MOSFET Selection for Power Switching Solutions: STL8N10F7, STU13NM60N vs. China Alternatives VBGQF1101N, VBFB16R11S
In modern power design, choosing the right MOSFET involves balancing voltage rating, current capability, switching efficiency, and cost. This comparison takes two established STMicroelectronics MOSFETs—STL8N10F7 (100V) and STU13NM60N (600V)—as references and evaluates their pin-to-pin domestic alternatives from VBsemi: VBGQF1101N and VBFB16R11S. By analyzing their key parameters and design focus, we provide a clear selection guide for your next power switching application.
Comparative Analysis: STL8N10F7 (100V N-channel) vs. VBGQF1101N
Original Model (STL8N10F7) Core Analysis:
This is a 100V N-channel MOSFET in a compact PowerVDFN-8 (3.3x3.3mm) package. It features a low typical on-resistance of 17mΩ and a continuous drain current rating of 35A. Designed with ST’s STripFET F7 technology, it emphasizes low conduction loss and good thermal performance in a small footprint, making it suitable for space-constrained, medium-power applications.
Domestic Alternative (VBGQF1101N) Compatibility and Differences:
VBsemi’s VBGQF1101N offers a direct pin-to-pin alternative in a DFN8 (3x3mm) package. It shows enhanced performance in key areas: a lower on-resistance of 10.5mΩ at 10V (vs. 20mΩ for STL8N10F7) and a higher continuous current rating of 50A (vs. 35A). Both are 100V devices, but the alternative provides lower conduction loss and higher current handling.
Key Application Areas:
- STL8N10F7: Ideal for 48-100V systems requiring compact size and good efficiency, such as DC-DC converters, motor drives, and power tools.
- VBGQF1101N: Suited for upgrades where lower RDS(on) and higher current capability are needed, offering improved efficiency and power density in similar applications.
Comparative Analysis: STU13NM60N (600V N-channel) vs. VBFB16R11S
Original Model (STU13NM60N) Core Analysis:
This 600V N-channel MOSFET in a TO-251 (IPAK) package is designed for high-voltage switching. It offers an on-resistance of 360mΩ at 10V and a continuous current of 11A. Its robust voltage rating and through-hole package make it reliable for offline power supplies and industrial controls.
Domestic Alternative (VBFB16R11S) Compatibility and Differences:
VBsemi’s VBFB16R11S is a direct replacement in the same TO-251 package. It matches the 600V rating and 11A current closely, with a comparable on-resistance of 380mΩ at 10V. The alternative uses a Multi-EPI SJ structure, offering similar performance with potential cost and supply chain benefits.
Key Application Areas:
- STU13NM60N: Commonly used in AC-DC converters, SMPS, lighting ballasts, and appliance controls where 600V withstand capability is essential.
- VBFB16R11S: A viable alternative for the same high-voltage applications, providing a reliable domestic option without significant parameter trade-offs.
Conclusion
This comparison highlights two distinct selection paths:
- For 100V applications, the original STL8N10F7 delivers solid performance in a compact package, while its alternative VBGQF1101N offers superior on-resistance and current capability for enhanced efficiency.
- For 600V applications, the STU13NM60N provides proven high-voltage switching, and the VBFB16R11S serves as a reliable, parameter-close alternative.
The core insight is that selection depends on precise requirement matching. Domestic alternatives like VBGQF1101N and VBFB16R11S not only offer compatibility but also bring performance improvements or cost advantages, giving engineers greater flexibility in design and supply chain strategy. Understanding each device’s parameters ensures optimal performance and value in your circuit.