MOSFET Selection for High-Voltage Power Applications: STB4NK60Z-1, STW24N60M2 vs. China Alternatives VBN165R04 and VBP16R20S
In high-voltage power conversion and switching applications, selecting the right MOSFET is critical for balancing efficiency, reliability, and cost. Engineers often face the challenge of finding suitable alternatives without compromising performance. This article takes two established STMicroelectronics MOSFETs—STB4NK60Z-1 and STW24N60M2—as benchmarks, analyzes their core design and typical use cases, and evaluates two domestic alternative solutions: VBN165R04 and VBP16R20S. By comparing key parameters and performance orientations, we provide a clear selection guide to help identify the optimal power switching solution for your next high-voltage design.
Comparative Analysis: STB4NK60Z-1 (N-channel) vs. VBN165R04
Analysis of the Original Model (STB4NK60Z-1) Core:
This is a 600V, 4A N-channel MOSFET from STMicroelectronics in an I2PAK package. It is designed for robust and reliable switching in offline power supplies, lighting, and auxiliary power circuits. Its key strengths include a high voltage rating (600V) suitable for universal mains applications, a moderate on-resistance of 2Ω at 10V gate drive, and a package offering good thermal performance for its power level.
Compatibility and Differences of the Domestic Alternative (VBN165R04):
VBsemi's VBN165R04, offered in a TO-262 package, serves as a functional alternative. The primary differences are in the electrical specifications: VBN165R04 features a slightly higher voltage rating (650V vs. 600V) and a significantly lower on-resistance of 2500mΩ (2.5Ω) at 10V. The continuous current rating remains similar at 4A. The planar technology provides stable performance.
Key Application Areas:
Original Model STB4NK60Z-1: Ideal for cost-sensitive, medium-voltage switching applications where 600V capability is sufficient. Typical uses include:
Auxiliary power supplies in consumer electronics and appliances.
Power factor correction (PFC) stages in lower-power AC-DC converters.
Switching for ballasts and LED lighting drivers.
Alternative Model VBN165R04: Suitable as a drop-in replacement or new design choice for applications requiring a 650V rating and slightly improved conduction loss, particularly in offline power supplies and lighting where its TO-262 package is acceptable.
Comparative Analysis: STW24N60M2 (N-channel) vs. VBP16R20S
This comparison shifts to higher-power applications where efficiency and current handling are paramount.
Analysis of the Original Model (STW24N60M2) Core:
This is a 650V, 18A N-channel MOSFET utilizing ST's MDmesh M2 technology in a TO-247 package. Its design focuses on low conduction loss and fast switching for high-efficiency power conversion. Its core advantages are:
Low On-Resistance: Features an RDS(on) of 190mΩ at 10V gate drive, minimizing conduction losses.
High Current Capability: A continuous drain current of 18A supports substantial power levels.
Advanced Technology: The MDmesh M2 structure offers a good balance between switching performance and ruggedness.
Compatibility and Differences of the Domestic Alternative (VBP16R20S):
VBsemi's VBP16R20S presents a "performance-enhanced" alternative in a TO-247 package. It demonstrates comprehensive parameter improvements:
It matches the 600V voltage class.
It offers a higher continuous current rating of 20A.
Crucially, it achieves a substantially lower on-resistance of 160mΩ at 10V gate drive, thanks to its Super Junction Multi-EPI technology.
Key Application Areas:
Original Model STW24N60M2: Excels in high-efficiency, medium-to-high power applications such as:
Main switches in switch-mode power supplies (SMPS) for servers, telecom, and industrial equipment.
Motor drives and inverters.
High-power PFC stages and DC-DC converters.
Alternative Model VBP16R20S: Ideal for upgrade scenarios or new designs demanding lower conduction loss and higher current capacity. It is well-suited for:
High-efficiency server power supplies.
Solar inverters and UPS systems.
High-power motor controllers and industrial drives.
Conclusion
This analysis outlines two distinct selection pathways for high-voltage MOSFETs:
For medium-power, cost-optimized 600V applications, the original STB4NK60Z-1 provides a reliable solution with proven performance in lighting and auxiliary power. Its domestic alternative, VBN165R04, offers a compatible option with a 650V rating and comparable current handling, suitable for designs requiring a slight voltage margin.
For high-performance, higher-power 600-650V applications, the original STW24N60M2, with its low 190mΩ RDS(on) and 18A rating, is a strong candidate for efficient power conversion. The domestic alternative VBP16R20S emerges as a compelling "performance-enhanced" choice, boasting an even lower 160mΩ RDS(on) and a 20A current rating, enabling higher power density and efficiency in demanding applications like server PSUs and motor drives.
The core takeaway is that selection hinges on precise requirement matching. In the context of supply chain diversification, domestic alternatives like VBN165R04 and VBP16R20S not only provide viable backup options but also offer competitive or superior parameters in key areas, granting engineers greater flexibility and resilience in design trade-offs and cost management. A deep understanding of each device's specifications and intended application is essential to unlock its full potential in the circuit.