBQA2625 deliver viable, performance-competitive options, giving engineers greater flexibility in cost and supply chain management without compromising on key parameters.