MOSFET Selection for High-Voltage Power Applications: STF2LN60K3, STP28N60DM2 vs. China Alternatives VBMB165R02 and VBM16R20S
In high-voltage power designs, selecting the right MOSFET involves balancing voltage rating, current capability, switching efficiency, and thermal performance. This analysis compares two established STMicroelectronics MOSFETs—STF2LN60K3 (low-current) and STP28N60DM2 (high-current)—with their domestic alternatives, VBMB165R02 and VBM16R20S from VBsemi. We examine their core parameters, design strengths, and ideal applications to guide your selection for robust and efficient high-voltage switching solutions.
Comparative Analysis: STF2LN60K3 (N-channel) vs. VBMB165R02
Analysis of the Original Model (STF2LN60K3) Core:
This 600V N-channel MOSFET from STMicroelectronics comes in a TO-220FP package. It is designed for low-to-medium power high-voltage applications where simplicity and reliability are key. Its main features include a 600V drain-source voltage (Vdss), a continuous drain current (Id) of 2A, and an on-resistance (RDS(on)) of 4.5Ω at 10V gate drive. This combination suits circuits requiring high voltage blocking with modest current handling.
Compatibility and Differences of the Domestic Alternative (VBMB165R02):
VBsemi's VBMB165R02 offers a direct pin-to-pin alternative in a TO-220F package. While both are N-channel, key differences exist: VBMB165R02 has a higher voltage rating (650V vs. 600V) and a significantly lower on-resistance of 1700mΩ (1.7Ω) at 10V. Its continuous current rating remains 2A. This makes it a potentially more efficient drop-in replacement in applications where lower conduction loss is beneficial within the same current range.
Key Application Areas:
Original Model STF2LN60K3: Ideal for auxiliary power supplies, offline switchers, or snubber circuits in appliances, industrial controls, and lighting where 600V/2A capability is sufficient.
Alternative Model VBMB165R02: Suitable for similar low-power 600V+ applications as the original but offers improved efficiency due to lower RDS(on) and a higher voltage safety margin. It fits well in power factor correction (PFC) stages or flyback converters for low-power SMPS.
Comparative Analysis: STP28N60DM2 (N-channel) vs. VBM16R20S
This comparison shifts to high-power switching, where low conduction loss and high current capability are critical.
Analysis of the Original Model (STP28N60DM2) Core:
The STP28N60DM2 is a 600V N-channel MOSFET using ST's MDmesh DM2 technology in a TO-220 package. It is engineered for high-efficiency, high-power applications. Its core strengths are a high continuous current of 21A and a very low on-resistance of 160mΩ at 10V gate drive. This low RDS(on) minimizes conduction losses, making it excellent for demanding power conversion stages.
Compatibility and Differences of the Domestic Alternative (VBM16R20S):
VBsemi's VBM16R20S is a highly competitive alternative in a TO-220 package. It matches the original's 600V voltage rating and offers a nearly identical on-resistance of 160mΩ at 10V. Its continuous current rating is 20A, slightly below the original's 21A, but remains in the same high-power league. This makes it a near-performance equivalent for most practical applications.
Key Application Areas:
Original Model STP28N60DM2: A top choice for high-power switch-mode power supplies (SMPS), motor drives, inverters, and welding equipment requiring 600V blocking and high current (up to 21A) with minimal loss.
Alternative Model VBM16R20S: Excellently suited as a direct replacement for the STP28N60DM2 in applications like server/telecom PSUs, industrial motor controllers, and solar inverters, offering comparable efficiency and robust 600V/20A performance.
Conclusion
This analysis outlines two clear substitution paths for high-voltage designs:
1. For low-to-medium power 600V applications (around 2A), the original STF2LN60K3 provides reliable performance. Its domestic alternative, VBMB165R02, offers a compelling upgrade with a higher 650V rating and significantly lower on-resistance (1.7Ω vs. 4.5Ω), enabling better efficiency as a drop-in replacement.
2. For high-power 600V applications (20-21A range), the original STP28N60DM2 sets a high standard with its 160mΩ RDS(on). The domestic alternative VBM16R20S stands out as a near-identical performance match, providing the same low 160mΩ on-resistance and robust 20A current capability in a pin-to-pin compatible package.
The core takeaway is that domestic alternatives are not just backup options but can offer parametric advantages or equivalent performance. VBMB165R02 provides an efficiency-enhanced path for lower-power circuits, while VBM16R20S serves as a powerful, direct substitute for high-current designs. Understanding these parametric nuances allows engineers to make informed decisions, optimizing for performance, cost, and supply chain resilience in high-voltage power systems.