MOSFET Selection for Medium to High Voltage Applications: SIHFL210TR-GE3, SIR516DP-T1-RE3 vs. China Alternatives VBJ1201K, VBGQA1107
In today's power design landscape, balancing performance, cost, and supply chain stability is a key challenge for engineers. Selecting the right MOSFET involves more than just a pin-to-pin swap; it requires a careful evaluation of parameters against specific application demands. This article takes two representative MOSFETs from VISHAY—SIHFL210TR-GE3 (200V N-channel) and SIR516DP-T1-RE3 (100V N-channel)—as benchmarks. We will delve into their design cores, application scenarios, and conduct a comparative evaluation with two domestic alternative solutions: VBJ1201K and VBGQA1107. By clarifying their parameter differences and performance orientations, we aim to provide a clear selection guide to help you find the optimal power switching solution for your next design.
Comparative Analysis: SIHFL210TR-GE3 (200V N-channel) vs. VBJ1201K
Analysis of the Original Model (SIHFL210TR-GE3) Core:
This is a 200V N-channel MOSFET from VISHAY in a SOT-223 package. Its design core is to offer a best-in-class combination of fast switching, ruggedness, low on-resistance, and cost-effectiveness for medium-voltage applications. Key advantages include: a drain-source voltage (Vdss) of 200V, a continuous drain current (Id) of 960mA, and an on-resistance (RDS(on)) of 1.5Ω at 10V. The SOT-223 package is designed for surface-mount technology and features an enlarged heatsink tab for improved thermal performance, making it suitable for automated placement.
Compatibility and Differences of the Domestic Alternative (VBJ1201K):
VBsemi's VBJ1201K is also offered in a SOT223 package and serves as a pin-to-pin compatible alternative. The main differences lie in the electrical parameters: VBJ1201K matches the 200V voltage rating but offers a slightly higher continuous current rating of 1A. Its on-resistance is specified at 1200mΩ (1.2Ω) at 10V, which is comparable to the original part's 1.5Ω, ensuring similar conduction performance in this voltage and current class.
Key Application Areas:
Original Model SIHFL210TR-GE3: Ideal for medium-voltage, lower-current switching applications requiring a robust and cost-effective solution in a compact package. Typical uses include:
Switching power supplies (SMPS) for industrial controls.
Power management and load switching in consumer electronics.
Auxiliary power circuits and relay drivers.
Alternative Model VBJ1201K: A suitable domestic alternative for the same application spaces where 200V withstand voltage and around 1A current handling are required, providing a reliable option for supply chain diversification.
Comparative Analysis: SIR516DP-T1-RE3 (100V N-channel) vs. VBGQA1107
This comparison shifts focus to higher-current, lower-resistance applications where efficiency is paramount.
Analysis of the Original Model (SIR516DP-T1-RE3) Core:
This 100V N-channel Gen V TrenchFET from VISHAY, in a PowerPAK-SO-8 package, is engineered for high efficiency and high current. Its core advantages are:
Excellent Conduction Performance: An extremely low on-resistance (RDS(on)) of 9mΩ at 7.5V, supporting a high continuous drain current of 63.7A. This minimizes conduction losses.
Optimized Switching Figure of Merit (FOM): It is optimized for low RDS(on) × Qg and RDS(on) × Qoss, leading to high efficiency in switching applications like synchronous rectification.
Rugged Design: 100% tested for gate resistance (Rg) and Unclamped Inductive Switching (UIS).
Compatibility and Differences of the Domestic Alternative (VBGQA1107):
VBsemi's VBGQA1107, in a DFN8(5x6) package, represents a "performance-competitive" alternative. It matches the 100V voltage rating and surpasses key parameters: a continuous drain current of 75A and an on-resistance of 7.4mΩ at 10V. This indicates the potential for lower conduction losses and higher current capability in a compact footprint.
Key Application Areas:
Original Model SIR516DP-T1-RE3: Its ultra-low RDS(on) and high current capability make it an ideal choice for high-efficiency, high-power-density applications. Primary uses include:
Synchronous Rectification in switch-mode power supplies (SMPS) for servers, telecom, and computing.
Primary-Side Switching in DC-DC converters.
Motor drives and power tools.
Alternative Model VBGQA1107: Suitable for the same demanding applications—synchronous rectification and primary-side switching—where its superior current rating (75A) and low on-resistance (7.4mΩ) can offer performance parity or margin, providing a viable domestic alternative for high-current designs.
Conclusion
In summary, this analysis outlines two distinct selection pathways:
For medium-voltage (200V), lower-current applications around 1A, the original SIHFL210TR-GE3 offers a proven balance of voltage rating, current, and on-resistance in a thermally enhanced SOT-223 package. Its domestic alternative, VBJ1201K, provides a compatible form factor and similar electrical characteristics, serving as a practical alternative for supply chain resilience.
For high-current, low-resistance applications at 100V, the original SIR516DP-T1-RE3 stands out with its exceptionally low 9mΩ RDS(on) and high 63.7A current capability, optimized for efficient synchronous rectification. The domestic alternative VBGQA1107 not only matches this performance tier but exceeds it in current rating (75A) and offers a competitive on-resistance (7.4mΩ), presenting a strong performance-oriented alternative for next-generation designs.
The core takeaway is that selection is not about finding a universally superior part but about precise requirement matching. In the context of supply chain diversification, domestic alternatives like VBJ1201K and VBGQA1107 provide not just backup options but also performance-competitive choices, giving engineers greater flexibility and resilience in design trade-offs and cost optimization. A deep understanding of each device's parameters and design philosophy is essential to unlock its full value in the circuit.