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MOSFET Selection for Power Applications: SI4116DY-T1-E3, SUP85N10-10-E3 vs. China Alternatives VBA1206, VBM1101N
time:2025-12-29
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Comparative Analysis: SI4116DY-T1-E3 (N-channel) vs. VBA1206
Analysis of the Original Model (SI4116DY-T1-E3) Core:
This is a 25V N-channel MOSFET from VISHAY in a standard SOP-8 package. Its design focuses on providing a robust balance of current handling and low on-resistance in a compact footprint. Key advantages are: a continuous drain current of 18A and an on-resistance of 8.6mΩ at a 10V gate drive. This makes it a reliable choice for medium-current switching applications.
Compatibility and Differences of the Domestic Alternative (VBA1206):
VBsemi's VBA1206 is a pin-to-pin compatible alternative in the same SOP-8 package. The main differences are in electrical parameters: VBA1206 has a slightly lower voltage rating (20V vs 25V) but offers a lower on-resistance of 6mΩ at 4.5V drive. Its continuous current rating is 15A.
Key Application Areas:
Original Model SI4116DY-T1-E3: Suitable for various 12V-24V system applications requiring up to 18A current, such as DC-DC converter switches, motor drives, and load switches in power management units.
Alternative Model VBA1206: An excellent alternative for applications where a slightly lower voltage rating is acceptable, but lower on-resistance at a lower gate drive voltage (4.5V) is beneficial, such as in space-constrained, efficiency-sensitive designs.
Comparative Analysis: SUP85N10-10-E3 (N-channel) vs. VBM1101N
This high-power N-channel MOSFET is designed for applications demanding high current and high voltage capability.
The core advantages of the original model are:
High Power Handling: With a 100V drain-source voltage and a continuous current rating of 85A, it is built for demanding applications.
Low Conduction Loss: It features a very low on-resistance of 12mΩ at 4.5V gate drive (10.5mΩ typical at 10V).
Robust Package: The TO-220AB package provides excellent thermal performance for high-power dissipation.
The domestic alternative VBM1101N is a "high-performance" alternative:
It matches the 100V voltage rating but offers a significantly higher continuous current rating of 100A.
Its on-resistance is competitive at 9mΩ at a 10V gate drive (20mΩ at 4.5V).
Key Application Areas:
Original Model SUP85N10-10-E3: Ideal for high-power applications such as motor drives (e.g., industrial tools, e-bikes), power supplies (e.g., server PSUs, telecom rectifiers), and inverters where 100V/85A capability is required.
Alternative Model VBM1101N: Suited for upgrade scenarios or new designs requiring even higher current capability (100A) within the same 100V range, potentially offering lower conduction losses in high-current paths, such as in advanced motor controllers or high-density power converters.
In summary, this analysis presents two distinct replacement paths:
For the medium-power SOP-8 N-channel application, the original SI4116DY-T1-E3 offers a proven 25V/18A solution. Its domestic alternative VBA1206 provides a compelling option with lower RDS(on) at 4.5V drive, making it suitable for designs prioritizing efficiency with a slightly lower voltage requirement.
For the high-power TO-220 N-channel application, the original SUP85N10-10-E3 is a workhorse for 100V/85A applications. The domestic alternative VBM1101N pushes the boundaries further with a 100A current rating, offering a performance-enhanced choice for the most demanding circuits.
The core conclusion remains: selection is about precise requirement matching. These domestic alternatives provide viable, and in some parameters superior, options, enhancing supply chain resilience and offering engineers greater flexibility in design and cost optimization.
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