In the design of power circuits requiring robust performance and cost-effectiveness, selecting the right MOSFET is a critical engineering decision. It involves balancing voltage rating, current handling, switching efficiency, and thermal management. This article takes two established MOSFETs from VISHAY—IRLD024PBF (N-channel) and IRFP17N50LPBF (N-channel)—as benchmarks. We will delve into their design cores and typical applications, then conduct a comparative evaluation with two domestic alternative solutions: VBGC1695 and VBP15R50S. By clarifying parameter differences and performance orientations, we aim to provide a clear selection guide for your next power switching design.
Comparative Analysis: IRLD024PBF (N-channel) vs. VBGC1695
Analysis of the Original Model (IRLD024PBF) Core:
This is a 60V N-channel MOSFET from VISHAY in a cost-effective HVMDIP-4 package. Its design core is to offer an optimal combination of fast switching, ruggedness, low on-resistance, and cost. Key advantages include: an on-resistance (RDS(on)) of 140mΩ at 4V gate drive, a continuous drain current (Id) of 2.5A, and a dual-drain design that serves as a thermal connection to the mounting surface for power dissipation up to 1W. The 4-pin DIP package is machine-insertable and stackable, making it suitable for standard board layouts.
Compatibility and Differences of the Domestic Alternative (VBGC1695):
VBsemi's VBGC1695 is offered in a DIP8 package. While the package differs, it serves as a functional alternative for 60V N-channel applications. The key electrical differences are: VBGC1695 features a lower on-resistance of 120mΩ @ 4.5V and 100mΩ @ 10V, while maintaining the same 2.5A continuous current rating as the original. This indicates potentially lower conduction losses.
Key Application Areas:
Original Model IRLD024PBF: Ideal for cost-sensitive, low-to-medium power applications requiring reliable 60V switching. Typical uses include:
Low-power switch-mode power supplies (SMPS).
DC-DC converter circuits.
Motor drives for small appliances.
General-purpose switching and amplification where the stackable DIP package is advantageous.
Alternative Model VBGC1695: Suitable for applications where improved efficiency (lower RDS(on)) is desired within the same 60V/2.5A range, potentially in designs that can accommodate a DIP8 footprint.
Comparative Analysis: IRFP17N50LPBF (N-channel) vs. VBP15R50S
This comparison shifts to higher voltage and power territory. The design pursuit here is high-voltage blocking capability coupled with low conduction loss.
Analysis of the Original Model (IRFP17N50LPBF) Core:
This is a robust 500V N-channel MOSFET in a TO-247AC package. Its core advantages are:
High Voltage Rating: A drain-source voltage (Vdss) of 500V makes it suitable for off-line and high-voltage DC applications.
Substantial Current Handling: A continuous drain current (Id) of 16A.
Low On-Resistance: RDS(on) is 280mΩ at 10V gate drive, contributing to reduced power loss in the on-state.
Proven Package: The TO-247AC package offers excellent thermal performance for power dissipation.
The domestic alternative VBP15R50S represents a significant "performance-enhanced" choice: It matches the 500V voltage rating but offers substantially improved key parameters: a much higher continuous current of 50A and a dramatically lower on-resistance of 80mΩ (@10V). This indicates superior current-handling capability and significantly reduced conduction losses.
Key Application Areas:
Original Model IRFP17N50LPBF: A reliable workhorse for 500V, medium-current applications. Typical uses include:
Switch-mode power supplies (SMPS) for industrial equipment.
Power factor correction (PFC) stages.
Motor drives and inverters.
UPS and welding equipment power stages.
Alternative Model VBP15R50S: Ideal for upgraded or new designs demanding higher efficiency and greater power density. It is exceptionally suited for:
High-current output SMPS and server power supplies.
High-power motor drives and industrial inverters.
Applications where lower RDS(on) directly translates to cooler operation and higher system efficiency.
Conclusion:
In summary, this analysis reveals two distinct selection scenarios:
For 60V-level, cost-effective N-channel applications, the original IRLD024PBF, with its proven DIP package and balanced performance, remains a strong choice for standard designs. Its domestic alternative, VBGC1695, offers a compelling advantage in lower on-resistance for improved efficiency, making it a viable option for efficiency-focused upgrades within similar voltage/current specs.
For 500V-level, higher-power N-channel applications, the original IRFP17N50LPBF is a dependable solution with a solid performance history. However, the domestic alternative VBP15R50S delivers a remarkable performance leap with its 50A current rating and ultra-low 80mΩ RDS(on), positioning it as a superior choice for next-generation designs prioritizing high efficiency, high current capability, and reduced thermal stress.
The core takeaway is that selection is driven by precise application requirements. In the landscape of supply chain diversification, domestic alternatives like VBGC1695 and VBP15R50S not only provide reliable backup options but also demonstrate significant parameter advancements in key areas. This offers engineers greater flexibility, performance headroom, and cost-control potential in their design trade-offs. A deep understanding of each device's specifications is paramount to unlocking its full value within your circuit.