In modern power design, selecting the right MOSFET involves balancing voltage, current, on-resistance, and thermal performance. This analysis compares two established MOSFETs—BUK78150-55A/CU135 and BUK768R1-100E,118—with their Chinese alternatives, VBJ1695 and VBL1105, to provide clear guidance for replacement and optimization in various applications.
Comparative Analysis: BUK78150-55A/CU135 (N-channel) vs. VBJ1695
Analysis of the Original Model (BUK78150-55A/CU135) Core:
This Nexperia N-channel MOSFET in a compact package offers a 55V drain-source voltage and a continuous drain current of 5.5A. Its key feature is a moderate on-resistance of 150mΩ at 10V gate drive, with a power dissipation of 8W, making it suitable for low-to-medium power switching where space and cost are constraints.
Compatibility and Differences of the Domestic Alternative (VBJ1695):
VBsemi’s VBJ1695 is an N-channel MOSFET in an SOT223 package, providing a direct pin-to-pin compatible alternative. It shows improved performance with a higher voltage rating of 60V and significantly lower on-resistance: 85mΩ at 4.5V and 76mΩ at 10V. However, its continuous current rating is 4.5A, slightly lower than the original’s 5.5A.
Key Application Areas:
- Original Model BUK78150-55A/CU135: Ideal for 55V systems requiring up to 5.5A current, such as low-power DC-DC converters, load switches, or motor drives in consumer electronics and automotive modules.
- Alternative Model VBJ1695: Better suited for applications needing higher voltage tolerance (up to 60V) and lower conduction losses, despite a slight reduction in current capacity. Typical uses include power management in portable devices, LED drivers, or battery protection circuits.
Comparative Analysis: BUK768R1-100E,118 (N-channel) vs. VBL1105
This comparison focuses on high-power N-channel MOSFETs, where low on-resistance and high current handling are critical for efficiency.
Analysis of the Original Model (BUK768R1-100E,118) Core:
The BUK768R1-100E,118 from Nexperia is a high-performance MOSFET in a TO-263 package, rated for 100V and 100A continuous current. Its standout feature is an ultra-low on-resistance of 8.1mΩ at 10V (measured at 25A), enabling minimal power loss in high-current paths, ideal for demanding power applications.
Compatibility and Differences of the Domestic Alternative (VBL1105):
VBsemi’s VBL1105 offers a compatible TO-263 package with enhanced parameters: it matches the 100V rating but increases the continuous current to 140A and reduces the on-resistance to just 4mΩ at 10V. This represents a significant performance boost in both current capacity and conduction efficiency.
Key Application Areas:
- Original Model BUK768R1-100E,118: Excellent for high-power applications such as server power supplies, industrial motor drives, automotive systems, and DC-DC converters in 48V or higher voltage systems, where 100A capability and low loss are required.
- Alternative Model VBL1105: Suited for upgrade scenarios demanding even higher current (up to 140A) and lower on-resistance, such as high-density power converters, electric vehicle powertrains, or heavy-duty industrial equipment, offering improved thermal performance and efficiency.
Conclusion:
The selection between original and alternative MOSFETs depends on specific design priorities. For the BUK78150-55A/CU135, the domestic alternative VBJ1695 provides higher voltage and lower on-resistance with a slight current trade-off, ideal for voltage-sensitive, efficiency-focused designs. For the BUK768R1-100E,118, the alternative VBL1105 delivers superior current handling and lower on-resistance, making it a powerful upgrade for high-power applications. Domestic alternatives like VBJ1695 and VBL1105 not only offer reliable replacements but also enable performance enhancements, giving engineers flexible options for optimizing power designs in a diversified supply chain.