In modern power design, selecting the right dual MOSFET for space-constrained and efficiency-critical applications is a key challenge. This involves balancing performance, integration, cost, and supply chain stability. This article takes two representative dual MOSFETs—SI4564DY-T1-GE3 (N+P-channel) and SI9634DY-T1-GE3 (Dual N-channel)—as benchmarks, analyzes their design focus and application scenarios, and evaluates the domestic alternative solutions VBA5415 and VBA3615. By comparing parameter differences and performance orientations, we provide a clear selection guide to help you find the optimal power switching solution.
Comparative Analysis: SI4564DY-T1-GE3 (N+P-Channel) vs. VBA5415
Analysis of the Original Model (SI4564DY-T1-GE3) Core:
This is a 40V N+P-channel TrenchFET MOSFET from VISHAY in an SO-8 package. Its design core is to provide a compact, halogen-free dual-MOSFET solution for power management. Key advantages include: a continuous drain current of 10A, on-resistance of 28mΩ@4.5V, and a threshold voltage of 2.5V. It is 100% tested for Rg and UIS, ensuring reliability in demanding applications.
Compatibility and Differences of the Domestic Alternative (VBA5415):
VBsemi's VBA5415 is also an SO-8 packaged dual N+P-channel MOSFET, offering pin-to-pin compatibility. The key differences are in electrical parameters: VBA5415 provides a higher voltage rating (±40V for N-channel, ±20V for P-channel) and lower on-resistance (18mΩ for N-channel, 22mΩ for P-channel @4.5V). It also supports a higher continuous current of 9A (N-channel) and -8A (P-channel), offering improved conduction performance.
Key Application Areas:
Original Model SI4564DY-T1-GE3: Ideal for compact power management circuits requiring both N and P-channel switches in 12V-24V systems. Typical applications include:
Notebook PC power management and load switching.
DC-DC converters and power path control.
Alternative Model VBA5415: Suitable for applications requiring higher voltage margins, lower on-resistance, and slightly higher current capability, such as enhanced power management modules or motor drive circuits.
Comparative Analysis: SI9634DY-T1-GE3 (Dual N-Channel) vs. VBA3615
This dual N-channel MOSFET focuses on optimized switching performance and efficiency in synchronous rectification.
Analysis of the Original Model (SI9634DY-T1-GE3) Core:
This is a 60V dual N-channel Gen IV TrenchFET from VISHAY in an SO-8 package. Its design emphasizes low switching loss and reliability. Core advantages include:
Optimized Switching: Designed with low gate charge (Qg) and optimized Qgd/Qgs ratio to minimize switching losses.
Good Conduction: On-resistance of 38mΩ@4.5V with 8A continuous current.
Robustness: 100% Rg and UIS tested, with a power dissipation of 3.6W.
Compatibility and Differences of the Domestic Alternative (VBA3615):
VBsemi's VBA3615 is a direct pin-to-pin compatible dual N-channel alternative in SOP-8 package. It offers significant performance enhancement: same 60V voltage rating but lower on-resistance (15mΩ@4.5V, 12mΩ@10V) and higher continuous current (10A). This translates to lower conduction losses and higher current handling.
Key Application Areas:
Original Model SI9634DY-T1-GE3: Excellent for efficiency-sensitive applications requiring fast switching. Typical uses include:
Synchronous rectification in DC-DC converters (e.g., buck, boost).
Load switches in power systems.
Alternative Model VBA3615: Ideal for upgraded designs demanding lower on-resistance and higher current capacity, such as high-current synchronous rectifiers or motor drives where reduced loss is critical.
Summary
This comparison reveals two distinct selection paths:
For compact N+P-channel applications like notebook PC power management, the original SI4564DY-T1-GE3 offers a reliable, halogen-free solution. Its domestic alternative VBA5415 provides enhanced voltage ratings, lower on-resistance, and higher current, making it a strong upgrade for designs needing improved performance.
For dual N-channel applications focused on switching efficiency, the original SI9634DY-T1-GE3 delivers optimized low-loss performance for synchronous rectification. The alternative VBA3615 significantly outperforms in conduction (lower RDS(on), higher current), making it suitable for higher-power or higher-efficiency designs.
The core conclusion: Selection depends on precise requirement matching. Domestic alternatives like VBA5415 and VBA3615 not only offer reliable compatibility but also provide performance advantages in key parameters, giving engineers flexible, cost-effective options for diversified supply chains and enhanced design resilience.