In power design, balancing switching performance, thermal management, and cost is a critical challenge. This article takes two established MOSFETs—IRFI644GPBF (N-channel) and SISS5623DN-T1-GE3 (P-channel)—as benchmarks, analyzing their design focus and application fit. We then evaluate two domestic alternatives, VBMB1252M and VBQF2625, providing a clear comparison to help you select the optimal power switching solution for your next project.
Comparative Analysis: IRFI644GPBF (N-channel) vs. VBMB1252M
Analysis of the Original Model (IRFI644GPBF) Core:
This is a 250V N-channel MOSFET from VISHAY in a TO-220F-3 package. Its design core is to offer a cost-effective combination of fast switching, ruggedness, and low thermal resistance for commercial-industrial applications. The TO-220 FULLPAK provides built-in isolation between the heatsink tab and an external heatsinker, eliminating the need for additional insulation hardware. Key parameters include a continuous drain current of 7.9A and an on-resistance of 280mΩ @ 10V.
Compatibility and Differences of the Domestic Alternative (VBMB1252M):
VBsemi's VBMB1252M is a direct pin-to-pin compatible alternative in the TO220F package. It offers significant performance enhancement in key electrical parameters: a lower on-resistance of 200mΩ @ 10V and a higher continuous current rating of 16A, while maintaining the same 250V voltage rating.
Key Application Areas:
Original Model IRFI644GPBF: Ideal for cost-sensitive, medium-power industrial applications requiring built-in isolation, such as AC-DC power supplies, motor drives, and general-purpose switching where its 7.9A current capability is sufficient.
Alternative Model VBMB1252M: Better suited for upgraded designs requiring higher current handling (up to 16A) and lower conduction losses, making it a strong candidate for more efficient power supplies, inverters, or replacements seeking performance gains.
Comparative Analysis: SISS5623DN-T1-GE3 (P-channel) vs. VBQF2625
Analysis of the Original Model (SISS5623DN-T1-GE3) Core:
This is a 60V P-channel MOSFET from VISHAY in a compact PowerPAK1212-8S package. It represents a new generation of P-channel technology focused on achieving an excellent RDS(on) × Qg figure of merit. Its core advantages are a high continuous current of 36.3A, an on-resistance of 46mΩ @ 4.5V, and a power dissipation of 56.8W, making it suitable for space-constrained, high-current applications.
Compatibility and Differences of the Domestic Alternative (VBQF2625):
VBsemi's VBQF2625, in a DFN8(3x3) package, serves as a high-performance alternative. It offers a substantially lower on-resistance of 28.8mΩ @ 4.5V (21mΩ @ 10V) while matching the 60V voltage rating and 36A continuous current capability.
Key Application Areas:
Original Model SISS5623DN-T1-GE3: Excellent for high-current load switching and battery management in portable devices, laptops, and power tools where its low RDS(on) and high current in a small package are critical.
Alternative Model VBQF2625: An optimal choice for applications demanding even lower conduction losses and higher efficiency, such as advanced battery protection circuits, high-efficiency DC-DC converters, and power distribution switches.
Conclusion:
This analysis reveals two distinct selection pathways:
For 250V N-channel applications, the domestic alternative VBMB1252M provides a compelling upgrade over the IRFI644GPBF, offering significantly lower on-resistance and higher current capability in the same package for improved efficiency and power handling.
For 60V P-channel applications requiring minimal conduction loss, the domestic alternative VBQF2625 outperforms the SISS5623DN-T1-GE3 with its lower RDS(on), making it a superior choice for high-efficiency, high-current switching tasks.
Domestic alternatives not only offer reliable compatibility but also present opportunities for performance enhancement and supply chain diversification, giving engineers greater flexibility in design optimization and cost management.