In power switching design, selecting a MOSFET that balances performance, cost, and reliability is a key task for engineers. This is not just a simple part substitution, but a careful trade-off among electrical characteristics, package, and supply chain stability. This article takes two classic P-channel MOSFETs—IRF9Z24SPBF (in D2PAK) and SI2365EDS-T1-GE3 (in SOT-23-3)—as benchmarks, analyzes their design focus and application scenarios, and evaluates two domestic alternative solutions, VBL2610N and VB2290. By clarifying parameter differences and performance orientations, we aim to provide a clear selection guide to help you find the most suitable power switching solution in your next design.
Comparative Analysis: IRF9Z24SPBF (P-channel) vs. VBL2610N
Analysis of the Original Model (IRF9Z24SPBF) Core:
This is a 60V P-channel MOSFET from VISHAY in a D2PAK (TO-263) package. Its design core is to provide a robust and reliable power switch with low on-resistance for medium-power applications. Key advantages include: a drain-source voltage (Vdss) of -60V, continuous drain current (Id) of -11A, and an on-resistance (RDS(on)) of 280mΩ at 10V gate drive. It utilizes advanced processing technology for low specific on-resistance, combined with fast switching and a rugged design, making it highly efficient and reliable for a wide range of applications. The D2PAK surface-mount power package offers good thermal performance for chips up to HEX-4 size.
Compatibility and Differences of the Domestic Alternative (VBL2610N):
VBsemi's VBL2610N is also offered in a TO-263 package and serves as a pin-to-pin compatible alternative. The main differences are in electrical parameters: VBL2610N has a similar voltage rating (-60V) but offers a significantly higher continuous drain current of -30A and a much lower on-resistance of 64mΩ at 10V (compared to 280mΩ for the original). This indicates superior current-handling and conduction loss performance.
Key Application Areas:
Original Model IRF9Z24SPBF: Suitable for medium-power switching applications requiring 60V voltage rating and around 11A current, such as power supplies, motor drives, or load switches in industrial and automotive systems where robustness is key.
Alternative Model VBL2610N: With its higher current rating (30A) and lower on-resistance, it is ideal for upgraded or new designs demanding higher efficiency, lower heat generation, and greater current capacity within the same 60V range, potentially replacing the original in more demanding scenarios.
Comparative Analysis: SI2365EDS-T1-GE3 (P-channel) vs. VB2290
Analysis of the Original Model (SI2365EDS-T1-GE3) Core:
This is a 20V P-channel MOSFET from VISHAY in a compact SOT-23-3 package. Its design focuses on efficient power management in space-constrained portable and consumer electronics. Key features include: Vdss of -20V, Id of -5.9A, and a low RDS(on) of 32mΩ at 4.5V gate drive. It is part of the TrenchFET series, offers 100% Rg testing, includes built-in ESD protection (typically 3000V), and is characterized by fast switching.
Compatibility and Differences of the Domestic Alternative (VB2290):
VBsemi's VB2290 is also in a SOT-23-3 package and is a direct pin-to-pin compatible alternative. Key parameter comparisons: VB2290 has the same voltage rating (-20V) but a slightly lower continuous current rating of -4A (vs. -5.9A for the original). Its on-resistance is 65mΩ at 4.5V (vs. 32mΩ), indicating a trade-off where the alternative may have higher conduction losses but remains viable for lower-current applications.
Key Application Areas:
Original Model SI2365EDS-T1-GE3: Excellent for space-constrained applications requiring good current handling and low on-resistance, such as load switches, power management, and battery protection circuits in portable devices, consumer electronics, and IoT modules.
Alternative Model VB2290: A suitable domestic alternative for applications where the full 5.9A current of the original is not required, and where cost or supply chain considerations are prioritized. It can serve in similar load switching and power management roles within its -4A current limit.
Conclusion:
This comparison reveals two distinct substitution strategies:
1. For the medium-power, 60V P-channel MOSFET (IRF9Z24SPBF), the domestic alternative VBL2610N offers a performance-enhanced option with significantly higher current capability (30A vs. 11A) and lower on-resistance (64mΩ vs. 280mΩ), making it an attractive upgrade for designs seeking higher efficiency and power density within the same voltage class and package.
2. For the compact, 20V P-channel MOSFET (SI2365EDS-T1-GE3) in SOT-23-3, the domestic alternative VB2290 provides a functionally compatible option with a slightly reduced current rating (4A vs. 5.9A) and higher on-resistance. It serves as a viable backup or cost-effective choice for applications where the highest current performance is not critical.
The core takeaway is that selection depends on precise requirement matching. Domestic alternatives not only offer supply chain diversification but can also provide competitive or even superior parameters in certain cases, giving engineers greater flexibility in design trade-offs and cost optimization. Understanding each device's specifications and design goals is essential to leveraging its full value in the circuit.