MOSFET Selection for Power Switching Solutions: SI7415DN-T1-GE3, SIRA96DP-T1-GE3 vs. China Alternatives VBQF2625, VBQA1308
In modern power design, balancing performance, size, and reliability is key. Selecting the right MOSFET is critical for efficient power switching. This article takes two established MOSFETs—SI7415DN-T1-GE3 (P-channel) and SIRA96DP-T1-GE3 (N-channel)—as benchmarks, analyzes their design focus and applications, and evaluates two domestic alternatives, VBQF2625 and VBQA1308. By comparing their parameters and performance orientations, we provide a clear selection guide to help you find the optimal power switching solution.
Comparative Analysis: SI7415DN-T1-GE3 (P-channel) vs. VBQF2625
Analysis of the Original Model (SI7415DN-T1-GE3) Core:
This is a -60V P-channel MOSFET from Vishay in a PowerPAK1212-8 package. It is designed for medium-power switching where voltage rating and compactness are important. Its key features include a continuous drain current (Id) of -5.7A and an on-resistance (RDS(on)) of 110mΩ at 4.5V gate drive.
Compatibility and Differences of the Domestic Alternative (VBQF2625):
VBsemi's VBQF2625 is a P-channel MOSFET in a DFN8(3x3) package. While not necessarily pin-to-pin identical, it serves as a functional alternative in similar applications. The key differences are in electrical performance: VBQF2625 offers a significantly lower on-resistance of 28.8mΩ at 4.5V and a much higher continuous current rating of -36A, while maintaining the same -60V drain-source voltage rating. This represents a substantial improvement in conduction loss and current-handling capability.
Key Application Areas:
Original Model SI7415DN-T1-GE3: Suitable for -60V systems requiring moderate current switching, such as power management in industrial controls, telecom auxiliary power, or high-side load switches.
Alternative Model VBQF2625: Ideal for upgrading designs where lower conduction loss and higher current capacity are needed within the same voltage class. Applications include more efficient high-side switches, power path management, and compact DC-DC converters in -48V to -60V systems.
Comparative Analysis: SIRA96DP-T1-GE3 (N-channel) vs. VBQA1308
This comparison focuses on N-channel MOSFETs for low-side switching and power conversion, where low on-resistance is paramount.
Analysis of the Original Model (SIRA96DP-T1-GE3) Core:
This Vishay 30V N-channel MOSFET in a PowerPAK-SO-8 package is designed for high-current, low-voltage applications. Its core strengths are a low RDS(on) of 8.8mΩ at 10V and a continuous drain current of 16A, offering a good balance of performance and package familiarity.
Compatibility and Differences of the Domestic Alternative (VBQA1308):
VBsemi's VBQA1308, in a DFN8(5x6) package, is a performance-enhanced alternative. It matches the 30V voltage rating but dramatically improves key parameters: RDS(on) is reduced to 7mΩ at 10V, and the continuous current rating is increased to 80A. This translates to significantly lower power dissipation and higher power density potential.
Key Application Areas:
Original Model SIRA96DP-T1-GE3: A reliable choice for applications like synchronous rectification in 12V/24V DC-DC converters, motor drives for small pumps or fans, and load switches in computing or automotive systems where 16A current is sufficient.
Alternative Model VBQA1308: Suited for demanding applications requiring maximum efficiency and high current. Ideal for high-current point-of-load (POL) converters, server VRMs, high-power motor drives, and battery protection circuits where minimal voltage drop and high thermal performance are critical.
Conclusion:
This analysis reveals clear selection paths based on performance needs:
For P-channel applications around -60V, the original SI7415DN-T1-GE3 provides a proven solution. Its domestic alternative, VBQF2625, offers a major performance leap with much lower RDS(on) and higher current, making it excellent for efficiency-focused upgrades.
For 30V N-channel applications, the SIRA96DP-T1-GE3 is a solid performer. The alternative VBQA1308 stands out as a superior choice for next-generation designs, delivering exceptionally low resistance and very high current capability for top-tier power efficiency.
The core takeaway is precise requirement matching. Domestic alternatives like VBQF2625 and VBQA1308 not only provide supply chain options but also offer significant performance advantages, giving engineers powerful tools for optimizing efficiency, power density, and cost in their designs.