MOSFET Selection for High-Voltage Power Applications: STP32N65M5, STW28N60M2 vs. China Alternatives VBM165R32S and VBP16R26S
In high-voltage and high-power circuit design, selecting a MOSFET that offers the optimal balance of voltage withstand capability, current handling, and conduction loss is a critical task for engineers. This goes beyond simple part substitution; it involves a careful trade-off among performance, reliability, thermal management, and cost. This article takes two representative high-voltage MOSFETs, STP32N65M5 (650V) and STW28N60M2 (600V), as benchmarks, analyzes their design focus and application scenarios, and evaluates two domestic alternative solutions, VBM165R32S and VBP16R26S. By clarifying their parameter differences and performance orientations, we aim to provide a clear selection guide to help you find the most suitable power switching solution in the complex component landscape.
Comparative Analysis: STP32N65M5 (650V N-channel) vs. VBM165R32S
Analysis of the Original Model (STP32N65M5) Core:
This is a 650V N-channel MOSFET from STMicroelectronics in a TO-220 package. Its design core is to provide robust performance in high-voltage applications with a good balance of current capability and switching characteristics. Key advantages include: a high drain-source voltage (Vdss) of 650V, a continuous drain current (Id) of 24A, and an on-resistance (RDS(on)) of 119mΩ measured at 10V, 12A. This makes it suitable for circuits requiring reliable operation at elevated voltages.
Compatibility and Differences of the Domestic Alternative (VBM165R32S):
VBsemi's VBM165R32S is also offered in a TO-220 package and serves as a pin-to-pin compatible alternative. The main differences are in the electrical parameters: VBM165R32S matches the 650V voltage rating but offers significant improvements in key performance metrics. It features a lower on-resistance of 85mΩ (@10V) and a higher continuous current rating of 32A.
Key Application Areas:
Original Model STP32N65M5: Well-suited for high-voltage applications such as power supplies, inverters, and motor drives where 650V withstand capability and ~24A current are required.
Alternative Model VBM165R32S: An enhanced-performance alternative ideal for upgraded designs demanding lower conduction losses (due to 85mΩ RDS(on)) and higher current capacity (32A) within the same 650V/TO-220 footprint. Suitable for more efficient or higher-power power supplies, PFC circuits, and motor controllers.
Comparative Analysis: STW28N60M2 (600V N-channel) vs. VBP16R26S
Analysis of the Original Model (STW28N60M2) Core:
This STMicroelectronics MOSFET is a 600V N-channel device in a TO-247 package, part of the MDmesh M2 series. It is designed for high-power applications where thermal performance is crucial. Its core advantages include: a 600V voltage rating, 22A continuous current, and an on-resistance of 135mΩ (@10V). The larger TO-247 package provides superior thermal dissipation compared to TO-220.
Compatibility and Differences of the Domestic Alternative (VBP16R26S):
VBsemi's VBP16R26S is a direct pin-to-pin compatible alternative in the TO-247 package. It maintains the same 600V voltage rating but offers improved performance: a lower on-resistance of 115mΩ (@10V) and a higher continuous current rating of 26A.
Key Application Areas:
Original Model STW28N60M2: An excellent choice for high-power applications like industrial SMPS, UPS systems, and motor drives where 600V blocking voltage, 22A current, and the thermal advantage of the TO-247 package are needed.
Alternative Model VBP16R26S: A performance-enhanced alternative providing lower conduction loss (115mΩ RDS(on)) and higher current handling (26A). It is ideal for next-generation or upgraded designs in similar high-power fields (e.g., servers, welding equipment, high-power converters) seeking improved efficiency and power density within the same mechanical footprint.
Summary
In summary, this analysis reveals clear upgrade paths offered by the domestic alternatives:
For 650V applications using the TO-220 package, the original STP32N65M5 provides solid performance. Its domestic alternative VBM165R32S offers a significant performance boost with lower on-resistance (85mΩ vs. 119mΩ) and higher current rating (32A vs. 24A), making it a compelling choice for efficiency-focused upgrades or new designs requiring higher power within the same form factor.
For 600V, higher-power applications using the TO-247 package, the original STW28N60M2 is a reliable workhorse. Its domestic alternative VBP16R26S delivers enhanced performance through lower on-resistance (115mΩ vs. 135mΩ) and a higher current rating (26A vs. 22A), positioning it as a superior option for designs pushing the limits of efficiency and output power.
The core conclusion is: Selection depends on precise requirement matching. In the context of supply chain diversification, these domestic alternatives (VBM165R32S and VBP16R26S) not only provide viable, pin-compatible replacements but also offer measurable performance advantages in key parameters like RDS(on) and current handling. This gives engineers greater flexibility and resilience in design trade-offs and cost optimization. Understanding the parameter implications of each device is essential to maximize its value in the circuit.