MOSFET Selection for High-Voltage Power Applications: STW28NM60ND, STD4N90K5 vs. China Alternatives VBP16R20S and VBE19R02S
In high-voltage power conversion and switching applications, selecting a MOSFET that balances voltage rating, conduction loss, and ruggedness is a critical engineering challenge. This goes beyond simple part substitution, requiring careful consideration of performance, cost, and supply chain stability. This article uses two representative high-voltage MOSFETs, STW28NM60ND (600V class) and STD4N90K5 (900V class), as benchmarks. We will analyze their design cores and application scenarios, and provide a comparative evaluation of two domestic alternative solutions: VBP16R20S and VBE19R02S. By clarifying parameter differences and performance orientations, this article aims to provide a clear selection guide to help you find the optimal power switching solution for your next high-voltage design.
Comparative Analysis: STW28NM60ND (600V N-channel) vs. VBP16R20S
Analysis of the Original Model (STW28NM60ND) Core:
This is a 600V N-channel MOSFET from STMicroelectronics in a TO-247-3 package. Its design core is to deliver robust performance and high power handling in a standard high-power package. Key advantages include: a continuous drain current (Id) of 23A, an on-resistance (RDS(on)) of 150mΩ at 10V gate drive, and a high power dissipation (Pd) capability of 190W. This combination makes it suitable for demanding high-current switching.
Compatibility and Differences of the Domestic Alternative (VBP16R20S):
VBsemi's VBP16R20S is also offered in a TO-247 package and serves as a pin-to-pin compatible alternative. The main differences are in electrical parameters: it has a similar 600V voltage rating but a slightly lower continuous current rating of 20A. Its on-resistance is comparable at 160mΩ (@10V), offering similar conduction performance. It utilizes a Super Junction Multi-EPI process.
Key Application Areas:
Original Model STW28NM60ND: Ideal for high-power 600V applications requiring high current capability and robust thermal performance.
Switched-Mode Power Supplies (SMPS): PFC (Power Factor Correction) stages, hard-switched converters.
Motor Drives: Inverters for industrial motor control.
High-Power Lighting: Ballasts and drivers for HID lighting.
Alternative Model VBP16R20S: A suitable domestic alternative for 600V applications where the current requirement is within 20A, providing a reliable option for SMPS, motor drives, and UPS systems with good supply chain flexibility.
Comparative Analysis: STD4N90K5 (900V N-channel) vs. VBE19R02S
This comparison focuses on high-voltage, lower-current applications where voltage withstand capability is paramount.
Analysis of the Original Model (STD4N90K5) Core:
This STMicroelectronics MOSFET is a 900V N-channel device in a DPAK package, part of the MDmesh K5 series. Its design pursues high voltage rating with optimized switching performance for compact designs. Key features are: a 900V drain-source voltage (Vdss), a 3A continuous drain current, and an on-resistance of 2.1Ω at 10V gate drive. It offers a good balance of high voltage capability and switching efficiency in a space-saving package.
Compatibility and Differences of the Domestic Alternative (VBE19R02S):
VBsemi's VBE19R02S comes in a TO-252 (DPAK) package, providing direct pin-to-pin compatibility. It matches the 900V voltage rating. Its key parameters are a 2A continuous current and an on-resistance of 2700mΩ (2.7Ω) at 10V. It is based on a Super Junction Multi-EPI technology, targeting similar high-voltage, low-power switching applications.
Key Application Areas:
Original Model STD4N90K5: Excellent for high-voltage, compact applications requiring reliable 900V operation.
Offline SMPS: Flyback converter primary-side switches in adapters, auxiliary power supplies.
Lighting: LED driver circuits for high-brightness applications.
Industrial Controls: Snubber circuits, relay replacements.
Alternative Model VBE19R02S: A viable domestic alternative for 900V applications with current demands around 2A, such as low-power offline flyback converters, LED drivers, and auxiliary power supplies, offering a cost-effective and accessible option.
Summary
This analysis reveals two distinct selection paths for high-voltage applications:
For 600V high-current applications, the original STW28NM60ND, with its 23A current rating and 190W power dissipation, offers robust performance for demanding SMPS and motor drives. Its domestic alternative VBP16R20S provides a compatible package and similar on-resistance with a 20A rating, making it a strong candidate for applications where current requirements are slightly lower or supply chain diversification is needed.
For 900V compact applications, the original STD4N90K5 delivers reliable high-voltage switching with its MDmesh K5 technology in a DPAK package, ideal for flyback converters and lighting. The domestic alternative VBE19R02S matches the voltage rating and package, serving as a practical alternative for designs with ~2A current needs.
The core conclusion is: Selection depends on precise requirement matching. In the context of supply chain diversification, domestic alternatives like VBP16R20S and VBE19R02S not only provide feasible backup options but also offer engineers greater flexibility and resilience in design trade-offs and cost control. Understanding each device's parameter implications is key to maximizing its value in the circuit.