In medium and high voltage power circuit design, selecting a MOSFET that balances voltage withstand, current capability, and switching performance is a key task for engineers. This involves careful trade-offs among ruggedness, efficiency, cost, and supply chain diversity. This article uses two representative MOSFETs, IRF9610SPBF (P-channel) and SIHB24N65EFT1-GE3 (N-channel), as benchmarks. It deeply analyzes their design cores and application scenarios, and provides a comparative evaluation of two domestic alternative solutions, VBL2205M and VBL165R20S. By clarifying their parameter differences and performance orientations, we aim to provide a clear selection guide to help you find the most suitable power switching solution in your next design.
Comparative Analysis: IRF9610SPBF (P-channel) vs. VBL2205M
Analysis of the Original Model (IRF9610SPBF) Core:
This is a 200V P-channel MOSFET from VISHAY, in a D2PAK (TO-263) surface-mount package. Its design core is to offer a best combination of fast switching, ruggedness, low on-resistance, and cost-effectiveness for designers. A key advantage is its high power handling capability with a very low on-resistance for its class (3Ω @10V, 0.9A), alongside a continuous drain current of 1.8A. The D2PAK package accommodates a large die size (HEX-4), providing excellent thermal performance.
Compatibility and Differences of the Domestic Alternative (VBL2205M):
VBsemi's VBL2205M is also housed in a TO-263 package, offering direct pin-to-pin compatibility. The main differences are in electrical parameters: VBL2205M features a significantly lower on-resistance (500mΩ @10V vs. 3Ω) and a much higher continuous drain current (-11A vs. 1.8A), while maintaining the same -200V voltage rating. This represents a substantial performance enhancement in conduction characteristics.
Key Application Areas:
Original Model IRF9610SPBF: Suitable for medium-voltage P-channel applications requiring rugged design and cost-effectiveness, such as:
High-side switching in offline auxiliary power supplies.
Polarity protection or load switching in industrial controls.
Circuits where the 1.8A current rating and specific RDS(on) are sufficient.
Alternative Model VBL2205M: Ideal for upgraded scenarios demanding much lower conduction loss and higher current capability (up to -11A) in -200V systems. Its vastly superior RDS(on) makes it suitable for more efficient power management, motor control, or switching applications where reducing heat generation is critical.
Comparative Analysis: SIHB24N65EFT1-GE3 (N-channel) vs. VBL165R20S
This N-channel MOSFET is designed for high-voltage, high-current switching with a focus on efficiency and reliability.
Analysis of the Original Model (SIHB24N65EFT1-GE3) Core:
This 650V, 24A N-channel MOSFET from VISHAY in a D2PAK package is built for demanding applications. Its core advantages include:
High Voltage & Current Rating: 650V Vdss and 24A continuous current make it robust for offline power and motor drives.
Low Conduction Loss: An on-resistance of 156mΩ @10V helps minimize power loss in the on-state.
Rugged Package: The D2PAK package ensures good thermal dissipation for high-power handling.
Compatibility and Differences of the Domestic Alternative (VBL165R20S):
VBsemi's VBL165R20S is a highly competitive direct alternative in a TO-263 package. It matches the key specs closely: same 650V voltage rating, a similar continuous current of 20A (vs. 24A), and an almost identical on-resistance of 160mΩ @10V (vs. 156mΩ). This makes it a near-drop-in replacement with comparable performance.
Key Application Areas:
Original Model SIHB24N65EFT1-GE3: An excellent choice for high-efficiency, high-reliability applications like:
Switch Mode Power Supplies (SMPS) for servers, telecom, and industrial equipment.
Power Factor Correction (PFC) stages.
Motor drives and inverters requiring 650V withstand capability.
Alternative Model VBL165R20S: Perfect for the same high-voltage application domains—SMPS, PFC, motor drives—where a reliable domestic alternative with matching electrical characteristics (650V, ~160mΩ, 20A) is needed for supply chain diversification or cost optimization.
Conclusion
In summary, this analysis reveals two distinct selection pathways:
For P-channel applications around 200V, the original IRF9610SPBF offers a proven, cost-effective solution for medium-current needs. Its domestic alternative VBL2205M provides a dramatic performance upgrade with vastly lower on-resistance (500mΩ vs. 3Ω) and higher current capability (-11A vs. 1.8A), making it a superior choice for new designs prioritizing efficiency and power density.
For high-voltage N-channel applications at 650V, the original SIHB24N65EFT1-GE3 is a robust performer for 24A applications. Its domestic alternative VBL165R20S serves as a highly compatible and reliable substitute, offering nearly identical key parameters (650V, 160mΩ, 20A), ensuring seamless design integration for supply chain resilience.
The core takeaway is that selection depends on precise requirement matching. In the context of supply chain diversification, domestic alternatives like VBL2205M and VBL165R20S not only provide viable backups but also offer opportunities for performance enhancement or cost-effective substitution, giving engineers greater flexibility in their design and sourcing strategies. Understanding each device's parameter implications is key to unlocking its full value in the circuit.