MOSFET Selection for Medium-Voltage Switching and Signal-Level Applications: FQP
In power design, balancing voltage capability, switching efficiency, and cost is a constant challenge. This article takes two classic MOSFETs from onsemi—the medium-voltage FQPF9N25CT and the small-signal 2N7002LT1G—as benchmarks. We will analyze their design focus and typical applications, then evaluate the domestic alternative solutions VBMB1252M and VB162K from VBsemi. By comparing their parameter differences and performance orientations, we provide a clear selection guide to help you find the most suitable power switch for your next project.
Comparative Analysis: FQPF9N25CT (N-channel) vs. VBMB1252M
Analysis of the Original Model (FQPF9N25CT) Core:
This is a 250V N-channel MOSFET from onsemi in a TO-220F-3 package. Its design core is to provide robust switching capability for medium-voltage applications. Key advantages include a high drain-source voltage (Vdss) of 250V and a continuous drain current (Id) of 8.8A. Its on-resistance is 430mΩ @10V, 4.4A, offering a reliable solution for off-line power supplies and motor drives.
Compatibility and Differences of the Domestic Alternative (VBMB1252M):
VBsemi's VBMB1252M is a direct pin-to-pin compatible alternative in the same TO220F package. The main differences are in electrical parameters: VBMB1252M features a significantly lower on-resistance of 200mΩ @10V and a higher continuous current rating of 16A at the same 250V voltage rating. This represents a substantial performance upgrade in conduction losses and current handling.
Key Application Areas:
Original Model FQPF9N25CT: Well-suited for medium-power, medium-voltage switching where cost and reliability are balanced. Typical applications include:
Switching power supplies (e.g., AC-DC converters).
Motor drives and inverters.
Inductive load switching.
Alternative Model VBMB1252M: Ideal for upgraded scenarios demanding lower conduction loss and higher current capacity within the same voltage class. Suitable for:
Higher-efficiency or higher-power versions of the above applications.
Designs where thermal performance needs improvement.
Comparative Analysis: 2N7002LT1G (N-channel) vs. VB162K
This comparison shifts to low-voltage, small-signal switching. The design focus here is on compact size and basic switching functionality for control circuits.
Analysis of the Original Model (2N7002LT1G) Core:
This is a 60V N-channel MOSFET from onsemi in a tiny SOT-23 package. Its core advantage is its minimal footprint for signal-level switching. It features a Vdss of 60V, a continuous current of 115mA, and an on-resistance of 7.5Ω @10V. It is designed for low-power interfacing and load switching.
Compatibility and Differences of the Domestic Alternative (VB162K):
VBsemi's VB162K is a pin-to-pin compatible alternative in the SOT23-3 package. Key parameter differences: VB162K offers a similar Vdss of 60V but provides a higher continuous current rating of 0.3A (300mA). Its on-resistance is specified as 2800mΩ (2.8Ω) @10V, which is significantly lower than the original's 7.5Ω, indicating better conduction performance for small loads.
Key Application Areas:
Original Model 2N7002LT1G: Perfect for space-constrained, very low-current switching tasks. Typical applications include:
Signal level shifting and isolation.
Driving small relays, LEDs, or other light loads.
Interface protection and load switching in microcontroller circuits.
Alternative Model VB162K: Better suited for applications requiring slightly higher current handling (up to 300mA) and improved conduction characteristics within the same compact form factor. Suitable for:
Upgrading existing designs for margin or efficiency.
New designs where lower RDS(on) is beneficial for the target load.
Conclusion:
This analysis reveals two distinct substitution strategies:
For medium-voltage, medium-power switching (FQPF9N25CT), the domestic alternative VBMB1252M offers a compelling performance-enhanced option with significantly lower on-resistance and higher current capability, enabling more efficient or powerful designs.
For low-voltage, signal-level switching (2N7002LT1G), the domestic alternative VB162K provides a compatible upgrade with better current handling and lower on-resistance, suitable for designs needing more drive strength within the same tiny footprint.
The core takeaway remains: selection is about precise requirement matching. These domestic alternatives not only offer supply chain resilience but also present opportunities for performance improvement or cost optimization, giving engineers greater flexibility in their design choices.