MOSFET Selection for High-Voltage Power Applications: STF24N60M2, STP26N60DM6 vs. China Alternatives VBMB165R20S, VBM16R20S
In the design of high-voltage power systems, selecting a MOSFET that balances performance, reliability, and cost is a critical task for engineers. This is not a simple part substitution, but a careful consideration of voltage rating, conduction loss, switching performance, and thermal management. This article takes two representative high-voltage MOSFETs from STMicroelectronics—STF24N60M2 (in TO-220FP package) and STP26N60DM6 (in TO-220 package)—as benchmarks. It deeply analyzes their design cores and application scenarios, and provides a comparative evaluation of two domestic alternative solutions: VBMB165R20S and VBM16R20S from VBsemi. By clarifying parameter differences and performance orientations, we aim to offer a clear selection guide to help you find the most suitable power switching solution in the complex world of high-voltage components.
Comparative Analysis: STF24N60M2 (N-channel, TO-220FP) vs. VBMB165R20S
Analysis of the Original Model (STF24N60M2) Core:
This is a 600V N-channel MOSFET from STMicroelectronics, utilizing the TO-220FP package. It is built on the MDmesh M2 technology platform, designed to deliver a balance of high voltage capability, low conduction loss, and good switching performance in a standard through-hole package. Its key advantages are: a drain-source voltage (Vdss) of 600V, a continuous drain current (Id) of 18A, and a typical on-resistance (RDS(on)) of 168mΩ. The specified RDS(on) is 190mΩ at 10V gate drive and 9A drain current. The TO-220FP package offers good thermal performance with a lower profile footprint compared to standard TO-220.
Compatibility and Differences of the Domestic Alternative (VBMB165R20S):
VBsemi's VBMB165R20S is offered in a standard TO-220F package and serves as a functional and pin-to-pin compatible alternative. The main differences lie in the electrical parameters: VBMB165R20S features a higher voltage rating (650V vs. 600V) and a slightly higher continuous current rating (20A vs. 18A). Crucially, its on-resistance is lower, specified at 160mΩ at 10V gate drive. This indicates potentially lower conduction losses. It utilizes a Super Junction Multi-EPI process.
Key Application Areas:
Original Model STF24N60M2: Well-suited for 600V-class applications requiring reliable performance in a standard package. Typical applications include:
Switched-Mode Power Supplies (SMPS): PFC stages, flyback, or forward converters.
Motor Drives: Inverters for appliances and industrial controls.
Lighting: Electronic ballasts and LED drivers.
Alternative Model VBMB165R20S: Suitable as a direct replacement or for new designs requiring enhanced margins in voltage and current, along with lower conduction loss. Its 650V rating and 20A current make it robust for similar high-voltage switching applications.
Comparative Analysis: STP26N60DM6 (N-channel, TO-220) vs. VBM16R20S
This comparison focuses on another 600V workhorse from ST, the STP26N60DM6 in a standard TO-220 package, against its domestic alternative.
Analysis of the Original Model (STP26N60DM6) Core:
The STP26N60DM6 is an N-channel 600V MOSFET based on ST's MDmesh DM6 technology. It is designed for high efficiency and robustness. Its key parameters are a 600V Vdss, 18A continuous current, and a typical RDS(on) of 165mΩ (195mΩ @ 10V gate drive per datasheet). The standard TO-220 package provides excellent thermal dissipation capability for medium-to-high power applications.
Compatibility and Differences of the Domestic Alternative (VBM16R20S):
VBsemi's VBM16R20S comes in a standard TO-220 package, ensuring mechanical and pin compatibility. It matches the 600V voltage rating of the original but offers a higher continuous current rating of 20A. Its on-resistance is specified at 160mΩ @ 10V, which is lower than the original's 195mΩ, promising improved conduction efficiency. It also employs a Super Junction Multi-EPI process.
Key Application Areas:
Original Model STP26N60DM6: A reliable choice for various 600V power conversion applications where the standard TO-220 package is preferred for its thermal performance. Common uses include:
Power Factor Correction (PFC) circuits.
DC-DC converters in telecom and server power supplies.
UPS and inverter systems.
Alternative Model VBM16R20S: Serves as a strong drop-in alternative, offering equivalent voltage rating with improved current handling (20A) and lower on-resistance. It is ideal for designers seeking to reduce losses or gain performance headroom in existing TO-220 based designs or new projects.
Conclusion
In summary, this analysis reveals clear and viable domestic alternative paths for these high-voltage ST MOSFETs:
For the TO-220FP packaged STF24N60M2, the domestic alternative VBMB165R20S (TO-220F) provides a compatible form factor with key performance enhancements, including a higher 650V voltage rating, 20A current capability, and a lower 160mΩ on-resistance.
For the standard TO-220 packaged STP26N60DM6, the domestic alternative VBM16R20S offers direct pin-to-pin replacement with superior electrical characteristics: the same 600V rating, but with a higher 20A current rating and a lower 160mΩ on-resistance compared to the original's 195mΩ.
The core takeaway is that selection depends on precise requirement matching. In the context of supply chain diversification, these domestic alternatives from VBsemi not only provide reliable backup options but also deliver measurable performance improvements in critical parameters like on-resistance and current rating. This offers engineers greater flexibility, potential for higher efficiency, and resilience in design and cost optimization for high-voltage power applications. Understanding the specific parameters and intended application is key to leveraging the full value of these components.