MOSFET Selection for High-Voltage Power Applications: STL16N60M2, STP5NK100Z vs. China Alternatives VBQA165R05S, VBM115MR03
In high-voltage power designs, selecting a MOSFET that balances voltage rating, switching performance, and thermal efficiency is a critical engineering challenge. This involves careful trade-offs among ruggedness, conduction loss, package suitability, and supply chain flexibility. This article takes two representative high-voltage MOSFETs—STL16N60M2 (600V N-channel) and STP5NK100Z (1000V N-channel)—as benchmarks, analyzes their design focus and typical applications, and evaluates two domestic alternative solutions: VBQA165R05S and VBM115MR03. By clarifying parameter differences and performance orientations, we provide a clear selection guide to help you identify the most suitable power switching solution for your next high-voltage design.
Comparative Analysis: STL16N60M2 (600V N-channel) vs. VBQA165R05S
Analysis of the Original Model (STL16N60M2) Core:
This is a 600V N-channel MOSFET from STMicroelectronics, featuring MDmesh M2 technology in a compact PowerFlat 5x6 HV package. Its design focuses on achieving low conduction loss and good switching performance in medium-power offline applications. Key advantages include a typical on-resistance (RDS(on)) of 0.29 Ω (355mΩ @10V max), a continuous drain current of 8A, and optimized dynamic characteristics for efficient switching.
Compatibility and Differences of the Domestic Alternative (VBQA165R05S):
VBsemi’s VBQA165R05S is offered in a DFN8(5x6) package and serves as a pin-to-pin compatible alternative. The main differences are in electrical parameters: VBQA165R05S has a higher voltage rating (650V) but a higher on-resistance (1000mΩ @10V) and a lower continuous current rating (5A) compared to the original.
Key Application Areas:
- Original Model STL16N60M2: Ideal for medium-power offline switch-mode power supplies (SMPS), power factor correction (PFC) stages, and lighting ballasts operating around 600V, where a balance of voltage rating, current capability, and low RDS(on) is required.
- Alternative Model VBQA165R05S: Suitable for applications requiring a higher voltage margin (650V) but with moderate current demand (up to 5A), such as auxiliary power supplies or lower-power AC-DC converters where package size and voltage ruggedness are priorities.
Comparative Analysis: STP5NK100Z (1000V N-channel) vs. VBM115MR03
Analysis of the Original Model (STP5NK100Z) Core:
This 1000V N-channel MOSFET from ST utilizes SuperMESH™ technology in a TO-220 package. It is designed for high-voltage, high-dv/dt ruggedness in demanding applications. Key features include a high breakdown voltage (1000V), a continuous current of 3.5A, an on-resistance of 2.7Ω @10V, and enhanced switching robustness.
Compatibility and Differences of the Domestic Alternative (VBM115MR03):
VBsemi’s VBM115MR03 is offered in a TO-220 package and provides a compatible alternative. It significantly increases the voltage rating to 1500V but comes with a higher on-resistance (6000mΩ @10V) and a similar continuous current rating of 3A.
Key Application Areas:
- Original Model STP5NK100Z: Well-suited for high-voltage switching applications such as SMPS primary sides, motor drives, induction heating, and electronic ballasts where 1000V breakdown and good dv/dt capability are critical.
- Alternative Model VBM115MR03: Targets applications requiring even higher voltage isolation (1500V) and ruggedness, such as industrial power supplies, renewable energy systems, or specific high-voltage auxiliary circuits, where the higher RDS(on) can be accommodated.
Summary
This comparison reveals two distinct selection paths for high-voltage designs:
- For 600V-class medium-power applications like SMPS and PFC, the original STL16N60M2 offers a strong balance of 8A current, 355mΩ RDS(on), and proven MDmesh M2 performance. Its domestic alternative VBQA165R05S provides a higher 650V rating and package compatibility but with reduced current (5A) and higher resistance (1000mΩ), making it suitable for designs prioritizing voltage margin over conduction loss.
- For 1000V+ high-voltage rugged applications, the original STP5NK100Z delivers reliable 1000V/3.5A performance with SuperMESH™ robustness. The domestic alternative VBM115MR03 steps up to 1500V withstand capability, offering a solution for extreme voltage requirements, albeit with higher RDS(on) (6000mΩ) and similar current (3A).
Core Conclusion: Selection depends on precise requirement matching. In a diversified supply chain, domestic alternatives like VBQA165R05S and VBM115MR03 provide viable backup options and, in some parameters (e.g., higher voltage ratings), offer enhanced margins, giving engineers greater flexibility in design trade-offs and cost control. Understanding each device’s design philosophy and parameter implications is key to maximizing its value in the circuit.